HIGH-POWER PULSE MAGNETRON SPUTTERING APPARATUS AND SURFACE TREATMENT APPARATUS USING THE SAME
    1.
    发明申请
    HIGH-POWER PULSE MAGNETRON SPUTTERING APPARATUS AND SURFACE TREATMENT APPARATUS USING THE SAME 审中-公开
    高功率脉冲磁控溅射装置及其表面处理装置

    公开(公告)号:US20110011737A1

    公开(公告)日:2011-01-20

    申请号:US12505042

    申请日:2009-07-17

    IPC分类号: C23C14/35

    摘要: A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece.

    摘要翻译: 提供了适用于在工件上涂覆的磁控溅射装置。 磁控溅射装置包括真空室,保持器,磁控管等离子体源和大功率脉冲电源组,其中磁控管等离子体源包括基极,磁控管控制器和靶。 反应气体被输入到真空室中,并且支撑工件的支架设置在真空室内。 磁控管等离子体源与工件相对设置,其中磁控管控制器设置在基座中,并且目标件设置在基座上。 大功率脉冲电源组耦合到真空室,磁控管等离子体源和保持器,并且高压脉冲功率被输入到磁控管等离子体源以产生等离子体以在工件的表面上涂覆膜。