Method for Pulsed plasma deposition of titanium dioxide film
    1.
    发明申请
    Method for Pulsed plasma deposition of titanium dioxide film 审中-公开
    脉冲等离子体沉积二氧化钛膜的方法

    公开(公告)号:US20100075510A1

    公开(公告)日:2010-03-25

    申请号:US12237902

    申请日:2008-09-25

    IPC分类号: H01L21/31

    摘要: A method for pulsed plasma deposition of titanium dioxide film is revealed. The method includes the steps of: (1) set a substrate into a chamber and the chamber is pumped down to a certain vacuum level. (2) Introduce titanium tetraisopropoxide gas and gas containing oxygen into the chamber and a RF (radio frequency) pulse power supply is turned on to create a glow discharge for generating pulsed plasma. (3) A layer of titanium dioxide film is deposited on the substrate by the pulsed plasma. The TiO2 film is deposited on a substrate such as plastic substrate at low temperature according to the method so that the heat-resistant and conductive requirements of conventional substrates are removed.

    摘要翻译: 揭示了二氧化钛膜脉冲等离子体沉积的方法。 该方法包括以下步骤:(1)将衬底设置到腔室中,并将腔室泵送到一定的真空度。 (2)将四异丙醇钛气体和含氧气体引入室内,接通RF(射频)脉冲电源,产生用于产生脉冲等离子体的辉光放电。 (3)通过脉冲等离子体在基板上沉积一层二氧化钛膜。 根据该方法,TiO 2膜在低温下沉积在诸如塑料基板的基板上,从而去除常规基板的耐热和导电要求。

    Protective coating method of pervoskite structure for SOFC interconnection
    2.
    发明申请
    Protective coating method of pervoskite structure for SOFC interconnection 审中-公开
    用于SOFC互连的渗碳体结构的保护涂层方法

    公开(公告)号:US20080047826A1

    公开(公告)日:2008-02-28

    申请号:US11508236

    申请日:2006-08-23

    IPC分类号: C23C14/00

    摘要: A protective coating is formed on a stainless interconnecting plate used in solid oxide fuel cell (SOFC). With the protective coating, a contact resistance of the plate is effectively lowered. Anode and cathode of SOFC are also prevented from being poisoned by chromium diffusion from the plate. Therefore, after a long time of use under a high temperature, a degradation rate for power generating of SOFC is reduced; and, thus, a working hour is prolonged. Hence, the SOFC can be mass-produced and large-scaled.

    摘要翻译: 在固体氧化物燃料电池(SOFC)中使用的不锈钢互连板上形成保护涂层。 通过保护涂层,板的接触电阻被有效地降低。 还防止了SOFC的阳极和阴极被来自板的铬扩散而中毒。 因此,在高温下长时间使用后,SOFC发电的降解率降低; 因此,工作时间延长。 因此,SOFC可以批量生产和大规模生产。

    PACKAGING STRUCTURE AND METHOD FOR OLED
    4.
    发明申请
    PACKAGING STRUCTURE AND METHOD FOR OLED 失效
    OLED的包装结构和方法

    公开(公告)号:US20120098022A1

    公开(公告)日:2012-04-26

    申请号:US13239581

    申请日:2011-09-22

    IPC分类号: H01L51/52

    CPC分类号: H01L51/5253

    摘要: The present invention discloses a packaging structure and method for organic light emitting devices, in which the packaging structure comprises a substrate; an OLED device, which disposing on the substrate; a first transparent protection layer, which forming on the OLED device; and a second transparent protection layer, which forming on the first transparent protection layer.

