公开(公告)号：US09196796B2

公开(公告)日：2015-11-24

申请号：US13816793

申请日：2011-08-09

申请人： Jong Lam Lee ,  Yang Hee Song

发明人： Jong Lam Lee ,  Yang Hee Song

IPC分类号： H01L33/30 ,  H01L33/42 ,  H01L29/10 ,  H01L23/48 ,  H01L33/40 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Embodiments of the invention provide a semiconductor light emitting diode having an ohmic electrode structure, and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting structure having an upper surface constituting an N-face; and an ohmic electrode structure located on the light emitting structure. Here, the ohmic electrode structure includes a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and an Al protective layer from the N-face of the light emitting structure.

摘要翻译： 本发明的实施例提供一种具有欧姆电极结构的半导体发光二极管及其制造方法。 半导体发光二极管包括具有构成N面的上表面的发光结构; 以及位于发光结构上的欧姆电极结构。 这里，欧姆电极结构包括来自发光结构的N面的下扩散防止层，接触层，上扩散防止层和Al保护层。

公开(公告)号：US20130221324A1

公开(公告)日：2013-08-29

申请号：US13816793

申请日：2011-08-09

申请人： Jong Lam Lee ,  Yang Hee Song

发明人： Jong Lam Lee ,  Yang Hee Song

IPC分类号： H01L33/40

CPC分类号： H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Embodiments of the invention provide a semiconductor light emitting diode having an ohmic electrode structure, and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting structure having an upper surface constituting an N-face; and an ohmic electrode structure located on the light emitting structure. Here, the ohmic electrode structure includes a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and an Al protective layer from the N-face of the light emitting structure.

摘要翻译： 本发明的实施例提供一种具有欧姆电极结构的半导体发光二极管及其制造方法。 半导体发光二极管包括具有构成N面的上表面的发光结构; 以及位于发光结构上的欧姆电极结构。 这里，欧姆电极结构包括来自发光结构的N面的下扩散防止层，接触层，上扩散防止层和Al保护层。

公开(公告)号：US20130126929A1

公开(公告)日：2013-05-23

申请号：US13812517

申请日：2011-10-28

申请人： Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

发明人： Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

IPC分类号： H01L33/32 ,  H01L33/36 ,  H01L21/302 ,  H01L21/027

CPC分类号： H01L33/32 ,  B82Y40/00 ,  H01L21/302 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/36 ,  H01L33/44 ,  H01L2933/0091

摘要： A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.

公开(公告)号：US08957449B2

公开(公告)日：2015-02-17

申请号：US13812517

申请日：2011-10-28

申请人： Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

发明人： Jong Lam Lee ,  Jun Ho Son ,  Yang Hee Song

IPC分类号： H01L33/00 ,  H01L21/18 ,  H01L29/06 ,  H01L31/109 ,  H01L33/32 ,  H01L21/302 ,  H01L33/36 ,  H01L33/22 ,  B82Y40/00 ,  H01L33/44

CPC分类号： H01L33/32 ,  B82Y40/00 ,  H01L21/302 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/36 ,  H01L33/44 ,  H01L2933/0091

摘要： A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.

摘要翻译： 一种制造发光二极管的方法包括在临时衬底上形成n型氮化物半导体层，发光层和p型氮化物半导体层的工艺，在p型电极上形成p型电极的工艺 p型氮化物半导体层，在p型电极上形成导电性基板的工序，去除临时基板以露出n型氮化物半导体层的工序，在n型氮化物半导体层上形成纳米压印抗蚀剂层的工序 型氮化物半导体层，将纳米压印模具压在纳米压印抗蚀剂层上以将纳米图案转印到纳米压印抗蚀剂层上的过程，以及将纳米压印模具与具有纳米图案和蚀刻的纳米压印抗蚀剂层分离的过程 纳米压印抗蚀剂层的一部分具有纳米图案以形成n型电极。

公开(公告)号：US08552455B2

公开(公告)日：2013-10-08

申请号：US13394714

申请日：2010-09-07

申请人： Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

发明人： Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

IPC分类号： H01L33/60

CPC分类号： H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/387

摘要： Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.

摘要翻译： 提供一种包括具有发光结构的半导体层的半导体发光二极管; 以及在半导体层上并入有纳米点层，接触层，扩散防止层和覆盖层的欧姆电极。 纳米点层形成在半导体层的N-极性表面上，并由包含Ag，Al和Au中的至少一种的物质形成。 还提供了一种生产方法。 在这种半导体发光二极管中具有包含纳米点层/接触层/扩散防止层/覆盖层的多层结构的欧姆电极中，纳米点层构成氮化物半导体的N-极性表面 并且提高了电荷注入特性，从而可以获得出色的欧姆特性。

公开(公告)号：US20120168803A1

公开(公告)日：2012-07-05

申请号：US13394714

申请日：2010-09-07

申请人： Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

发明人： Jong Lam Lee ,  Yang Hee Song ,  Jun Ho Son ,  Buem Joon Kim

IPC分类号： H01L33/60 ,  H01L33/62

CPC分类号： H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/387

摘要： Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.

