Photodetector and manufacturing method thereof
    1.
    发明授权
    Photodetector and manufacturing method thereof 有权
    光电检测器及其制造方法

    公开(公告)号:US08022494B2

    公开(公告)日:2011-09-20

    申请号:US11700043

    申请日:2007-01-31

    IPC分类号: H01L31/075 H01L31/07

    摘要: A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.

    摘要翻译: 具有改善的响应速度的横向光电二极管包括具有有源区的半导体衬底以及平行于衬底的表面布置的p型区和n型区。 有源区分别是n层和p层,并且在衬底的厚度方向上层叠以形成p-n结。 此外,用于防止载体从衬底向有源区移动的阻挡层设置在有源区的一侧朝向衬底。

    Photodetector and manufacturing method thereof
    2.
    发明申请
    Photodetector and manufacturing method thereof 有权
    光电检测器及其制造方法

    公开(公告)号:US20080179700A1

    公开(公告)日:2008-07-31

    申请号:US11700043

    申请日:2007-01-31

    IPC分类号: H01L31/0352 H01L31/18

    摘要: A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.

    摘要翻译: 具有改善的响应速度的横向光电二极管包括具有有源区的半导体衬底以及平行于衬底的表面布置的p型区和n型区。 有源区分别是n层和p层,并且在衬底的厚度方向上层叠以形成p-n结。 此外,用于防止载体从衬底向有源区移动的阻挡层设置在有源区的一侧朝向衬底。

    Photodiode
    3.
    发明授权
    Photodiode 有权
    光电二极管

    公开(公告)号:US07723206B2

    公开(公告)日:2010-05-25

    申请号:US11950700

    申请日:2007-12-05

    IPC分类号: H01L29/00 H01S3/10

    摘要: A photodiode in which increased sensitivity and speed are balanced. The photodiode includes: a semiconductor substrate; a plurality of active regions formed on the substrate by selective epitaxial growth; and a comb electrode provided for each of the plurality of active regions and in communication with each other to electrically connect the active regions together.

    摘要翻译: 光敏二极管的灵敏度和速度均衡。 光电二极管包括:半导体衬底; 通过选择性外延生长在衬底上形成的多个有源区; 以及为多个有源区域中的每一个设置并彼此连通以将活性区域电连接在一起的梳状电极。

    PHOTODIODE
    5.
    发明申请
    PHOTODIODE 有权
    光电

    公开(公告)号:US20090146239A1

    公开(公告)日:2009-06-11

    申请号:US11950795

    申请日:2007-12-05

    IPC分类号: H01L23/482 H01L21/00

    摘要: A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.

    摘要翻译: 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底,形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指,并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里,不透明电极的宽度被设定为小于透明电极的宽度。

    PHOTODIODE
    6.
    发明申请
    PHOTODIODE 有权
    光电

    公开(公告)号:US20090146178A1

    公开(公告)日:2009-06-11

    申请号:US11950700

    申请日:2007-12-05

    IPC分类号: H01L31/0224

    摘要: A photodiode in which increased sensitivity and speed are balanced. The photodiode includes: a semiconductor substrate; a plurality of active regions formed on the substrate by selective epitaxial growth; and a comb electrode provided for each of the plurality of active regions and in communication with each other to electrically connect the active regions together.

    摘要翻译: 光敏二极管的灵敏度和速度均衡。 光电二极管包括:半导体衬底; 通过选择性外延生长在衬底上形成的多个有源区; 以及为多个有源区域中的每一个设置并彼此连通以将活性区域电连接在一起的梳状电极。

    Photodiode
    8.
    发明授权
    Photodiode 有权
    光电二极管

    公开(公告)号:US07659627B2

    公开(公告)日:2010-02-09

    申请号:US11950795

    申请日:2007-12-05

    IPC分类号: H01L29/41

    摘要: A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.

    摘要翻译: 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底,形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指,并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里,不透明电极的宽度被设定为小于透明电极的宽度。