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    Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
    1.
    发明授权
    Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning 失效
    通过晶片接合和化学稀化制造绝缘体薄硅层的方法

    公开(公告)号：US5024723A

    公开(公告)日：1991-06-18

    申请号：US519941

    申请日：1990-05-07

    申请人： Ulrich M. Goesele ,  Volker E. Lehmann

    发明人： Ulrich M. Goesele ,  Volker E. Lehmann

    IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/306

    CPC分类号： H01L21/2007 ,  H01L21/26513 ,  H01L21/30608 ,  H01L21/30625 ,  Y10S438/97

    摘要： A method for forming a thin crystal layer of silicon on top of a insulating layer that is supported by a silicon wafer used for electronic device applications. Carbon ions are implanted in a silicon wafer in order to form an etch stop. Said wafer is bonded to a supporting wafer that has an insulating surface layer of silicon oxide or silicon nitride. The silicon substrate of the implanted wafer is removed using an alkaline etching solution or grinding and alkaline etching. The remaining carbon implanted layer forms the thin silicon layer.

    摘要翻译： 一种用于在由用于电子器件应用的硅晶片支撑的绝缘层的顶部上形成硅的薄晶体层的方法。 将碳离子注入硅晶片中以形成蚀刻停止。 所述晶片结合到具有氧化硅或氮化硅的绝缘表面层的支撑晶片。 使用碱性蚀刻溶液或研磨和碱性蚀刻去除植入晶片的硅衬底。 剩余的碳注入层形成薄硅层。

    Microporous crystalline silicon of increased band-gap for semiconductor applications
    2.
    发明授权
    Microporous crystalline silicon of increased band-gap for semiconductor applications 失效
    用于半导体应用的带隙增加的微孔晶体硅

    公开(公告)号：US5206523A

    公开(公告)日：1993-04-27

    申请号：US751800

    申请日：1991-08-29

    申请人： Ulrich M. Goesele ,  Volker E. Lehmann

    发明人： Ulrich M. Goesele ,  Volker E. Lehmann

    IPC分类号： H01L21/3063 ,  H01L29/12 ,  H01L29/16 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/078

    CPC分类号： B82Y10/00 ,  H01L21/3063 ,  H01L29/125 ,  H01L29/16 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/078 ,  Y02E10/547

    摘要： A process is disclosed for producing microporous crystalline silicon which has a band-gap substantially increased relative to that of normal crystalline silicon. This process involves the preparation of quantum wires of silicon by means of a chemical attack method carried out on silicon that has been doped such that it conducts electricity substantially via the effective transport of electric charge by means of so-called holes. The microporous crystalline silicon thus produced is in the form of a discrete mass having a bulk-like, interconnected crystalline silicon structure of quantum wires whose band-gap is greater than normal crystalline silicon. Because of this increased band-gap this microporous crystalline silicon may be used as an active element in applications such as tandem solar cells.

    摘要翻译： 公开了一种生产微孔晶体硅的方法，其具有相对于正常结晶硅的带隙基本增加的带隙。 该方法涉及通过在硅上进行的化学侵蚀方法来制备硅的量子线，该方法已被掺杂，使得其通过所谓的孔通过有效的电荷传输基本上传导电力。 由此产生的微孔结晶硅是离散质量的形式，其具有带隙大于正常结晶硅的量子线的块状互连晶体硅结构。 由于这种增加的带隙，该微孔结晶硅可以用作诸如串联太阳能电池的应用中的有源元件。