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    Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
    2.
    发明授权
    Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning 失效
    通过晶片接合和化学稀化制造绝缘体薄硅层的方法

    公开(公告)号：US5024723A

    公开(公告)日：1991-06-18

    申请号：US519941

    申请日：1990-05-07

    申请人： Ulrich M. Goesele ,  Volker E. Lehmann

    发明人： Ulrich M. Goesele ,  Volker E. Lehmann

    IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/306

    CPC分类号： H01L21/2007 ,  H01L21/26513 ,  H01L21/30608 ,  H01L21/30625 ,  Y10S438/97

    摘要： A method for forming a thin crystal layer of silicon on top of a insulating layer that is supported by a silicon wafer used for electronic device applications. Carbon ions are implanted in a silicon wafer in order to form an etch stop. Said wafer is bonded to a supporting wafer that has an insulating surface layer of silicon oxide or silicon nitride. The silicon substrate of the implanted wafer is removed using an alkaline etching solution or grinding and alkaline etching. The remaining carbon implanted layer forms the thin silicon layer.

    摘要翻译： 一种用于在由用于电子器件应用的硅晶片支撑的绝缘层的顶部上形成硅的薄晶体层的方法。 将碳离子注入硅晶片中以形成蚀刻停止。 所述晶片结合到具有氧化硅或氮化硅的绝缘表面层的支撑晶片。 使用碱性蚀刻溶液或研磨和碱性蚀刻去除植入晶片的硅衬底。 剩余的碳注入层形成薄硅层。

    Method for the transfer of thin layers of monocrystalline material to a desirable substrate
    3.
    发明授权
    Method for the transfer of thin layers of monocrystalline material to a desirable substrate 失效
    用于将薄层单晶材料转移到所需衬底的方法

    公开(公告)号：US5877070A

    公开(公告)日：1999-03-02

    申请号：US866951

    申请日：1997-05-31

    申请人： Ulrich M. Goesele ,  Q.-Y. Tong

    发明人： Ulrich M. Goesele ,  Q.-Y. Tong

    IPC分类号： H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/76251 ,  H01L21/76254 ,  Y10S117/915

    摘要： A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, which may have a substantially different coefficient of thermal expansion than the first substrate is realized by producing hydrogen-traps in the first substrate by a first implantation and then implanting hydrogen followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, growth and overlapping of hydrogen filled microcracks. In the case of substrates with different thermal expansion coefficients the heat-treatment for splitting must be and can be at a temperature lower than a critical temperature at which the bonded pair degrades due to the mechanical stresses caused by the different expansion coefficients of the bonded-pair structure. In an alternate approach only hydrogen implantation, wafer bonding and splitting steps are used under the additional condition that the hydrogen implantation temperature of must be higher than the temperature at which the transfer of the layer is accomplished.

    摘要翻译： 通过第一次注入通过在第一衬底中产生氢阱来实现将单晶薄层从第一单晶衬底转移到第二衬底上的方法，该第二衬底可具有基本上不同于第一衬底的热膨胀系数 注入氢气然后进行热处理以削弱注入层和第一衬底的其余部分之间的连接，然后在注入的第一衬底和第二衬底之间形成牢固的结合，最后使用另一种热处理来分裂 通过形成，生长和重叠填充氢的微裂纹，第一衬底的其余部分的单晶薄层。 在具有不同热膨胀系数的基板的情况下，用于分裂的热处理必须并且可以处于低于粘结对由于由粘结 - 粘合剂的不同膨胀系数引起的机械应力而降解的临界温度的温度， 配对结构。 在替代方法中，仅在氢注入温度必须高于完成层的转移温度的附加条件下使用氢注入，晶片结合和分离步骤。

    Method for the transfer of thin layers monocrystalline material onto a desirable substrate
    4.
    发明授权
    Method for the transfer of thin layers monocrystalline material onto a desirable substrate 有权
    将薄层单晶材料转移到所需衬底上的方法

    公开(公告)号：US6150239A

    公开(公告)日：2000-11-21

    申请号：US163897

    申请日：1998-09-30

    申请人： Ulrich M. Goesele ,  Qin-Yi Tong

    发明人： Ulrich M. Goesele ,  Qin-Yi Tong

    IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12 ,  H01L21/304

    CPC分类号： H01L21/76251 ,  H01L21/76254 ,  Y10S117/915

    摘要： A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-trap inducing ions with hydrogen ions, by the high temperature implantation of hydrogen, and by their combination, followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, and growth of hydrogen filled microcracks.

    摘要翻译： 通过将氢诱捕离子与氢离子共注入，通过与氢离子共注入来实现将单晶薄层从第一单晶衬底转移到第二衬底上的方法，其中相对于层分裂所需的氢剂量的要求降低 氢的高温注入，并通过它们的组合，随后进行热处理以削弱注入层与第一衬底的其余部分之间的连接，然后在注入的第一衬底和第二衬底之间形成牢固的结合，最后 使用另一种热处理，以便通过形成将单晶薄层与第一衬底的其余部分分离，以及填充氢的微裂纹的生长。

    Microporous crystalline silicon of increased band-gap for semiconductor applications
    5.
    发明授权
    Microporous crystalline silicon of increased band-gap for semiconductor applications 失效
    用于半导体应用的带隙增加的微孔晶体硅

    公开(公告)号：US5206523A

    公开(公告)日：1993-04-27

    申请号：US751800

    申请日：1991-08-29

    申请人： Ulrich M. Goesele ,  Volker E. Lehmann

    发明人： Ulrich M. Goesele ,  Volker E. Lehmann

    IPC分类号： H01L21/3063 ,  H01L29/12 ,  H01L29/16 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/078

    CPC分类号： B82Y10/00 ,  H01L21/3063 ,  H01L29/125 ,  H01L29/16 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/078 ,  Y02E10/547

    摘要： A process is disclosed for producing microporous crystalline silicon which has a band-gap substantially increased relative to that of normal crystalline silicon. This process involves the preparation of quantum wires of silicon by means of a chemical attack method carried out on silicon that has been doped such that it conducts electricity substantially via the effective transport of electric charge by means of so-called holes. The microporous crystalline silicon thus produced is in the form of a discrete mass having a bulk-like, interconnected crystalline silicon structure of quantum wires whose band-gap is greater than normal crystalline silicon. Because of this increased band-gap this microporous crystalline silicon may be used as an active element in applications such as tandem solar cells.

    摘要翻译： 公开了一种生产微孔晶体硅的方法，其具有相对于正常结晶硅的带隙基本增加的带隙。 该方法涉及通过在硅上进行的化学侵蚀方法来制备硅的量子线，该方法已被掺杂，使得其通过所谓的孔通过有效的电荷传输基本上传导电力。 由此产生的微孔结晶硅是离散质量的形式，其具有带隙大于正常结晶硅的量子线的块状互连晶体硅结构。 由于这种增加的带隙，该微孔结晶硅可以用作诸如串联太阳能电池的应用中的有源元件。