公开(公告)号：US08704375B2

公开(公告)日：2014-04-22

申请号：US12613417

申请日：2009-11-05

申请人： Max Liu ,  Chao-Shun Hsu ,  Ya-Wen Tseng ,  Wen-Chih Chiou ,  Weng-Jin Wu

发明人： Max Liu ,  Chao-Shun Hsu ,  Ya-Wen Tseng ,  Wen-Chih Chiou ,  Weng-Jin Wu

IPC分类号： H01L23/48 ,  H01L29/417 ,  H01L23/498 ,  H01L21/768

CPC分类号： H01L29/4175 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L2223/6622 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043

摘要： Through substrate via barrier structures and methods are disclosed. In one embodiment, a semiconductor device includes a first substrate including an active device region disposed within isolation regions. A through substrate via is disposed adjacent to the active device region and within the first substrate. A buffer layer is disposed around at least a portion of the through substrate via, wherein the buffer layer is disposed between the isolation regions and the through substrate via.

摘要翻译： 公开了通过基板通过阻挡结构和方法。 在一个实施例中，半导体器件包括包括设置在隔离区域内的有源器件区域的第一衬底。 贯穿衬底通孔邻近有源器件区域并在第一衬底内设置。 缓冲层设置在穿过基底通孔的至少一部分周围，其中缓冲层设置在隔离区域和穿通基底通孔之间。

公开(公告)号：US20100193954A1

公开(公告)日：2010-08-05

申请号：US12613417

申请日：2009-11-05

申请人： Max Liu ,  Chao-Shun Hsu ,  Ya-Wen Tseng ,  Wen-Chih Chiou ,  Weng-Jin Wu

发明人： Max Liu ,  Chao-Shun Hsu ,  Ya-Wen Tseng ,  Wen-Chih Chiou ,  Weng-Jin Wu

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/762

CPC分类号： H01L29/4175 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L2223/6622 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043

摘要： Through substrate via barrier structures and methods are disclosed. In one embodiment, a semiconductor device includes a first substrate including an active device region disposed within isolation regions. A through substrate via is disposed adjacent to the active device region and within the first substrate. A buffer layer is disposed around at least a portion of the through substrate via, wherein the buffer layer is disposed between the isolation regions and the through substrate via.

摘要翻译： 公开了通过基板通过阻挡结构和方法。 在一个实施例中，半导体器件包括包括设置在隔离区域内的有源器件区域的第一衬底。 贯穿衬底通孔邻近有源器件区域并在第一衬底内设置。 缓冲层设置在穿过基底通孔的至少一部分周围，其中缓冲层设置在隔离区域和穿通基底通孔之间。