Method of manufacturing liquid crystal display device

    公开(公告)号:US08461054B2

    公开(公告)日:2013-06-11

    申请号:US12285509

    申请日:2008-10-07

    IPC分类号: H01L21/302 H01L21/461

    摘要: A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.

    Method of manufacturing liquid crystal display device
    2.
    发明授权
    Method of manufacturing liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号:US08153462B2

    公开(公告)日:2012-04-10

    申请号:US12568824

    申请日:2009-09-29

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.

    摘要翻译: 提供一种制造液晶显示装置的方法,其包括灰化第一和第二光致抗蚀剂图案,由此在数据线和暴露在灰化的第一和第二光致抗蚀剂图案之间的源极 - 漏极图案的部分处形成氧化铜膜, 第一光致抗蚀剂图案的灰色第一和第二部分; 脱氧或除去氧化铜膜; 执行等离子体处理以将数据线和源极 - 漏极图案的暴露部分改变为铜化合物; 使用铜化合物去除溶液除去铜化合物,以分别在灰化的第一和第二部分之下形成源极和漏极,其中铜化合物除去溶液基本上与铜基材料没有反应; 使用源极和漏极作为蚀刻掩模来干蚀刻源极和漏极之间的欧姆接触层的一部分,该欧姆接触层通过图案化掺杂杂质的非晶硅层而形成。

    METHOD FOR CONSTRUCTION OF WASTE LANDFILLS
    3.
    发明申请
    METHOD FOR CONSTRUCTION OF WASTE LANDFILLS 审中-公开
    废弃土地建设方法

    公开(公告)号:US20100040416A1

    公开(公告)日:2010-02-18

    申请号:US12442707

    申请日:2007-06-27

    申请人: Young Kwon Kang

    发明人: Young Kwon Kang

    IPC分类号: B09B1/00

    CPC分类号: E02D31/002 B09B1/00

    摘要: A method of constructing a waste landfill includes a waste reclamation site construction step, an air dome installation step of covering the top of the waste reclamation site with an air dome, a partial waste stacking step of partially stacking waste in the waste reclamation site, an air dome supporting structure installation step, a reclamation step of fully filling waste into the waste reclamation site and covering the waste reclamation site with earth, a new waste reclamation site construction step of constructing a new waste reclamation site, and an air dome transfer step of transferring the air dome. The new waste reclamation site construction step and the air dome transfer step are repeatedly carried out to continuously fill waste into the waste reclamation sites and to maximize the waste reclamation sites, thereby improving the utilizeability of the waste landfill.

    摘要翻译: 垃圾填埋场的构建方法包括:废弃物回收场所施工步骤,用空气穹顶覆盖废弃物回收场所顶部的空气穹顶安装步骤,在废物回收场地部分堆放废物的部分废物堆放步骤, 空气穹顶支撑结构安装步骤,将填埋废物完全填埋到废物回收场地并覆盖废弃物回填现场的填海工程,建设新的废物回收场所的新的废物回收现场施工步骤,以及空气穹顶转移步骤 转移空气穹顶。 反复进行新的废物回收工地施工步骤和空气穹顶转移步骤,以不断填埋废物回收场地,最大限度地发挥废弃物回收点,从而提高垃圾填埋场的可利用性。

    Method of manufacturing liquid crystal display device
    4.
    发明申请
    Method of manufacturing liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号:US20090104724A1

    公开(公告)日:2009-04-23

    申请号:US12285509

    申请日:2008-10-07

    IPC分类号: G02F1/1333

    摘要: A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.

    摘要翻译: 一种制造液晶显示装置的方法,该液晶显示装置包括在基板上限定的每个像素中交替布置的像素电极和公共电极,包括以下步骤:在基板上形成导电膜; 在导电层上形成蚀刻选择比不同于导电层的掩模层; 在掩模层上形成固定图案的光刻胶图案; 通过使用光刻胶图案作为蚀刻掩模蚀刻掩模层,形成具有底切形状的光刻胶图案的掩模图案; 去除光刻胶图案; 并且通过使用掩模图案作为蚀刻掩模蚀刻导电膜,以提供公共电极和像素电极中的至少任一个。

    METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE
    6.
    发明申请
    METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE 有权
    制造液晶显示装置的方法

    公开(公告)号:US20100099205A1

    公开(公告)日:2010-04-22

    申请号:US12568824

    申请日:2009-09-29

    IPC分类号: H01L33/00

    摘要: A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.

    摘要翻译: 提供了一种制造液晶显示装置的方法,其包括灰化第一和第二光致抗蚀剂图案,由此在数据线和暴露在灰化的第一和第二光致抗蚀剂图案之间的源极 - 漏极图案的部分处形成氧化铜膜, 第一光致抗蚀剂图案的灰色第一和第二部分; 脱氧或除去氧化铜膜; 执行等离子体处理以将数据线和源极 - 漏极图案的暴露部分改变为铜化合物; 使用铜化合物去除溶液除去铜化合物,以分别在灰化的第一和第二部分之下形成源极和漏极,其中铜化合物除去溶液基本上与铜基材料没有反应; 使用源极和漏极作为蚀刻掩模来干蚀刻源极和漏极之间的欧姆接触层的一部分,该欧姆接触层通过图案化掺杂杂质的非晶硅层而形成。

    Method for fabricating thin film transistor substrate
    8.
    发明授权
    Method for fabricating thin film transistor substrate 有权
    制造薄膜晶体管基板的方法

    公开(公告)号:US07977171B2

    公开(公告)日:2011-07-12

    申请号:US11808979

    申请日:2007-06-14

    IPC分类号: H01L21/84

    摘要: A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area, a gate pattern is formed at the exterior of the display area. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.

