摘要:
A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.
摘要:
The invention relates to a multispectral imaging device comprising a multiple-quantum-well structure operating on inter-sub-band transitions by absorbing radiation at a wavelength λ lying within a set of wavelengths to which said structure is sensitive, said structure comprising a matrix of individual detection pixels, characterized in that the matrix is organized in subsets (Eij) of four individual detection pixels, a first individual detection pixel (Pλ1) comprising a first diffraction grating (Rλ1) sensitive to a first subset of wavelengths, a second individual detection pixel (Pλ2) comprising a second diffraction grating (Rλ2) sensitive to a second subset of wavelengths, a third individual detection pixel (Pλ3) comprising a third diffraction grating (Rλ3) sensitive to a third subset of wavelengths and a fourth individual detection pixel (PΔλ) not comprising a wavelength-selective diffraction grating, the first, second and third subsets of wavelengths belonging to the set of wavelengths to which said structure is sensitive.
摘要:
The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector.It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31).The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.
摘要:
Disclosed is an integrated direction finder that can be used to determine the direction of a light beam and, in particular, a laser beam. This direction finder has a substrate transparent to the light beam and means on the rear face to channel a part of the light flux received on this face to the front face which has several photodetector elements. Application to optical measurements.
摘要:
The invention relates to a multispectral imaging device comprising a multiple-quantum-well structure operating on inter-sub-band transitions by absorbing radiation at a wavelength λ lying within a set of wavelengths to which said structure is sensitive, said structure comprising a matrix of individual detection pixels, characterized in that the matrix is organized in subsets (Eij) of four individual detection pixels, a first individual detection pixel (Pλ1) comprising a first diffraction grating (Rλ1) sensitive to a first subset of wavelengths, a second individual detection pixel (Pλ2) comprising a second diffraction grating (Rλ2) sensitive to a second subset of wavelengths, a third individual detection pixel (Pλ3) comprising a third diffraction grating (Rλ3) sensitive to a third subset of wavelengths and a fourth individual detection pixel (PΔλ) not comprising a wavelength-selective diffraction grating, the first, second and third subsets of wavelengths belonging to the set of wavelengths to which said structure is sensitive.
摘要:
The invention relates to a detector comprising a multiple quantum well structure operating on interband or intersubband transitions by absorption of radiation having a wavelength λ having a polarization comprising a component perpendicular to the plane of the multiple quantum well structure, and comprising optical coupling means for coupling said radiation, wherein the coupling means comprise a set of first diffractive lamellar features that are distributed along at least a first direction and a set of second diffractive lamellar features that are distributed along at least a second direction, said first and second directions being mutually perpendicular and lying in a plane parallel to the plane of the multiple quantum well structure.
摘要:
The invention relates to an optical coupling structure intended to couple electromagnetic radiation to the surface of a photodetector, wherein a coupling surface paved along mutually perpendicular first and second directions by a set of N series (M1i, M2i, . . . . Mni) of first features, second features, . . . nth features, the features being identical within any one series, the features being distributed along the first and second directions, the distance between the centers of two adjacent features or the inter-reticular distances between two adjacent features being variable. The subject of the invention is also a detector or a laser source comprising said coupling structure.
摘要:
The basic idea is as follows: operational simulations of subtractive focal planes, based on the French patent No. 2 756 666, have shown that the optimal subtraction rate should not be total in order to preserve the dynamic range of the system. In this case, the low-frequency fluctuations of the temperature of the focal plane of the bias voltages will be amplified and will give rise to a fluctuation of the mean gray level of the signal at output of the multiplexer. This variation can be corrected simply by: the making of several columns of subtractive pixels without diffraction grating, for which the integrated signal is directly the residual level of the thermal current; the integration of a comparator circuit at input of the electronic card to subtract the signal generated in the reference pixels from the signals integrated into the active pixels.
摘要:
An electronic bolometer comprises at least a quantum well between two barrier layers. It has an input side parallel to the quantum-well layer and receiving a beam at a quasi-normal incidence angle. Two electrodes disposed perpendicularly to the quantum-well layers allow to measure a change in the resistivity of said quantum well.
摘要:
A bi-functional optical detector including a first active photoconduction detection element configured to detect light within first and second wavelength ranges, a first diffraction grating associated with the first detection element and configured to couple the light within the first wavelength range so that the first active photoconducting detection element detects the light in the first wavelength range, a second active photoconduction detection element configured to detect light within the first and second wavelength ranges, and a second diffraction grating associated with the second detection element and configured to couple the light within the second wavelength range so that the second active photoconduction detection element detects the light in the second wavelength range. Also included is a third active photoconduction detection element associated with the first detection element and configured to detect the light within the first and second wavelength ranges, a fourth active photoconduction detection element associated with the second detection element and configured to detect the light within the first and second wavelength ranges, and a common contact layer separating the first and second detection elements from the third and fourth detection elements.