    摘要翻译: 本发明公开了一种用于有机发光器件的封装结构和方法,其中所述封装结构包括衬底; 设置在基板上的OLED器件; 第一透明保护层,其在OLED器件上形成; 以及形成在第一透明保护层上的第二透明保护层。

    SOLAR CELL HAVING IMPROVED LIGHT-TRAPPING STRUCTURE
    5.
    发明申请
    SOLAR CELL HAVING IMPROVED LIGHT-TRAPPING STRUCTURE 审中-公开
    具有改进的光束结构的太阳能电池

    公开(公告)号:US20110308594A1

    公开(公告)日:2011-12-22

    申请号:US12905737

    申请日:2010-10-15

    IPC分类号: H01L31/0232

    CPC分类号: H01L31/02168 Y02E10/52

    摘要: The present invention provides a solar cell, which has an improved light-trapping structure, wherein the light trapping structure is a single layer of thin film made of a plurality of zinc oxide microballs whose diameter is ranged between 300 nm and 650 nm. In a preferred embodiment, the light trapping layer, being configured with a plurality of microballs made of zinc oxide, is disposed at a position between the front surface of a photovoltaic conversion layer and a front electrode of the solar cell. Since the light-trapping structure is formed directly from the ZnO transparent conductive layer of the solar cell, the types of materials used for constructing the solar cell are reduced.

    摘要翻译: 本发明提供了一种具有改进的捕光结构的太阳能电池,其中所述光俘获结构是由直径在300nm和650nm之间的多个氧化锌微球制成的单层薄膜。 在优选实施例中,配置有由氧化锌制成的多个微球的光捕获层设置在光伏转换层的前表面和太阳能电池的前电极之间的位置。 由于光捕获结构直接由太阳能电池的ZnO透明导电层形成,所以用于构造太阳能电池的材料的种类减少。

    Packaging structure and method for OLED
    6.
    发明授权
    Packaging structure and method for OLED 失效
    OLED的包装结构和方法

    公开(公告)号:US08680516B2

    公开(公告)日:2014-03-25

    申请号:US13239581

    申请日:2011-09-22

    IPC分类号: H01L51/00

    CPC分类号: H01L51/5253

    摘要: The present invention discloses a packaging structure and method for organic light emitting devices, in which the packaging structure comprises a substrate; an OLED device, which disposing on the substrate; a first transparent protection layer, which forming on the OLED device; and a second transparent protection layer, which forming on the first transparent protection layer.

    摘要翻译: 本发明公开了一种用于有机发光器件的封装结构和方法,其中所述封装结构包括衬底; 设置在基板上的OLED器件; 第一透明保护层,其在OLED器件上形成; 以及形成在第一透明保护层上的第二透明保护层。

    Thin-Film Photovoltaic Device and Method for Manufacturing the Same
    7.
    发明申请
    Thin-Film Photovoltaic Device and Method for Manufacturing the Same 审中-公开
    薄膜光伏器件及其制造方法

    公开(公告)号:US20110088766A1

    公开(公告)日:2011-04-21

    申请号:US12726930

    申请日:2010-03-18

    IPC分类号: H01L31/0224 H01L31/18

    摘要: A thin-film photovoltaic device comprising at least: a substrate, a transparent electrode layer, a p-type semiconductor as the ohmic contact layer, an intrinsic semiconductor as the light absorption layer, and a magnesium alloy substituted for the n-type semiconductor as the other ohmic contact layer. A method for manufacturing the thin-film photovoltaic device is also provided in the present invention.

    摘要翻译: 一种薄膜光伏器件,至少包括:基板,透明电极层,作为欧姆接触层的p型半导体,作为光吸收层的本征半导体,以及代替n型半导体的镁合金 另一个欧姆接触层。 本发明还提供了薄膜光伏器件的制造方法。

    PLASMA SOURCE
    8.
    发明申请
    PLASMA SOURCE 审中-公开
    等离子体源

    公开(公告)号:US20110041766A1

    公开(公告)日:2011-02-24

    申请号:US12732753

    申请日:2010-03-26

    IPC分类号: C23C16/513

    摘要: A plasma source comprises a vacuum chamber, a plurality of discharge tubes, a plurality of permanent magnets, a plurality of RF antennas, and an RF power distribution circuit. The RF power distribution circuit is electrically coupled to an RF power supply and each of the plurality of RF antennas. The lengths of the transmission paths between each of the plurality of RF antennas and the RF power supply are the same, so that the RF power supply can provide each of discharge tubes with the same RF power.

