公开(公告)号：US20120292628A1

公开(公告)日：2012-11-22

申请号：US13471911

申请日：2012-05-15

申请人： Xueyan TIAN ,  Chunping LONG ,  Jiangfeng YAO

发明人： Xueyan TIAN ,  Chunping LONG ,  Jiangfeng YAO

IPC分类号： H01L27/105 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78696

摘要： One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner.

摘要翻译： 所公开技术的一个或多个实施例提供薄膜晶体管，阵列基板及其制备方法。 薄膜晶体管依次包括在基底基板上制备的基底基板，栅电极，栅极绝缘层，有源层，欧姆接触层，源电极，漏电极和钝化层。 有源层由微晶硅形成，有源层包括有源层下部和有源层上部，有源层下部是通过使用氢等离子体来处理至少两层非晶硅薄膜而得到的微晶硅 电影以逐层方式准备。

公开(公告)号：US20120009708A1

公开(公告)日：2012-01-12

申请号：US13242468

申请日：2011-09-23

申请人： Xinxin LI ,  Wei Wang ,  Chunping Long

发明人： Xinxin LI ,  Wei Wang ,  Chunping Long

IPC分类号： H01L33/08

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了薄膜晶体管液晶显示器（TFT-LCD）薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源电极，漏电极和源极和漏电极之间的沟道区。 源极延伸区域与源极连接，漏极延伸区域与漏极电极连接，源极延伸区域与漏极延伸区域相对设置，以在它们之间形成沟道延伸区域。

公开(公告)号：US20110273639A1

公开(公告)日：2011-11-10

申请号：US13101257

申请日：2011-05-05

申请人： Zhenyu XIE ,  Chunping LONG

发明人： Zhenyu XIE ,  Chunping LONG

IPC分类号： G02F1/1368 ,  H01L33/62

CPC分类号： H01L27/1288 ,  G02F1/136286 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124

摘要： A manufacturing method of an array substrate comprises forming gate lines, data lines, pixel electrodes, and gate electrodes, active layer members, source electrodes, drain electrodes of thin film transistors (TFTs) in pixel units in a display region and forming the gate lines and the data lines in a pad region. A process of forming the data lines, the active layer members, the source electrodes and the drain electrodes in the display region and simultaneously forming the data lines in the pad region is performed.

摘要翻译： 阵列基板的制造方法包括在显示区域中以像素单位形成栅极线，数据线，像素电极和栅电极，有源层部件，源电极，薄膜晶体管（TFT）的漏电极，并形成栅极线 和焊盘区域中的数据线。 执行在显示区域中形成数据线，有源层部件，源电极和漏极以及同时形成焊盘区域中的数据线的工序。

公开(公告)号：US07696088B2

公开(公告)日：2010-04-13

申请号：US11958634

申请日：2007-12-18

申请人： Chunping Long ,  Xinxin Li

发明人： Chunping Long ,  Xinxin Li

IPC分类号： H01L21/44

CPC分类号： H01L27/124 ,  Y10S438/951

摘要： A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.

摘要翻译： 一种形成栅极线和栅电极的方法和制造TFT阵列基板的方法。 金属栅极线和栅极可以通过以下方式形成：提供衬底，在衬底上形成光致抗蚀剂层，形成与栅极线和栅电极互补的光致抗蚀剂图案，形成金属Cu薄膜或复合薄膜 在基板上包含金属Cu薄膜的薄膜，以及从基板上去除其上形成有金属Cu薄膜的光刻胶图案和金属Cu薄膜或复合薄膜。

公开(公告)号：US09059214B2

公开(公告)日：2015-06-16

申请号：US13469567

申请日：2012-05-11

申请人： Zheng Liu ,  Chunping Long ,  Chunsheng Jiang ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Yinan Liang

发明人： Zheng Liu ,  Chunping Long ,  Chunsheng Jiang ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Yinan Liang

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/6675 ,  H01L27/1277

摘要： Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.

