Capacitance pressure sensor
    2.
    发明授权
    Capacitance pressure sensor 有权
    电容式压力传感器

    公开(公告)号:US6012336A

    公开(公告)日:2000-01-11

    申请号:US206693

    申请日:1998-12-07

    摘要: A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

    摘要翻译: 公开了一种与公共衬底上的电子电路集成的微机电(MEM)电容压力传感器和用于形成这种器件的方法。 MEM电容压力传感器包括至少部分地形成在蚀刻在硅衬底的表面下方的空腔中的电容压力传感器和形成在衬底上的相邻电路(CMOS,BiCMOS或双极电路)。 通过在空腔中形成电容压力传感器,衬底可以被平坦化(例如通过化学机械抛光),使得可以使用标准的集成电路处理步骤来形成电子电路(例如使用铝或铝合金 互连金属化)。