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公开(公告)号：US07606499B2
公开(公告)日：2009-10-20
申请号：US11194343
申请日：2005-08-01
IPC分类号： H04B10/00
CPC分类号： H01S5/0262 , H01L25/167 , H01L2224/48091 , H01L2224/48137 , H01S5/02248 , H01S5/02284 , H01S5/0261 , H01S5/183 , H01S5/423 , H01L2924/00014
摘要： A bidirectional transceiver assembly includes a VCSEL structure that emits light at a defined wavelength on a substrate structure. A photodetector receives the light. A hole structure is formed on the substrate structure to allow the light from the VCSEL structure to be emitted so as to form an optical path.
摘要翻译： 双向收发器组件包括在衬底结构上以限定的波长发射光的VCSEL结构。 光电检测器接收光。 在衬底结构上形成孔结构以允许来自VCSEL结构的光被发射以形成光路。
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公开(公告)号：US20070274642A1
公开(公告)日：2007-11-29
申请号：US11730173
申请日：2007-03-29
申请人： Takayoshi Inujima , Mikihiko Kato , Satoshi Takahashi , Yukiya Miyachi , Lionel C. Kimerling , Jurgen Michel , Dong Pan , Wojciech P. Giziewicz
发明人： Takayoshi Inujima , Mikihiko Kato , Satoshi Takahashi , Yukiya Miyachi , Lionel C. Kimerling , Jurgen Michel , Dong Pan , Wojciech P. Giziewicz
IPC分类号： G02B6/36
CPC分类号： G02B6/4202 , G02B6/02033
摘要： A high-speed optical transmission system includes an optical fiber for transmitting light and an optical receiver for receiving light transmitted from the optical fiber. The optical fiber is a plastic optical fiber (POF), and the optical receiver has a lateral pin structure.
摘要翻译： 高速光传输系统包括用于发射光的光纤和用于接收从光纤传输的光的光接收器。 光纤是塑料光纤（POF），光接收器具有横向引脚结构。
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公开(公告)号：US08022494B2
公开(公告)日：2011-09-20
申请号：US11700043
申请日：2007-01-31
IPC分类号： H01L31/075 , H01L31/07
CPC分类号： H01L31/103 , H01L31/1085 , H01L31/109
摘要： A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.
摘要翻译： 具有改善的响应速度的横向光电二极管包括具有有源区的半导体衬底以及平行于衬底的表面布置的p型区和n型区。 有源区分别是n层和p层，并且在衬底的厚度方向上层叠以形成p-n结。 此外，用于防止载体从衬底向有源区移动的阻挡层设置在有源区的一侧朝向衬底。
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公开(公告)号：US20080179700A1
公开(公告)日：2008-07-31
申请号：US11700043
申请日：2007-01-31
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/103 , H01L31/1085 , H01L31/109
摘要： A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.
摘要翻译： 具有改善的响应速度的横向光电二极管包括具有有源区的半导体衬底以及平行于衬底的表面布置的p型区和n型区。 有源区分别是n层和p层，并且在衬底的厚度方向上层叠以形成p-n结。 此外，用于防止载体从衬底向有源区移动的阻挡层设置在有源区的一侧朝向衬底。
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公开(公告)号：US07723206B2
公开(公告)日：2010-05-25
申请号：US11950700
申请日：2007-12-05
CPC分类号： H01L31/022408 , H01L31/105 , H01L31/1085
摘要： A photodiode in which increased sensitivity and speed are balanced. The photodiode includes: a semiconductor substrate; a plurality of active regions formed on the substrate by selective epitaxial growth; and a comb electrode provided for each of the plurality of active regions and in communication with each other to electrically connect the active regions together.
