公开(公告)号：US07615498B2

公开(公告)日：2009-11-10

申请号：US11655261

申请日：2007-01-19

申请人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

发明人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832

摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

摘要翻译： 半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210，SiO 2膜212和SiCN膜 214。 第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。 第二SiOC膜210的碳含量被调节为大于第一SiOC膜204的碳含量。这使得可以在保持绝缘夹层的低介电常数的同时，改善绝缘中间层与其它绝缘层的粘附性。

公开(公告)号：US07531891B2

公开(公告)日：2009-05-12

申请号：US11006529

申请日：2004-12-08

申请人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

IPC分类号： H01L23/58 ,  H01L29/00 ,  H01L21/31

CPC分类号： H01L21/76801 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.

摘要翻译： 通过在具有膜密度分布的层间绝缘膜中提供多层膜，其中膜密度逐渐变化，提供了具有改善的构成层间绝缘膜的膜之间粘附性的半导体器件。 通过等离子体CVD工艺沉积厚度为300nm的SiOC膜，其中三甲基硅烷气体的流量逐步增加。 在这种情况下，通过逐步增加三甲基硅烷气体的流量，沉积的SiOC膜的膜密度逐渐降低。 由于三甲基硅烷含有甲基，因此与甲硅烷等相比，三甲基硅烷具有更大的分子结构。 因此，通过增加反应气体中的三甲基硅烷的量来降低膜密度。

公开(公告)号：US20070045861A1

公开(公告)日：2007-03-01

申请号：US11591704

申请日：2006-11-02

申请人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.

摘要翻译： 半导体器件具有半导体衬底和设置在其上的多层布线装置。 多层绞合装置包括其中形成有金属布线图案的至少一个绝缘层结构。 绝缘层结构包括第一SiOCH层，形成在第一SiOCH层上的第二SiOCH层和形成在第二SiOCH层上的二氧化硅（SiO 2）层。 第二SiOCH层的碳（C）密度低于第一SiOCH层的碳（C）密度，氢（H）密度低于第一SiOCH层的密度，氧（O）密度高于第一SiOCH层 。

公开(公告)号：US07180191B2

公开(公告)日：2007-02-20

申请号：US11048929

申请日：2005-02-03

申请人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

发明人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832

摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

摘要翻译： 半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210， SUB>膜212和形成在其上的SiCN膜214。 第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。 第二SiOC膜210的碳含量被调整为大于第一SiOC膜204的碳含量。 这使得可以在保持绝缘中间层的低介电常数的同时提高绝缘中间层与其它绝缘层的粘附性。

公开(公告)号：US07563705B2

公开(公告)日：2009-07-21

申请号：US11359393

申请日：2006-02-23

申请人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

发明人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/H2 gas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

摘要翻译： 一种半导体器件的制造方法，包括在包括诸如MSQ，SiC和SiCN的有机低电介质膜的绝缘层中形成通孔的步骤，然后通过阻挡金属将布线材料包埋在通孔中。 根据该方法，使用能够代替由有机成分构成的基团（甲基）并覆盖暴露的有机物的表面的He / H 2气体，在形成通孔并且在阻挡金属沉积之前进行等离子体处理 具有氢的低介电膜（MSQ）或能够分解基团（甲基）而不去除有机低介电分子的He气体。 结果，低电介质膜（MSQ）的表面被重新形成为亲水性，因此提高了与阻挡金属的粘合性，从而可以防止隔离金属的分离和划痕的发生。

公开(公告)号：US07074698B2

公开(公告)日：2006-07-11

申请号：US10766921

申请日：2004-01-30

申请人： Noboru Morita ,  Tatsuya Usami ,  Koichi Ohto ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

发明人： Noboru Morita ,  Tatsuya Usami ,  Koichi Ohto ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/02126 ,  C23C16/325 ,  C23C16/36 ,  C23C16/401 ,  C23C16/46 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device using a PECVD method is provided, which improves the adhesion strength of a deposited dielectric layer to an underlying layer and the reliability of the deposited dielectric layer. After placing a substrate in a chamber, a gas having a thermal conductivity of 0.1 W/mK or greater (e.g., H2 or He) is introduced into the chamber, thereby contacting the gas with the substrate for stabilization of a temperature of the substrate. A desired dielectric layer is deposited on or over the substrate in the chamber using a PECVD method after the step of introducing the gas. As the desired dielectric layer, a dielectric layer having a low dielectric constant, such as a SiCH, SiCHN, or SiOCH layer, is preferably used.

