公开(公告)号：US09196796B2

公开(公告)日：2015-11-24

申请号：US13816793

申请日：2011-08-09

Applicant: Jong Lam Lee ,  Yang Hee Song

Inventor： Jong Lam Lee ,  Yang Hee Song

IPC: H01L33/30 ,  H01L33/42 ,  H01L29/10 ,  H01L23/48 ,  H01L33/40 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

Abstract: Embodiments of the invention provide a semiconductor light emitting diode having an ohmic electrode structure, and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting structure having an upper surface constituting an N-face; and an ohmic electrode structure located on the light emitting structure. Here, the ohmic electrode structure includes a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and an Al protective layer from the N-face of the light emitting structure.

Abstract translation: 本发明的实施例提供一种具有欧姆电极结构的半导体发光二极管及其制造方法。 半导体发光二极管包括具有构成N面的上表面的发光结构; 以及位于发光结构上的欧姆电极结构。 这里，欧姆电极结构包括来自发光结构的N面的下扩散防止层，接触层，上扩散防止层和Al保护层。

公开(公告)号：US20130221324A1

公开(公告)日：2013-08-29

申请号：US13816793

申请日：2011-08-09

Applicant: Jong Lam Lee ,  Yang Hee Song

Inventor： Jong Lam Lee ,  Yang Hee Song

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

Abstract: Embodiments of the invention provide a semiconductor light emitting diode having an ohmic electrode structure, and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting structure having an upper surface constituting an N-face; and an ohmic electrode structure located on the light emitting structure. Here, the ohmic electrode structure includes a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and an Al protective layer from the N-face of the light emitting structure.

Abstract translation: 本发明的实施例提供一种具有欧姆电极结构的半导体发光二极管及其制造方法。 半导体发光二极管包括具有构成N面的上表面的发光结构; 以及位于发光结构上的欧姆电极结构。 这里，欧姆电极结构包括来自发光结构的N面的下扩散防止层，接触层，上扩散防止层和Al保护层。

公开(公告)号：US20130126929A1

公开(公告)日：2013-05-23

申请号：US13812517

申请日：2011-10-28

Applicant: Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

Inventor： Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

IPC: H01L33/32 ,  H01L33/36 ,  H01L21/302 ,  H01L21/027

CPC classification number: H01L33/32 ,  B82Y40/00 ,  H01L21/302 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/36 ,  H01L33/44 ,  H01L2933/0091

Abstract: A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.

公开(公告)号：US20120168803A1

公开(公告)日：2012-07-05

申请号：US13394714

申请日：2010-09-07

Applicant: Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

Inventor： Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

IPC: H01L33/60 ,  H01L33/62

CPC classification number: H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/387

Abstract: Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.

Abstract translation: 提供一种包括具有发光结构的半导体层的半导体发光二极管; 以及在半导体层上并入有纳米点层，接触层，扩散防止层和覆盖层的欧姆电极。 纳米点层形成在半导体层的N-极性表面上，并且由包含Ag，Al和Au中的至少一种的物质形成。 还提供了一种生产方法。 在这种半导体发光二极管中具有包含纳米点层/接触层/扩散防止层/覆盖层的多层结构的欧姆电极中，纳米点层构成氮化物半导体的N-极性表面 并且提高了电荷注入特性，从而可以获得出色的欧姆特性。

公开(公告)号：US08957449B2

公开(公告)日：2015-02-17

申请号：US13812517

申请日：2011-10-28

Applicant: Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

Inventor： Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

IPC: H01L33/00 ,  H01L21/18 ,  H01L29/06 ,  H01L31/109 ,  H01L33/32 ,  H01L21/302 ,  H01L33/36 ,  H01L33/22 ,  B82Y40/00 ,  H01L33/44

CPC classification number: H01L33/32 ,  B82Y40/00 ,  H01L21/302 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/36 ,  H01L33/44 ,  H01L2933/0091

Abstract: A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.

Abstract translation: 一种制造发光二极管的方法包括在临时衬底上形成n型氮化物半导体层，发光层和p型氮化物半导体层的工艺，在p型电极上形成p型电极的工艺 p型氮化物半导体层，在p型电极上形成导电性基板的工序，去除临时基板以露出n型氮化物半导体层的工序，在n型氮化物半导体层上形成纳米压印抗蚀剂层的工序 型氮化物半导体层，将纳米压印模具压在纳米压印抗蚀剂层上以将纳米图案转印到纳米压印抗蚀剂层上的过程，以及将纳米压印模具与具有纳米图案和蚀刻的纳米压印抗蚀剂层分离的过程 纳米压印抗蚀剂层的一部分具有纳米图案以形成n型电极。

公开(公告)号：US08552455B2

公开(公告)日：2013-10-08

申请号：US13394714

申请日：2010-09-07

Applicant: Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

Inventor： Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

IPC: H01L33/60

CPC classification number: H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/387

Abstract: Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.

Abstract translation: 提供一种包括具有发光结构的半导体层的半导体发光二极管; 以及在半导体层上并入有纳米点层，接触层，扩散防止层和覆盖层的欧姆电极。 纳米点层形成在半导体层的N-极性表面上，并由包含Ag，Al和Au中的至少一种的物质形成。 还提供了一种生产方法。 在这种半导体发光二极管中具有包含纳米点层/接触层/扩散防止层/覆盖层的多层结构的欧姆电极中，纳米点层构成氮化物半导体的N-极性表面 并且提高了电荷注入特性，从而可以获得出色的欧姆特性。