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公开(公告)号：US08153946B2
公开(公告)日：2012-04-10
申请号：US12266266
申请日：2008-11-06
申请人： Yoshiaki Toyoshima
发明人： Yoshiaki Toyoshima
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H04N5/357
摘要： A semiconductor device includes a light-receiving element which is connected to a negative power supply and generates conductive carriers by receiving light, an amplifier transistor which is a depletion transistor and amplifies an electrical signal obtained by the conductive carriers, and a transfer gate transistor which is a depletion transistor and is controlled by a negative potential applied to a gate to electrically connect or disconnect the light-receiving element and the amplifier transistor.
摘要翻译： 一种半导体器件包括：受光元件，其连接到负电源并通过接收光产生导电载体;放大器晶体管，其是耗尽晶体管，并放大由导电载体获得的电信号;以及传输栅极晶体管， 是耗尽晶体管，并且由施加到栅极的负电位控制以电连接或断开光接收元件和放大器晶体管。
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公开(公告)号：US07820492B2
公开(公告)日：2010-10-26
申请号：US11753837
申请日：2007-05-25
IPC分类号： H01L21/82
CPC分类号： H01L27/115 , H01L21/84 , H01L23/5252 , H01L23/5256 , H01L27/0617 , H01L27/105 , H01L27/11206 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse (eFuse) has a gate prepared from a conductive or partially conductive material such as polysilicon, a semiconductor substrate having a pipe region in proximity to the gate, and first and second electrode regions adjacent the pipe region. A metal silicide layer is provided on the semiconductor substrate adjacent the pipe region. When a programming voltage is applied, the metal silicide undergoes a thermally induced phase transition in the pipe region. The eFuse has improved reliability and can be programmed with relatively low voltages.
摘要翻译： 电熔丝（eFuse）具有由诸如多晶硅的导电或部分导电材料制备的栅极，具有靠近栅极的管区域的半导体衬底以及与管道区域相邻的第一和第二电极区域。 金属硅化物层设置在邻近管区的半导体衬底上。 当施加编程电压时，金属硅化物在管道区域中经历热诱导的相变。 eFuse具有改进的可靠性，可以用相对较低的电压进行编程。
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公开(公告)号：US20090128224A1
公开(公告)日：2009-05-21
申请号：US12266266
申请日：2008-11-06
申请人： Yoshiaki Toyoshima
发明人： Yoshiaki Toyoshima
IPC分类号： H03K17/78
CPC分类号： H01L27/14609 , H04N5/357
摘要： A semiconductor device includes a light-receiving element which is connected to a negative power supply and generates conductive carriers by receiving light, an amplifier transistor which is a depletion transistor and amplifies an electrical signal obtained by the conductive carriers, and a transfer gate transistor which is a depletion transistor and is controlled by a negative potential applied to a gate to electrically connect or disconnect the light-receiving element and the amplifier transistor.
摘要翻译： 一种半导体器件包括：受光元件，其连接到负电源并通过接收光产生导电载体;放大器晶体管，其是耗尽晶体管，并放大由导电载体获得的电信号;以及传输栅极晶体管， 是耗尽晶体管，并且由施加到栅极的负电位控制以电连接或断开光接收元件和放大器晶体管。
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公开(公告)号：US07189148B2
公开(公告)日：2007-03-13
申请号：US11284652
申请日：2005-11-22
IPC分类号： B24B1/00
CPC分类号： B24B49/00 , B24B13/005 , B24B13/0052 , B24B13/01 , B24B13/012 , B24B13/02
摘要： A polishing apparatus includes a polishing jig. The polishing jig includes an elastic balloon member, a fixture, and a fluid supply portion. The fixture airtightly closes the rear opening portion of the balloon member. The fluid supply portion supplies a fluid into a space formed by the fixture and balloon member. The balloon member has a cup shape constructed by a dome portion and a cylinder portion extending backward from the outer periphery of the dome portion. The fixture fixes the opening portion of the cylinder portion of the balloon member.