摘要翻译： 提供了使用PECVD方法制造半导体器件的方法，其提高了沉积的介电层对下层的粘附强度和沉积的介电层的可靠性。 在将基板放置在室中之后，将导热率为0.1W / mK以上的气体（例如H 2 H 2或He）引入到室内，从而使气体与基板接触 稳定基板的温度。 在引入气体的步骤之后，使用PECVD方法将期望的电介质层沉积在室中的衬底上或衬底上。 作为所需的介电层，优选使用具有低介电常数的介电层，例如SiCH，SiCHN或SiOCH层。

公开(公告)号：US20060141778A1

公开(公告)日：2006-06-29

申请号：US11359393

申请日：2006-02-23

申请人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

发明人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/H2 gas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

摘要翻译： 一种半导体器件的制造方法，包括在包括诸如MSQ，SiC和SiCN的有机低电介质膜的绝缘层中形成通孔的步骤，然后通过阻挡金属将布线材料包埋在通孔中。 根据该方法，使用能够代替由有机成分构成的基团（甲基）的He / H 2气体，在形成通路孔之后和隔离金属沉积之前进行等离子体处理 并用氢气覆盖暴露的有机低介电膜（MSQ）的表面，或者能够分解基团（甲基）而不去除有机低介电分子的He气体。 结果，低电介质膜（MSQ）的表面被重新形成为亲水性，因此提高了与阻挡金属的粘附性，从而可以防止隔离金属的分离和划痕的发生。

公开(公告)号：US20070117405A1

公开(公告)日：2007-05-24

申请号：US11655261

申请日：2007-01-19

申请人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

发明人： Yoichi Sasaki ,  Koichi Ohto ,  Noboru Morita ,  Tatsuya Usami ,  Hidenobu Miyamoto

IPC分类号： H01L21/31

CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832

摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

摘要翻译： 半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210， SUB>膜212和形成在其上的SiCN膜214。 第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。 第二SiOC膜210的碳含量被调整为大于第一SiOC膜204的碳含量。 这使得可以在保持绝缘中间层的低介电常数的同时提高绝缘中间层与其它绝缘层的粘附性。

公开(公告)号：US07132732B2

公开(公告)日：2006-11-07

申请号：US10767786

申请日：2004-01-29

申请人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.

摘要翻译： 半导体器件具有半导体衬底和设置在其上的多层布线装置。 多层绞合装置包括其中形成有金属布线图案的至少一个绝缘层结构。 绝缘层结构包括第一SiOCH层，形成在第一SiOCH层上的第二SiOCH层和形成在第二SiOCH层上的二氧化硅（SiO 2）层。 第二SiOCH层的碳（C）密度低于第一SiOCH层的碳（C）密度，氢（H）密度低于第一SiOCH层的密度，氧（O）密度高于第一SiOCH层 。

公开(公告)号：US20050167844A1

公开(公告)日：2005-08-04

申请号：US11006529

申请日：2004-12-08

申请人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

IPC分类号： H01L23/522 ,  H01L21/316 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L21/76801 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.

摘要翻译： 通过在具有膜密度分布的层间绝缘膜中提供多层膜，其中膜密度逐渐变化，提供了具有改善的构成层间绝缘膜的膜之间粘附性的半导体器件。 通过等离子体CVD工艺沉积厚度为300nm的SiOC膜，其中三甲基硅烷气体的流量逐步增加。 在这种情况下，通过逐步增加三甲基硅烷气体的流量，沉积的SiOC膜的膜密度逐渐降低。 由于三甲基硅烷含有甲基，因此与甲硅烷等相比，三甲基硅烷具有更大的分子结构。 因此，通过增加反应气体中的三甲基硅烷的量来降低膜密度。