Method for Fabricating a Structure for a Semiconductor Component, and Semiconductor Component
    1.
    发明申请
    Method for Fabricating a Structure for a Semiconductor Component, and Semiconductor Component 审中-公开
    制造半导体元件结构的方法和半导体元件

    公开(公告)号:US20080085606A1

    公开(公告)日:2008-04-10

    申请号:US11867724

    申请日:2007-10-05

    IPC分类号: H01L21/461

    CPC分类号: H01L21/76816 H01L21/31144

    摘要: In one aspect, the invention provides a fabrication method. Before the fabrication of the structure, a mask layer, for example a hard mask, is applied to a layer. The mask layer has at least two layers composed of materials that can be etched selectively with respect to one another. In a first etching process, the structure is introduced into the layer. Subsequently, the first etching process is interrupted at a point in time in order to etch away a topmost layer of the hard mask selectively with respect to the underlying layer by means of a second etching process and, subsequently, the first etching process is continued for fabricating the structure with the new topmost layer.

    摘要翻译: 一方面,本发明提供一种制造方法。 在制造结构之前,将掩模层(例如硬掩模)施加到层上。 掩模层具有由能够相对于彼此选择性地蚀刻的材料组成的至少两层。 在第一蚀刻工艺中,将结构引入层中。 随后,第一蚀刻工艺在某个时间点被中断,以便通过第二蚀刻工艺相对于下面的层选择性蚀刻掉硬掩模的最上层,并且随后继续进行第一蚀刻工艺 用新的最上层制造结构。

    Compensation frame for receiving a substrate
    3.
    发明申请
    Compensation frame for receiving a substrate 审中-公开
    用于接收基板的补偿框架

    公开(公告)号:US20050016468A1

    公开(公告)日:2005-01-27

    申请号:US10742763

    申请日:2003-12-23

    摘要: An inner contour of the compensation frame (2) is configured in polygonal fashion in order to receive the substrate (1). With the substrate (1) having been received, the compensation frame (2) encloses the substrate (1) at the outer edge thereof. A partial region (3a) of an upper main area (3) of the compensation frame (2) runs at a given height (h) above the plane of an upper main area (1a) of the substrate (1) when the latter has been received into the compensation frame (2). Moreover, a further partial region (3b) of the upper main area (3) of the compensation frame runs essentially at the same height as the plane of the upper main area (3) of the substrate (1) when the latter has been received into the compensation frame (2).

    摘要翻译: 补偿框架(2)的内部轮廓被配置为多边形,以便接收基板(1)。 在已经接收到基板(1)的情况下,补偿框架(2)在其外边缘处包围基板(1)。 补偿框架(2)的上部主区域(3)的局部区域(3a)在衬底(1)的上部主区域(1a)的平面上方的给定高度(h)处延伸, 被收到补偿框架(2)。 此外,补偿框架的上主区域(3)的另一部分区域(3b)基本上在与基板(1)的上主区域(3)的平面相同的高度运行,当接收器 进入补偿框架(2)。