摘要翻译： 抛光装置包括抛光夹具。 抛光夹具包括弹性球囊构件，夹具和流体供应部。 夹具气密地封闭气囊构件的后开口部分。 流体供应部分将流体供应到由固定装置和气囊构件形成的空间中。 球囊构件具有由圆顶部和从圆顶部的外周向后延伸的圆筒部构成的杯状。 夹具固定球囊构件的气缸部分的开口部分。
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公开(公告)号：US07144305B2
公开(公告)日：2006-12-05
申请号：US11150089
申请日：2005-06-09
IPC分类号： B24B1/00
CPC分类号： B24B49/00 , B24B13/005 , B24B13/0052 , B24B13/01 , B24B13/012 , B24B13/02
摘要： A polishing apparatus includes a polishing jig. The polishing jig includes an elastic balloon member, a fixture, and a fluid supply portion. The fixture airtightly closes the rear opening portion of the balloon member. The fluid supply portion supplies a fluid into a space formed by the fixture and balloon member. The balloon member has a cup shape constructed by a dome portion and a cylinder portion extending backward from the outer periphery of the dome portion. The fixture fixes the opening portion of the cylinder portion of the balloon member.
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6.发明授权Programmable element programmed by changes in resistance due to phase transition 有权通过相变导致的电阻变化编程的可编程元件公开(公告)号：US06703680B2
公开(公告)日：2004-03-09
申请号：US10029718
申请日：2001-12-31
申请人： Yoshiaki Toyoshima
发明人： Yoshiaki Toyoshima
IPC分类号： H01L2900
CPC分类号： H01L23/5256 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要： A programmable element includes a resistive element having a polysilicon film and a metal silicide film or metal film stacked on the polysilicon film. The electric resistance of the resistive element is changed by changing the composition of the metal silicide film or metal film or the chemical bond state using heat, thereby programming on the basis of the change in the electric resistance of the resistor.
摘要翻译： 可编程元件包括具有堆叠在多晶硅膜上的多晶硅膜和金属硅化物膜或金属膜的电阻元件。 通过使用热改变金属硅化物膜或金属膜的组成或化学键合状态来改变电阻元件的电阻，从而基于电阻器的电阻的变化进行编程。
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公开(公告)号：US5241207A
公开(公告)日：1993-08-31
申请号：US878418
申请日：1992-05-04
IPC分类号： H01L21/28 , H01L21/336 , H01L21/768 , H01L21/8238 , H01L23/522 , H01L23/528 , H01L23/532 , H01L27/092 , H01L29/78
CPC分类号： H01L21/76895 , H01L23/5286 , H01L23/53271 , H01L2924/0002
摘要： A semiconductor device comprises an element separating insulation film formed on a main surface of a silicon substrate, an insulation film formed to project from the edge portion of the element separating insulation film onto a part of a silicon region of the substrate and having a thickness smaller than the thickness of the element separating insulation film, a first metal silicide film formed to cover the element separating insulation film and the thin insulation film in the vicinity of the edge portion of the element separating insulation film, a second metal silicide film formed on the silicon region in the vicinity of the thin insulation film, and a third metal silicide film formed in the vicinity of the tip portion of the thin insulation film for connecting the first and and second metal silicide films.