摘要翻译： 提供一种包括具有发光结构的半导体层的半导体发光二极管; 以及在半导体层上并入有纳米点层，接触层，扩散防止层和覆盖层的欧姆电极。 纳米点层形成在半导体层的N-极性表面上，并且由包含Ag，Al和Au中的至少一种的物质形成。 还提供了一种生产方法。 在这种半导体发光二极管中具有包含纳米点层/接触层/扩散防止层/覆盖层的多层结构的欧姆电极中，纳米点层构成氮化物半导体的N-极性表面 并且提高了电荷注入特性，从而可以获得出色的欧姆特性。

公开(公告)号：US08993997B2

公开(公告)日：2015-03-31

申请号：US13809052

申请日：2011-06-23

申请人： Jong Lam Lee ,  Jun Ho Son ,  Hak Ki Yu

发明人： Jong Lam Lee ,  Jun Ho Son ,  Hak Ki Yu

IPC分类号： H01L33/22 ,  H01L33/02 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/58 ,  H01L33/007 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0058

摘要： A gallium nitride-based group III-V compound semiconductor light emitting device and a method for fabricating the same are provided. The gallium nitride-based group III-V compound semiconductor light emitting device includes: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index adjustment layers having refractive index smaller than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, wherein a pyramid structure is formed on the surface of the second refractive index adjustment layer.

摘要翻译： 提供了一种氮化镓基III-V族化合物半导体发光器件及其制造方法。 所述氮化镓系III-V族化合物半导体发光元件包括：基板; 在该基板上形成的p型欧姆电极层; 形成在p型欧姆电极层上的p型氮化镓基III-V族化合物半导体层; 形成在p型氮化镓基III-V族化合物半导体层上的n型氮化镓基III-V族化合物半导体层; 形成在n型氮化镓基III-V族化合物半导体层上的n型欧姆电极层; 以及折射率小于n型氮化镓基III-V族化合物半导体层和n型欧姆电极层的折射率的第一和第二折射率调节层，其中在 第二折射率调节层。

公开(公告)号：US08860070B2

公开(公告)日：2014-10-14

申请号：US13512269

申请日：2010-11-25

申请人： Jong Lam Lee

发明人： Jong Lam Lee

IPC分类号： H01L33/00 ,  H01L31/0256 ,  H01L21/00 ,  H01L33/22 ,  H01L33/30

CPC分类号： H01L33/22 ,  H01L33/30 ,  H01L33/305 ,  H01L33/405 ,  H01L2933/0083

摘要： The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based πi-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based πi-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based πi-V group compound semiconductor layer on the p-type GaN-based πi-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening.

摘要翻译： 本公开提供了一种垂直GaN基半导体二极管及其制造方法。 GaN基和半导体组件半导体器件包括衬底，衬底上的p型欧姆电极层，p型欧姆电极层上的p型GaN基和pV族化合物半导体层，n 在p型GaN基和iV族化合物半导体层上的n型GaN基和iV族化合物半导体层以及n型GaN基IE-V族化合物半导体上的n型欧姆电极层 层。 p型欧姆电极层是具有70％以上的高反射率的Ag系高反射性电极，n型GaN系EV基化合物半导体层的表面经受以下工序中的至少一种： 形成光子晶体和表面粗糙化的过程。

公开(公告)号：US20130207074A1

公开(公告)日：2013-08-15

申请号：US13809052

申请日：2011-06-23

申请人： Jong Lam Lee ,  Jun Ho Son ,  Hak Ki Yu

发明人： Jong Lam Lee ,  Jun Ho Son ,  Hak Ki Yu

IPC分类号： H01L33/22

CPC分类号： H01L33/58 ,  H01L33/007 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0058

摘要： A gallium nitride-based group III-V compound semiconductor light emitting device and a method for fabricating the same are provided. The gallium nitride-based group III-V compound semiconductor light emitting device includes: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index adjustment layers having refractive index smaller than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, wherein a pyramid structure is formed on the surface of the second refractive index adjustment layer.

摘要翻译： 提供了一种氮化镓基III-V族化合物半导体发光器件及其制造方法。 所述氮化镓系III-V族化合物半导体发光元件包括：基板; 在该基板上形成的p型欧姆电极层; 形成在p型欧姆电极层上的p型氮化镓基III-V族化合物半导体层; 形成在p型氮化镓基III-V族化合物半导体层上的n型氮化镓基III-V族化合物半导体层; 形成在n型氮化镓基III-V族化合物半导体层上的n型欧姆电极层; 以及折射率小于n型氮化镓基III-V族化合物半导体层和n型欧姆电极层的折射率的第一和第二折射率调节层，其中在 第二折射率调节层。

公开(公告)号：US07214325B2

公开(公告)日：2007-05-08

申请号：US10103523

申请日：2002-03-22

申请人： Jong Lam Lee ,  Ho Won Jang ,  Jong Kyu Kim ,  Changmin Jeon

发明人： Jong Lam Lee ,  Ho Won Jang ,  Jong Kyu Kim ,  Changmin Jeon

IPC分类号： H01L21/44

CPC分类号： H01L21/28575

摘要： Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.

摘要翻译： 在形成金属接触之前，通过使用氯气感应耦合等离子体（ICP）蚀刻工艺处理GaN表面，在GaN膜上形成低收缩电阻金属接触。 有利地，GaN是n型并掺杂有Si，而金属触点包括Ti和Al的交替层。 另外，在金属接触形成之前，将GaN膜浸入HCl：H 2 O 2的溶液中。