公开(公告)号：US5723371A

公开(公告)日：1998-03-03

申请号：US517878

申请日：1995-08-23

申请人： Young-Kap Seo ,  Chi-Woo Kim ,  Ho-Chul Kang

发明人： Young-Kap Seo ,  Chi-Woo Kim ,  Ho-Chul Kang

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/66765 ,  H01L21/31138 ,  H01L21/32135 ,  H01L29/78669 ,  Y10S438/906 ,  Y10S438/978

摘要： A method for fabricating a thin film transistor having a taper-etched semiconductor film includes the steps of forming a gate electrode on a bare substrate; forming an insulating film on the gate electrode;p forming a semiconductor film by forming an amorphous silicon film layer on the insulating film and forming an N.sup.+ amorphous silicon film on the amorphous silicon film layer, descumming photoresist residue from the semiconductor film by using a specified gas and taper etching a part of the semiconductor film, which is uncoated with the photoresist, by using HCl and SF.sub.6, to form a gentle slope in the etching profile resulting from overetching.

摘要翻译： 一种用于制造具有锥形蚀刻半导体膜的薄膜晶体管的方法包括在裸衬底上形成栅电极的步骤; 在所述栅电极上形成绝缘膜; p通过在所述绝缘膜上形成非晶硅膜层而形成半导体膜，并在所述非晶硅膜层上形成N +非晶硅膜，通过使用规定的所述半导体膜从所述半导体膜除去光刻胶残渣 气体和锥度蚀刻通过使用HCl和SF6在光刻胶中未涂覆的半导体膜的一部分，以在由过蚀刻产生的蚀刻轮廓中形成平缓的斜率。