摘要翻译： 光敏二极管的灵敏度和速度均衡。 光电二极管包括：半导体衬底; 通过选择性外延生长在衬底上形成的多个有源区; 以及为多个有源区域中的每一个设置并彼此连通以将活性区域电连接在一起的梳状电极。
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公开(公告)号：US07659627B2
公开(公告)日：2010-02-09
申请号：US11950795
申请日：2007-12-05
IPC分类号： H01L29/41
CPC分类号： H01L27/1446 , H01L31/022408 , H01L31/085
摘要： A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.
摘要翻译： 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底，形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指，并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里，不透明电极的宽度被设定为小于透明电极的宽度。
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7.发明授权High speed and low loss GeSi/Si electro-absorption light modulator and method of fabrication using selective growth 有权高速低损耗GeSi / Si电吸收光调制器和使用选择性增长的制造方法公开(公告)号：US08160404B2
公开(公告)日：2012-04-17
申请号：US11561474
申请日：2006-11-20
申请人： Dong Pan , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
发明人： Dong Pan , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
CPC分类号： G02F1/025 , G02B2006/12142 , G02F2001/0157 , G02F2201/04 , G02F2201/16 , G02F2202/105 , H01L27/1443 , H01L31/028 , H01L31/1055 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.
摘要翻译： 光电子器件包括接收输入光信号的输入波导结构。 GeSi / Si波导结构从输入波导接收输入光信号，并对输入光信号进行选择性光电子操作。 GeSi / Si波导结构输出与在输入光信号上执行的选择性光电子操作相关联的光或电输出信号。 输出波导结构接收来自GeSi / Si波导结构的输出光信号，并提供光输出信号用于进一步处理。
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公开(公告)号：US07480430B2
公开(公告)日：2009-01-20
申请号：US11349761
申请日：2006-02-08
IPC分类号： G02B6/26
CPC分类号： H01L29/768
摘要： An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.
摘要翻译： 光波导结构包括从光源接收光信号的通气区域。 在透气区域的表面上形成光子晶体包层区域。 光子晶体覆盖区域将光信号限制在通气区域内，并且沿着轴向传播光信号，同时确保光信号的接近完全传输。
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公开(公告)号：US07596158B2
公开(公告)日：2009-09-29
申请号：US11553141
申请日：2006-10-26
申请人： Jifeng Liu , Dong Pan , Lionel C. Kimerling , Jurgen Michel , Sajan Saini
发明人： Jifeng Liu , Dong Pan , Lionel C. Kimerling , Jurgen Michel , Sajan Saini
IPC分类号： H01S5/00
CPC分类号： H01S5/3223 , B82Y20/00 , H01S5/021 , H01S5/18369 , H01S5/3086 , H01S5/3215 , H01S5/3427
摘要： A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.
摘要翻译： 激光结构包括具有掺杂Ge的至少一个有源层，以便从Ge的直接带隙产生大约1550nm的光发射。 第一限制结构位于至少一个活性层的顶部区域上。 第二限制结构位于至少一个活性层的底部区域上。
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10.发明授权Method of fabricating Ge or SiGe/Si waveguide or photonic crystal structures by selective growth 有权通过选择性生长制造Ge或SiGe / Si波导或光子晶体结构的方法公开(公告)号：US07801406B2
公开(公告)日：2010-09-21
申请号：US11194805
申请日：2005-08-01
申请人： Dong Pan , Jifeng Liu , Jurgen Michel , John Yasaitis , Lionel C. Kimerling
发明人： Dong Pan , Jifeng Liu , Jurgen Michel , John Yasaitis , Lionel C. Kimerling
IPC分类号： G02B6/10
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/1223 , G02B6/131 , G02B6/136 , G02B2006/12169
摘要： A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.
摘要翻译： 提供了形成低损耗晶体质量波导的方法。 该方法包括提供衬底并在衬底上形成电介质层。 通过蚀刻介电层的一部分形成通道。 在限定通道的区域中执行Si Ge或SiGe层的选择性生长。 此外，该方法包括在限定的温度范围内对波导进行热退火。
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