    摘要翻译: 等离子体源包括真空室,多个放电管,多个永磁体,多个RF天线和RF功率分配电路。 RF功率分配电路电耦合到RF电源和多个RF天线中的每一个。 多个RF天线中的每一个和RF电源之间的传输路径的长度相同,使得RF电源可以为每个放电管提供相同的RF功率。

    Method for fabricating a thin film formed with a uniform single-size monolayer of spherical AZO nanoparticles
    9.
    发明授权
    Method for fabricating a thin film formed with a uniform single-size monolayer of spherical AZO nanoparticles 有权
    用均匀的单尺寸单球形AZO纳米颗粒制成薄膜的方法

    公开(公告)号:US08497199B1

    公开(公告)日:2013-07-30

    申请号:US13569371

    申请日:2012-08-08

    IPC分类号: H01L21/44

    摘要: The present invention relates to a method for fabricating a thin film formed with a uniform single-size monolayer of spherical AZO nanoparticles. Because of its own advantages in cost and transparency, Al-doped ZnO (AZO) transparent conductive film is becoming the most commonly used transparent conducting oxide (TCO) replacement for solar cells. In this invention, a colloidal chemical means is adopted for enabling a chemical reaction between metal salts, water, and polyhydric alcohols at a room-temperature environment, and thereby, a process for fabricating spherical AZO nanoparticles in a diameter ranged between 100 nm to 400 nm according to different parameter configurations can be achieved while controlling the actual Al/Zn ratio to be ranged between 0.1% to 3%. In addition, a dip coating means is adopted for densely distributing the spherical AZO nanoparticles on a substrate into a monolayer close-packed structure.

    摘要翻译: 本发明涉及一种用均匀的单尺寸单球形AZO纳米颗粒制成薄膜的方法。 由于其自身的成本和透明度优势,Al掺杂的ZnO(AZO)透明导电膜正在成为太阳能电池最常用的透明导电氧化物(TCO)替代品。 在本发明中,采用胶体化学方法,可在室温环境下使金属盐,水和多元醇发生化学反应,从而制备直径范围为100nm至400nm的球形AZO纳米颗粒的方法 可以实现不同参数配置,同时控制实际的Al / Zn比在0.1%到3%之间。 此外,采用浸涂装置将底物上的球形AZO纳米颗粒密集分布成单层密堆积结构。

    Apparatus and Method for Growing a Microcrystalline Silicon Film
    10.
    发明申请
    Apparatus and Method for Growing a Microcrystalline Silicon Film 审中-公开
    用于生长微晶硅膜的装置和方法

    公开(公告)号:US20110014782A1

    公开(公告)日:2011-01-20

    申请号:US12390433

    申请日:2009-02-21

    IPC分类号: H01L21/20

    摘要: Disclosed is a method for growing a microcrystalline silicon film on a substrate. The method includes the step of disposing the substrate in a chamber, the step of vacuuming the chamber and heating the substrate, the step of introducing reacting gas into the chamber as a precursor and keeping the pressure in the chamber at a predetermined value and the step of using RF energy in the chamber to dissociate the reacting gas to form plasma for growing the microcrystalline silicon film on the substrate. The reacting gas includes SiH4/Ar mixture and H2. The ratio of SiH4/Ar mixture over H2 is 1:1 to 1:20.

    摘要翻译: 公开了一种在基板上生长微晶硅膜的方法。 该方法包括将基板设置在室中的步骤,对室进行抽真空和加热基板的步骤,将反应气体引入室内作为前体并将室内的压力保持在预定值的步骤, 在室中使用RF能量以解离反应气体以形成用于在衬底上生长微晶硅膜的等离子体。 反应气体包括SiH 4 / Ar混合物和H 2。 SiH4 / Ar混合物比H2的比例为1:1至1:20。