公开(公告)号：US07793551B2

公开(公告)日：2010-09-14

申请号：US12184426

申请日：2008-08-01

申请人： Hiromi Shimazu ,  Yohei Tanno ,  Hiroyuki Ohta ,  Ryuji Takada ,  Takayuki Shimodaira

发明人： Hiromi Shimazu ,  Yohei Tanno ,  Hiroyuki Ohta ,  Ryuji Takada ,  Takayuki Shimodaira

IPC分类号： G01B7/16

CPC分类号： G01L1/2225 ,  G01L1/18 ,  G01L1/26 ,  G01L5/162 ,  Y10T29/49103

摘要： The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

摘要翻译： 本发明提供了一种由低功耗驱动的负载传感器，可以高精度地测量，并且具有高可靠性而不被破坏。 负载传感器被构造成使得用于检测应变的检测杆通过冲击松弛材料设置在靠近销的中心的孔的内部，并且半导体应变传感器设置在检测棒中，在负载 传感器检测从销的内部产生的应变施加到销的负载。

公开(公告)号：US07584668B2

公开(公告)日：2009-09-08

申请号：US11834727

申请日：2007-08-07

申请人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno ,  Yoshihisa Kiyotoki ,  Kenji Onodera ,  Kenji Araki

发明人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno ,  Yoshihisa Kiyotoki ,  Kenji Onodera ,  Kenji Araki

IPC分类号： G01B7/16

CPC分类号： G01B7/18 ,  F16K37/0083

摘要： A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

摘要翻译： 根据本发明的阀装置的监测系统包括包括桥接电路的半导体单晶衬底和包括杂质扩散电阻器的桥接电路。 半导体单晶衬底安装在设置在驱动轴端部的阀装置的阀杆，阀杆，驱动轴或弹性体中的任一个上。 通过半导体单晶衬底测量阀装置的推力和扭矩，然后测量值用于监测阀装置。

公开(公告)号：US20070228500A1

公开(公告)日：2007-10-04

申请号：US11709075

申请日：2007-02-20

申请人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

发明人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

IPC分类号： H01L27/20 ,  H01L29/84

CPC分类号： G01L1/2293 ,  G01B7/18 ,  G01L1/18

摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.

摘要翻译： 提供能够高精度地测量特定方向的应变分量的机械量测量装置。 在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为 与半导体单晶硅衬底的<100>方向并联，并且另一桥接电路由与<110>方向平行的p型扩散电阻器的组合组成。

公开(公告)号：US20110259112A1

公开(公告)日：2011-10-27

申请号：US13177185

申请日：2011-07-06

申请人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

发明人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

IPC分类号： G01B7/16

CPC分类号： G01L1/2293 ,  G01B7/18 ,  G01L1/18

摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.

摘要翻译： 提供能够高精度地测量特定方向的应变分量的机械量测量装置。 在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为 与半导体单晶硅基板的<100>方向并联，另一桥接电路由与<110>方向并联的p型扩散电阻器的组合构成。

公开(公告)号：US07992448B2

公开(公告)日：2011-08-09

申请号：US11709075

申请日：2007-02-20

申请人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

发明人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

IPC分类号： G01L1/18 ,  G01L1/22

CPC分类号： G01L1/2293 ,  G01B7/18 ,  G01L1/18

摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.

摘要翻译： 提供能够高精度地测量特定方向的应变分量的机械量测量装置。 在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为 与半导体单晶硅衬底的<100>方向并联，并且另一桥接电路由与<110>方向平行的p型扩散电阻器的组合组成。

公开(公告)号：US07836755B2

公开(公告)日：2010-11-23

申请号：US11943753

申请日：2007-11-21

申请人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno ,  Mari Uchida ,  Naoto Saito

发明人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno ,  Mari Uchida ,  Naoto Saito

IPC分类号： G01N33/00 ,  G01N37/00 ,  G01N33/18 ,  G01N33/487

CPC分类号： G01N25/02 ,  G01N2203/0075 ,  G01N2203/0092

摘要： In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.

摘要翻译： 在用于以实时高精度测量液体的凝固状态的凝固传感器中，并且为了使传感器小型化而具有降低的功率消耗，凝固传感器包括由液体吸收材料形成的液体吸收部分 ，耦合到液体吸收部分的基板和用于测量由于吸收在液体吸收部分中的液体固化时的体积变化而测量施加到基板的应变传感器。

公开(公告)号：US20080079531A1

公开(公告)日：2008-04-03

申请号：US11844374

申请日：2007-08-24

申请人： Hiroyuki OHTA ,  Hiromi SHIMAZU ,  Yohei TANNO

发明人： Hiroyuki OHTA ,  Hiromi SHIMAZU ,  Yohei TANNO

IPC分类号： G01L1/22

CPC分类号： G01L1/2293

摘要： A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

摘要翻译： 根据本发明的应变测量装置包括：桥接电路，包括作为应变检测部分的p型杂质扩散电阻器和包括作为半导体单晶衬底中的应变检测部分的n型杂质扩散电阻器的桥接电路， p型杂质扩散电阻器的薄层电阻比n型杂质扩散电阻器的薄层电阻高1.67〜5倍。 此外，优选地，杂质扩散电阻器被构造为包括带状线和连接部分的曲折形状。 此外，优选的是，p型杂质扩散电阻器中的带状线的数量小于n型杂质扩散电阻器中的带状线数。

公开(公告)号：US08186228B2

公开(公告)日：2012-05-29

申请号：US13024368

申请日：2011-02-10

申请人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

发明人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

IPC分类号： G01L1/00

CPC分类号： G01L1/2293

摘要： A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

摘要翻译： 应变测量装置包括桥式电路，其包括作为应变检测部分的p型杂质扩散电阻器和包括在半导体单晶衬底中的作为应变检测部分的n型杂质扩散电阻器的桥式电路，p电阻值 型杂质扩散电阻器比n型杂质扩散电阻器高1.67〜5倍。 此外，杂质扩散电阻器被构造为包括带状线和连接部分的曲折形状。

公开(公告)号：US07893810B2

公开(公告)日：2011-02-22

申请号：US11844374

申请日：2007-08-24

申请人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

发明人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

IPC分类号： G01L1/22

CPC分类号： G01L1/2293

摘要： A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

摘要翻译： 根据本发明的应变测量装置包括：桥接电路，包括作为应变检测部分的p型杂质扩散电阻器和包括作为半导体单晶衬底中的应变检测部分的n型杂质扩散电阻器的桥接电路， p型杂质扩散电阻器的薄层电阻比n型杂质扩散电阻器的薄层电阻高1.67〜5倍。 此外，优选地，杂质扩散电阻器被构造为包括带状线和连接部分的曲折形状。 此外，优选的是，p型杂质扩散电阻器中的带状线的数量小于n型杂质扩散电阻器中的带状线数。

公开(公告)号：US08365609B2

公开(公告)日：2013-02-05

申请号：US13177185

申请日：2011-07-06

申请人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

发明人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

IPC分类号： G01L1/18 ,  G01L1/22

CPC分类号： G01L1/2293 ,  G01B7/18 ,  G01L1/18

摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.

摘要翻译： 提供能够高精度地测量特定方向的应变分量的机械量测量装置。 在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为 与半导体单晶硅基板的<100>方向并联，另一桥接电路由与<110>方向并联的p型扩散电阻器的组合构成。