摘要翻译： 半导体器件包括形成在硅衬底的主表面上的元件分离绝缘膜，形成为从元件分离绝缘膜的边缘部分突出到衬底的硅区域的一部分上并具有较小厚度的绝缘膜 除了元件分离绝缘膜的厚度之外，形成为覆盖元件分离绝缘膜的第一金属硅化物膜和在元件分离绝缘膜的边缘部分附近的薄绝缘膜，形成在第二金属硅化物膜上的第二金属硅化物膜 硅区域，以及形成在薄绝缘膜的前端附近的用于连接第一和第二金属硅化物膜的第三金属硅化物膜。
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公开(公告)号：US20080290456A1
公开(公告)日：2008-11-27
申请号：US11753837
申请日：2007-05-25
CPC分类号： H01L27/115 , H01L21/84 , H01L23/5252 , H01L23/5256 , H01L27/0617 , H01L27/105 , H01L27/11206 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse (eFuse) has a gate prepared from a conductive or partially conductive material such as polysilicon, a semiconductor substrate having a pipe region in proximity to the gate, and first and second electrode regions adjacent the pipe region. A metal silicide layer is provided on the semiconductor substrate adjacent the pipe region. When a programming voltage is applied, the metal silicide undergoes a thermally induced phase transition in the pipe region. The eFuse has improved reliability and can be programmed with relatively low voltages.
摘要翻译： 电熔丝（eFuse）具有由诸如多晶硅的导电或部分导电材料制备的栅极，具有靠近栅极的管区域的半导体衬底以及与管道区域相邻的第一和第二电极区域。 金属硅化物层设置在邻近管区的半导体衬底上。 当施加编程电压时，金属硅化物在管道区域中经历热诱导的相变。 eFuse具有改进的可靠性，可以用相对较低的电压进行编程。
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公开(公告)号：US20060073770A1
公开(公告)日：2006-04-06
申请号：US11284652
申请日：2005-11-22
IPC分类号： B24B7/30
CPC分类号： B24B49/00 , B24B13/005 , B24B13/0052 , B24B13/01 , B24B13/012 , B24B13/02
摘要： A polishing apparatus includes a polishing jig. The polishing jig includes an elastic balloon member, a fixture, and a fluid supply portion. The fixture airtightly closes the rear opening portion of the balloon member. The fluid supply portion supplies a fluid into a space formed by the fixture and balloon member. The balloon member has a cup shape constructed by a dome portion and a cylinder portion extending backward from the outer periphery of the dome portion. The fixture fixes the opening portion of the cylinder portion of the balloon member.
摘要翻译： 抛光装置包括抛光夹具。 抛光夹具包括弹性球囊构件，夹具和流体供应部。 夹具气密地封闭气囊构件的后开口部分。 流体供应部分将流体供应到由固定装置和气囊构件形成的空间中。 球囊构件具有由圆顶部和从圆顶部的外周向后延伸的圆筒部构成的杯状。 夹具固定球囊构件的气缸部分的开口部分。
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10.发明授权Semiconductor devices which have analog and digital circuits integrated on a common substrate 失效具有集成在公共基板上的模拟和数字电路的半导体器件公开(公告)号：US06459134B2
公开(公告)日：2002-10-01
申请号：US09818041
申请日：2001-03-27
申请人： Tatsuya Ohguro , Yoshiaki Toyoshima
发明人： Tatsuya Ohguro , Yoshiaki Toyoshima
IPC分类号： H01L2900
CPC分类号： H01L21/823878 , H01L21/761
摘要： A semiconductor device with digital and analog circuits has a structure for preventing noise penetration from the digital circuit to the analog circuit. The semiconductor device has a semiconductor substrate, first and second wells independently formed at a surface of the semiconductor substrate, the digital circuit formed at a surface of the first well, and the analog circuit formed at a surface of the second well. The specific resistance of the semiconductor substrate is at least 1000 times as large as the specific resistance of the first well. A conductive guard-ring may be formed in the surface of an area that is between the digital circuit and the second well or between the first well and the second well.
摘要翻译： 具有数字和模拟电路的半导体器件具有防止数字电路到模拟电路的噪声穿透的结构。 半导体器件具有半导体衬底，第一和第二阱独立地形成在半导体衬底的表面，形成在第一阱的表面处的数字电路和形成在第二阱的表面处的模拟电路。 半导体衬底的比电阻是第一阱的电阻率的至少1000倍。 可以在数字电路和第二阱之间或第一阱和第二阱之间的区域的表面中形成导电保护环。
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