公开(公告)号：US08610171B2

公开(公告)日：2013-12-17

申请号：US13139238

申请日：2009-12-08

Applicant: Philippe Bois ,  Olivier Parillaud ,  Xavier Marcadet ,  Michel Papuchon

Inventor： Philippe Bois ,  Olivier Parillaud ,  Xavier Marcadet ,  Michel Papuchon

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L31/105 ,  H01L31/03046 ,  Y02E10/544 ,  Y02P70/521

Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.

Abstract translation: 对于短于约2.5微米的波长敏感的基于半导体的SWIR红外检测器包括基于形成PIN光电二极管的III-V材料的堆叠的半导体层。 堆叠包括用作光学窗口的称为下部电触点的裸电触点; 以及对所述波长敏感的检测层。 下接触包括至少一层掺杂n型，假晶格或晶格匹配的间接带隙III-V材料，该衬底旨在用作可能由III-V材料制成的临时衬底，例如InP 或GaAs或硅或锗。

公开(公告)号：US20110248316A1

公开(公告)日：2011-10-13

申请号：US13139238

申请日：2009-12-08

Applicant: Philippe Bois ,  Olivier Parillaud ,  Xavier Marcadet ,  Michel Papuchon

Inventor： Philippe Bois ,  Olivier Parillaud ,  Xavier Marcadet ,  Michel Papuchon

IPC: H01L31/105 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/03046 ,  Y02E10/544 ,  Y02P70/521

Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.

Abstract translation: 对于短于约2.5微米的波长敏感的基于半导体的SWIR红外检测器包括基于形成PIN光电二极管的III-V材料的堆叠的半导体层。 堆叠包括用作光学窗口的称为下部电触点的裸电触点; 以及对所述波长敏感的检测层。 下接触包括至少一层掺杂n型，假晶格或晶格匹配的间接带隙III-V材料，该衬底旨在用作可能由III-V材料制成的临时衬底，例如InP 或GaAs或硅或锗。

公开(公告)号：US08359904B2

公开(公告)日：2013-01-29

申请号：US12909271

申请日：2010-10-21

Applicant: Sergio Nicoletti ,  Philippe Andreucci ,  Mickaël Brun ,  Serge Gidon ,  Xavier Marcadet ,  Mathieu Carras

Inventor： Sergio Nicoletti ,  Philippe Andreucci ,  Mickaël Brun ,  Serge Gidon ,  Xavier Marcadet ,  Mathieu Carras

IPC: G01N21/01 ,  G01N21/61 ,  G01N21/39

CPC classification number: G01N29/2418 ,  G01N21/1702 ,  G01N2021/1704

Abstract: A photoacoustic detection device including a nanophotonic circuit including a plurality of semiconductor lasers capable of emitting a different frequencies; input couplers connected to optical waveguides; a multiplexer; an output optical waveguide, emerging into a recess; a tuning fork having its free arms arranged at the output of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component.

Abstract translation: 一种光声检测装置，包括具有能够发射不同频率的多个半导体激光器的纳米光子电路; 连接到光波导的输入耦合器; 多路复用器 输出光波导，出现在凹槽中; 音叉具有布置在输出光波导的输出处的自由臂; 以及用于检测音叉的振动的装置，所有这些元件组装在一个整体部件中。

公开(公告)号：US20110088453A1

公开(公告)日：2011-04-21

申请号：US12909271

申请日：2010-10-21

Applicant: Sergio NICOLETTI ,  Philippe Andreucci ,  Mickaël Brun ,  Serge Gidon ,  Xavier Marcadet ,  Mathieu Carras

Inventor： Sergio NICOLETTI ,  Philippe Andreucci ,  Mickaël Brun ,  Serge Gidon ,  Xavier Marcadet ,  Mathieu Carras

IPC: G01N21/17 ,  C23F1/00

CPC classification number: G01N29/2418 ,  G01N21/1702 ,  G01N2021/1704

Abstract: A photoacoustic detection device including a nanophotonic circuit including a plurality of semiconductor lasers capable of emitting a different frequencies; input couplers connected to optical waveguides; a multiplexer; an output optical waveguide, emerging into a recess; a tuning fork having its free arms arranged at the output of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component.

Abstract translation: 一种光声检测装置，包括具有能够发射不同频率的多个半导体激光器的纳米光子电路; 连接到光波导的输入耦合器; 多路复用器 输出光波导，出现在凹槽中; 音叉具有布置在输出光波导的输出处的自由臂; 以及用于检测音叉的振动的装置，所有这些元件组装在一个整体部件中。