公开(公告)号：US06074930A

公开(公告)日：2000-06-13

申请号：US154782

申请日：1998-09-17

Applicant: Kyung Hawn Cho ,  Han Seong Kim ,  Chan Sik Park ,  Won Soon Lee

Inventor： Kyung Hawn Cho ,  Han Seong Kim ,  Chan Sik Park ,  Won Soon Lee

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/318 ,  H01L21/76 ,  H01L21/762

CPC classification number: H01L21/76232

Abstract: A method for forming trench isolation in the silicon substrate is disclosed. This method allows for an improved bonding force between the sidewall silicon dioxide layer and the sidewall of the trench. After a trench is formed, sidewall silicon dioxide is grown on the sidewall of the trench by a first oxidation process. Then, PE-TEOS is deposited on the silicon substrate and the sidewall of the trench. The PE-TEOS layer around the entrance of the trench is then etched back using argon gas. The second oxidation process or the first annealing proceeds to enhance the bonding force between the sidewall silicon dioxide layer and the sidewall of the trench. After the second oxidation process or the annealing, the trench is filled with O.sub.3 -TEOS, and then PE-TEOS is deposited over the O.sub.3 -TEOS layer. Finally, the second annealing process follows.

Abstract translation: 公开了一种在硅衬底中形成沟槽隔离的方法。 该方法允许侧壁二氧化硅层和沟槽的侧壁之间的改善的结合力。 在形成沟槽之后，通过第一氧化工艺在沟槽的侧壁上生长侧壁二氧化硅。 然后，PE-TEOS沉积在硅衬底和沟槽的侧壁上。 然后使用氩气回蚀刻沟槽入口周围的PE-TEOS层。 第二氧化处理或第一退火进行以增强侧壁二氧化硅层与沟槽的侧壁之间的结合力。 在第二次氧化处理或退火之后，沟槽填充有O3-TEOS，然后在O3-TEOS层上沉积PE-TEOS。 最后，第二退火处理如下。

公开(公告)号：US20080038930A1

公开(公告)日：2008-02-14

申请号：US11808523

申请日：2007-06-11

Applicant: Jae-Kyung Park ,  Won-Soon Lee ,  Young-Kyou Park ,  No-Hyun Huh ,  Yong-Ho Park

Inventor： Jae-Kyung Park ,  Won-Soon Lee ,  Young-Kyou Park ,  No-Hyun Huh ,  Yong-Ho Park

IPC: H01L21/3065 ,  C23F1/00

CPC classification number: H01L21/31138 ,  H01J37/32192

Abstract: Example embodiments relate to a method and an apparatus of ashing an object. The method may include converting a first reaction fluid into plasma, reacting the plasma with a second reaction fluid to generate radicals, and ashing the object using the radicals and the plasma.

Abstract translation: 示例实施例涉及一种灰化对象的方法和装置。 该方法可以包括将第一反应流体转化成等离子体，使等离子体与第二反应流体反应以产生自由基，以及使用自由基和等离子体使物体灰化。

公开(公告)号：US20080054194A1

公开(公告)日：2008-03-06

申请号：US11845187

申请日：2007-08-27

Applicant: Il-Kyoung KIM ,  No-Hyun HUH ,  Tae-Won LEE ,  Sung-Wook PARK ,  Ki-Young YUN ,  Won-Soon LEE ,  Young-Ha YOON ,  Tae-Sub IM

Inventor： Il-Kyoung KIM ,  No-Hyun HUH ,  Tae-Won LEE ,  Sung-Wook PARK ,  Ki-Young YUN ,  Won-Soon LEE ,  Young-Ha YOON ,  Tae-Sub IM

IPC: H01J37/08

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32412

Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Abstract translation: 公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接 源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止 导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。

公开(公告)号：US07560712B2

公开(公告)日：2009-07-14

申请号：US11845187

申请日：2007-08-27

Applicant: Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

Inventor： Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

IPC: H01J37/317 ,  H01J37/305

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32412

Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Abstract translation: 公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接 源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止 导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。