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    Field effect transistor
    3.
    发明申请
    Field effect transistor 有权
    场效应晶体管

    公开(公告)号：US20050145995A1

    公开(公告)日：2005-07-07

    申请号：US11045157

    申请日：2005-01-31

    申请人： Masahiro Kobashi ,  Keishin Handa ,  Shinji Aramaki ,  Yoshimasa Sakai

    发明人： Masahiro Kobashi ,  Keishin Handa ,  Shinji Aramaki ,  Yoshimasa Sakai

    IPC分类号： H01L21/336 ,  H01L27/108 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

    CPC分类号： H01L51/0097 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

    摘要： The mechanical characteristics of the support substrate and the insulation layer of an organic field effect transistor are optimized to thereby attain a high mobility, a high on-current and a low leak current, and a high on/off ratio in the organic field effect transistor. A field effect transistor comprising, as provided on a support substrate 1, an insulation layer 3, a gate electrode 2 and an organic semiconductor layer 4 separated by the insulation layer, a source electrode 5 and a drain electrode 6 provided so as to contact the organic semiconductor layer 4, wherein elongation ε1 (%) at the yield point of the insulation layer is larger than elongation ε2 (%) at the yield point of the support substrate. It has good flexible characteristics, whereby cracking, etc. due to a stress exerted will be suppressed, and a leak current will thereby be reduced, and thus, a high mobility, a high on-current and a low leak current, and a high on/off ratio can be attained.

    摘要翻译： 有机场效应晶体管的支撑基板和绝缘层的机械特性被优化，从而获得有机场效应晶体管中的高迁移率，高导通电流和低漏电流以及高导通/截止比 。 一种场效应晶体管，其包括设置在支撑基板1上的由绝缘层分离的绝缘层3，栅极电极2和有机半导体层4，源电极5和漏电极6，以与 有机半导体层4，其中在绝缘层的屈服点处的伸长率ε1（％）大于在支撑基板的屈服点处的伸长率ε2（％）。 具有良好的柔性特性，由于施加的应力而产生的开裂等被抑制，因此漏电流将被降低，因此高迁移率，高导通电流和低漏电流以及高 开/关比可以达到。

    FIELD-EFFECT TRANSISTOR, PROCESSES FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE USING THE SAME
    4.
    发明申请
    FIELD-EFFECT TRANSISTOR, PROCESSES FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE USING THE SAME 有权
    场效应晶体管，其制造方法以及使用其的电子器件

    公开(公告)号：US20120086008A1

    公开(公告)日：2012-04-12

    申请号：US13269205

    申请日：2011-10-07

    申请人： Yosuke OSEKI ,  Yoshimasa SAKAI ,  Akira OHNO

    发明人： Yosuke OSEKI ,  Yoshimasa SAKAI ,  Akira OHNO

    IPC分类号： H01L29/786 ,  H01L21/20

    CPC分类号： H01L29/41725 ,  H01L29/78 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0545 ,  H01L51/105

    摘要： Provided is a field-effect transistor which has a high mobility and a low variation of mobility.A field-effect transistor at least comprising a substrate, a semiconductor layer, a source electrode, and a drain electrode is produced by forming the source electrode and/or the drain electrode so that the source electrode and/or the drain electrode has a taper shape in a cross-section which is parallel with a channel length direction and perpendicular to the substrate, and forming the semiconductor layer through coating process.

    摘要翻译： 提供了具有高移动性和低迁移率变化的场效应晶体管。 通过形成源电极和/或漏电极，使源电极和/或漏电极具有锥度的方式制造至少包括衬底，半导体层，源电极和漏电极的场效应晶体管 形成与沟道长度方向平行且垂直于衬底的横截面，以及通过涂覆工艺形成半导体层。

    Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol
    6.
    发明授权
    Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol 有权
    绝缘层，电子器件，场效应晶体管和聚乙烯基苯硫酚

    公开(公告)号：US08207524B2

    公开(公告)日：2012-06-26

    申请号：US12376123

    申请日：2007-08-02

    申请人： Shinji Aramaki ,  Yoshimasa Sakai

    发明人： Shinji Aramaki ,  Yoshimasa Sakai

    IPC分类号： H01L51/00

    CPC分类号： H01L51/052 ,  C08F212/14 ,  H01L51/0541 ,  H01L51/0545 ,  C08F220/30

    摘要： Provided is an insulating layer that can improve device characteristics of an electronic device including the insulating layer. The insulating layer contains a polymer insulating substance having repeating units represented by the following formula: wherein Ra represents a direct bond or any linking group, Ar represents a divalent aromatic group optionally having a substituent, and Rb represents a hydrogen atom, a fluorine atom, or a univalent organic group.