摘要翻译： 所公开的技术的实施例涉及一种用于制造具有多晶硅有源层的薄膜晶体管（TFT）的方法，包括：在衬底上沉积非晶硅层，并且对非晶硅层进行构图以形成包括源极 区域，漏极区域和沟道区域; 在所述源极区域和所述漏极区域上沉积感应金属层; 在具有诱导金属层的有源层上进行第一热处理，使得活性层在诱导金属的作用下结晶; 用第一杂质掺杂源区和漏区以收集诱导金属; 以及对掺杂的有源层进行第二热处理，使得第一杂质吸收留在沟道区中的诱导金属。

公开(公告)号：US08493541B2

公开(公告)日：2013-07-23

申请号：US13101257

申请日：2011-05-05

申请人： Zhenyu Xie ,  Chunping Long

发明人： Zhenyu Xie ,  Chunping Long

IPC分类号： G02F1/13

CPC分类号： H01L27/1288 ,  G02F1/136286 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124

摘要： A manufacturing method of an array substrate comprises forming gate lines, data lines, pixel electrodes, and gate electrodes, active layer members, source electrodes, drain electrodes of thin film transistors (TFTs) in pixel units in a display region and forming the gate lines and the data lines in a pad region. A process of forming the data lines, the active layer members, the source electrodes and the drain electrodes in the display region and simultaneously forming the data lines in the pad region is performed.

摘要翻译： 阵列基板的制造方法包括在显示区域中以像素单位形成栅极线，数据线，像素电极和栅电极，有源层部件，源电极，薄膜晶体管（TFT）的漏电极，并形成栅极线 和焊盘区域中的数据线。 执行在显示区域中形成数据线，有源层部件，源电极和漏极以及同时形成焊盘区域中的数据线的工序。

公开(公告)号：US08377758B2

公开(公告)日：2013-02-19

申请号：US13242468

申请日：2011-09-23

申请人： Xinxin Li ,  Wei Wang ,  Chunping Long

发明人： Xinxin Li ,  Wei Wang ,  Chunping Long

IPC分类号： H01L21/339 ,  H01L21/44

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了一种用于薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源电极，漏电极和源极和漏电极之间的沟道区。 源极延伸区域与源极连接，漏极延伸区域与漏极电极连接，源极延伸区域与漏极延伸区域相对设置，以在它们之间形成沟道延伸区域。

公开(公告)号：US07851806B2

公开(公告)日：2010-12-14

申请号：US12434372

申请日：2009-05-01

申请人： Chunping Long ,  Jigang Zhao ,  Seung Moo Rim

发明人： Chunping Long ,  Jigang Zhao ,  Seung Moo Rim

IPC分类号： H01L29/04 ,  H01L21/00

CPC分类号： H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1214

摘要： The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process.

摘要翻译： 本发明公开了通过在两个光刻工艺中仅使用两个掩模的灰色蒙版技术和光致抗蚀剂剥离技术以及由其制造的TFT LCD阵列基板来制造TFT LCD阵列基板的方法。 在合成的阵列基板中，栅极线和数据线彼此垂直并相交，以限定像素区域，并且栅极线和数据线之一是连续的，而另一个是不连续的。 阵列基板被钝化保护膜覆盖。 断开的栅线或数据线通过形成在钝化保护膜上的通孔和形成在钝化保护膜上的连接导电膜连接在一起。 TFT的数据线和源电极和漏电极由相同的导电膜制成，并且在相同的光刻工艺中，连接导电膜和像素电极由相同的导电膜制成。

公开(公告)号：US08525759B2

公开(公告)日：2013-09-03

申请号：US12908060

申请日：2010-10-20

申请人： Chunping Long ,  Haoran Gao

发明人： Chunping Long ,  Haoran Gao

IPC分类号： G09G3/30 ,  G09G3/10

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/045

摘要： A voltage-driving pixel unit comprises a voltage-driving pixel circuit and an organic light emitting diode (OLED) driven by the voltage-driving pixel circuit is provided. The voltage-driving pixel circuit comprises a gate line, a data line, a power source line, a ground terminal, a switching transistor, a driving transistor, a compensating transistor, a blocking transistor and a storage capacitor.

摘要翻译： 电压驱动像素单元包括电压驱动像素电路和由电压驱动像素电路驱动的有机发光二极管（OLED）。 电压驱动像素电路包括栅极线，数据线，电源线，接地端子，开关晶体管，驱动晶体管，补偿晶体管，阻塞晶体管和存储电容器。

公开(公告)号：US08049216B2

公开(公告)日：2011-11-01

申请号：US12104575

申请日：2008-04-17

申请人： Xinxin Li ,  Wei Wang ,  Chunping Long

发明人： Xinxin Li ,  Wei Wang ,  Chunping Long

IPC分类号： H01L29/04 ,  H01L29/10

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source, a drain, and a channel region between the source and drain. A source extension region is connected with the source, a drain extension region is connected with the drain, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了一种用于薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源极，漏极和源极与漏极之间的沟道区域。 源极延伸区域与源极连接，漏极延伸区域与漏极连接，源极延伸区域与漏极延伸区域相对设置，以在它们之间形成沟道延伸区域。