公开(公告)号：US20120292628A1

公开(公告)日：2012-11-22

申请号：US13471911

申请日：2012-05-15

申请人： Xueyan TIAN ,  Chunping LONG ,  Jiangfeng YAO

发明人： Xueyan TIAN ,  Chunping LONG ,  Jiangfeng YAO

IPC分类号： H01L27/105 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78696

摘要： One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner.

摘要翻译： 所公开技术的一个或多个实施例提供薄膜晶体管，阵列基板及其制备方法。 薄膜晶体管依次包括在基底基板上制备的基底基板，栅电极，栅极绝缘层，有源层，欧姆接触层，源电极，漏电极和钝化层。 有源层由微晶硅形成，有源层包括有源层下部和有源层上部，有源层下部是通过使用氢等离子体来处理至少两层非晶硅薄膜而得到的微晶硅 电影以逐层方式准备。

公开(公告)号：US08975124B2

公开(公告)日：2015-03-10

申请号：US13471911

申请日：2012-05-15

申请人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

发明人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/00 ,  H01L29/76 ,  H01L31/112 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78696

摘要： One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner.

摘要翻译： 所公开技术的一个或多个实施例提供薄膜晶体管，阵列基板及其制备方法。 薄膜晶体管依次包括在基底基板上制备的基底基板，栅电极，栅极绝缘层，有源层，欧姆接触层，源电极，漏电极和钝化层。 有源层由微晶硅形成，有源层包括有源层下部和有源层上部，有源层下部是通过使用氢等离子体来处理至少两层非晶硅薄膜而获得的微晶硅 电影以逐层方式准备。

公开(公告)号：US20140057419A1

公开(公告)日：2014-02-27

申请号：US13703122

申请日：2012-10-22

申请人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

发明人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC分类号： H01L21/02

CPC分类号： H01L21/02675 ,  H01L21/02436 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02664 ,  H01L21/02686 ,  H01L21/32115 ,  H01L27/1285

摘要： Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can comprise: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an excimer laser annealing process on the amorphous silicon layer to form a polysilicon layer; oxidizing partially the polysilicon layer so as to form an oxidation portion at an upper portion of the polysilicon layer; and removing the oxidation portion of the polysilicon layer to form a polysilicon thin film.

摘要翻译： 本发明的实施方式提供了形成低温多晶硅薄膜的方法。 形成低温多晶硅薄膜的方法可以包括：依次在衬底上沉积缓冲层和非晶硅层; 加热非晶硅层; 对非晶硅层进行准分子激光退火处理以形成多晶硅层; 部分氧化多晶硅层，以在多晶硅层的上部形成氧化部分; 并去除多晶硅层的氧化部分以形成多晶硅薄膜。