    摘要翻译： 提供了可以提高包括绝缘层的电子器件的器件特性的绝缘层。 绝缘层包含具有下式表示的重复单元的聚合物绝缘物质：其中Ra表示直接键或任意连接基，Ar表示任选具有取代基的二价芳基，Rb表示氢原子，氟原子， 或一价有机基团。

    ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC FIELD EFFECT TRANSISTOR
    8.
    发明申请
    ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC FIELD EFFECT TRANSISTOR 审中-公开
    有机半导体材料和有机场效应晶体管

    公开(公告)号：US20090159876A1

    公开(公告)日：2009-06-25

    申请号：US12067520

    申请日：2006-09-20

    申请人： Yoshihiro Ohba ,  Kazuaki Sato ,  Yoshimasa Sakai ,  Shinji Aramaki

    发明人： Yoshihiro Ohba ,  Kazuaki Sato ,  Yoshimasa Sakai ,  Shinji Aramaki

    IPC分类号： H01L51/30 ,  C07D333/28 ,  C07D409/14

    CPC分类号： H01L51/0036 ,  H01L51/0067 ,  H01L51/0541 ,  H01L51/0545

    摘要： Disclosed is an adequately stable organic semiconductor material which can be used in a coating process while having high regularity and crystallinity. For obtaining such an organic semiconductor material, there is used a compound wherein 6-20 five-membered and/or six-membered aromatic rings are bound. This compound contains a partial structure represented by the formula (1) below, while having a mobility of not less than 1.0×10−3 cm2/Vs and an ionization potential in the solid state of not less than 4.8 eV and not more than 5.6 eV. (1) In the formula, R1 and R2 independently represent a hydrogen atom or a monovalent organic group. In this connection, at least one of R1 and R2 is an optionally substituted aromatic group.

    摘要翻译： 公开了一种能够在涂布过程中使用而具有高规则性和结晶度的足够稳定的有机半导体材料。 为了获得这样的有机半导体材料，使用其中结合6-20个五元和/或六元芳环的化合物。 该化合物包含由下式（1）表示的部分结构，其迁移率不低于1.0×10 -3 cm 2 / Vs，固态电离电位不小于4.8eV且不大于5.6eV 。 （1）式中，R 1和R 2分别表示氢原子或1价的有机基团。 在这方面，R 1和R 2中的至少一个是任选取代的芳族基团。

    INSULATING LAYER, ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND POLYVINYLTHIOPHENOL
    9.
    发明申请
    INSULATING LAYER, ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND POLYVINYLTHIOPHENOL 有权
    绝缘层，电子器件，场效应晶体管和聚乙烯二醇

    公开(公告)号：US20100001264A1

    公开(公告)日：2010-01-07

    申请号：US12376123

    申请日：2007-08-02

    申请人： Shinji Aramaki ,  Yoshimasa Sakai

    发明人： Shinji Aramaki ,  Yoshimasa Sakai

    IPC分类号： H01L51/30 ,  C08F12/30

    CPC分类号： H01L51/052 ,  C08F212/14 ,  H01L51/0541 ,  H01L51/0545 ,  C08F220/30

    摘要： Provided is an insulating layer that can improve device characteristics of an electronic device including the insulating layer. The insulating layer contains a polymer insulating substance having repeating units represented by the following formula: wherein Ra represents a direct bond or any linking group, Ar represents a divalent aromatic group optionally having a substituent, and Rb represents a hydrogen atom, a fluorine atom, or a univalent organic group.

    摘要翻译： 提供了可以提高包括绝缘层的电子器件的器件特性的绝缘层。 绝缘层包含具有下式表示的重复单元的聚合物绝缘物质：其中Ra表示直接键或任意连接基，Ar表示任选具有取代基的二价芳基，Rb表示氢原子，氟原子， 或一价有机基团。