    摘要翻译: 公开了一种制造薄膜晶体管衬底以减少掩模工艺的方法,并且同时通过接触孔填充工艺去除留在非显示区域的透明电极ITO。 在制造具有显示区域和非显示区域的薄膜晶体管基板的方法中,在显示区域的外部形成栅极图案。 在具有栅极图案的基板上形成栅极绝缘膜,然后形成数据图案。 并且在设置有数据图案的整个基板上形成保护膜,然后形成导电图案,然后形成由形成在显示区域的像素电极和下部栅极焊盘电极构成的导电图案,以及 形成在非显示区域的下部数据焊盘电极。

    EXPOSING DEVICE, METHODS FOR FORMING PATTERN, CHANNEL, AND HOLE BY USING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE THEREWITH AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    EXPOSING DEVICE, METHODS FOR FORMING PATTERN, CHANNEL, AND HOLE BY USING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE THEREWITH AND METHOD FOR FABRICATING THE SAME 有权
    曝光装置,通过使用它们形成图案,通道和孔的方法和液晶显示装置及其制造方法

    公开(公告)号:US20090109364A1

    公开(公告)日:2009-04-30

    申请号:US12256840

    申请日:2008-10-23

    摘要: The present invention relates to an exposing device which can form a micron pattern even with an exposing device having a low resolving power by changing a mask pattern, methods for forming a pattern, a channel, and a hole respectively, and a liquid crystal display device therewith and a method for fabricating the same. A method for forming a pattern includes the steps of forming a thin film on a substrate, coating a photoresist film on the thin film, aligning a mask over the photoresist film, the mask formed on a base material, including a light shielding portion having a linear supporting portion and an uneven portion at a boundary of the supporting portion, and a transmission portion defined at regions excluding the light shielding portion, exposing the photoresist film with the mask thereon to a UV beam of a wavelength greater than 300 nm to cause refraction in the vicinity of the uneven portion, and developing the photoresist film exposed thus to form a photoresist film pattern, and patterning the thin film by using the photoresist film pattern thus formed.

    摘要翻译: 本发明涉及即使通过改变掩模图案具有低分辨率的曝光装置,也可分别形成图案,通道和孔的方法,以及液晶显示装置,能够形成微米图案的曝光装置 及其制造方法。 形成图案的方法包括以下步骤:在基板上形成薄膜,在薄膜上涂覆光致抗蚀剂膜,在光致抗蚀剂膜上对准掩模,形成在基材上的掩模,包括具有 线性支撑部分和在支撑部分的边界处的不平坦部分,以及限定在除了遮光部分之外的区域的透射部分,使其上具有掩模的光致抗蚀剂膜暴露于波长大于300nm的UV光束以引起折射 在不平坦部分附近,并且使曝光的光致抗蚀剂膜显影以形成光致抗蚀剂图案,并且通过使用由此形成的光致抗蚀剂膜图案来图案化薄膜。

    Method for fabricating thin film transistor substrate
    10.
    发明申请
    Method for fabricating thin film transistor substrate 有权
    制造薄膜晶体管基板的方法

    公开(公告)号:US20080003723A1

    公开(公告)日:2008-01-03

    申请号:US11808979

    申请日:2007-06-14

    IPC分类号: H01L21/77

    摘要: A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area where is located at the exterior of the display area, a gate pattern, which is comprised of a gate line which is formed at a display area, a gate electrode which is connected to a gate line, a gate link which is formed at a non-display area, and a lower gate pad electrode which is connected, via a gate link, to a gate line, is formed. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern, which is comprised of a data line which is formed at a display area and is crossed with a gate line, a source electrode and a drain electrode which are connected to a data line, a data link which is formed at a non-display area, and a lower data pad electrode which is connected, via a data link, to a data line, is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area by a contact hole filling process using a smoothing material, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.

    摘要翻译: 公开了一种制造薄膜晶体管衬底以减少掩模工艺的方法,并且同时通过接触孔填充工艺去除留在非显示区域的透明电极ITO。 在制造具有位于显示区域的外部的显示区域和非显示区域的薄膜晶体管基板的方法中,由形成在显示区域的栅极线构成的栅极图案, 形成连接到栅极线的栅极电极,形成在非显示区域的栅极连接,以及经由栅极连接到栅极线的下部栅极焊盘电极。 栅极绝缘膜形成在设置有栅极图案的基板上,然后形成数据图案,其由形成在显示区域并与栅极线交叉的数据线,源极和漏极 形成与数据线连接的数据线,形成在非显示区的数据链路,以及经由数据链路连接到数据线的下部数据焊盘电极。 并且在设置有数据图案的整个基板上形成保护膜,然后由通过使用平滑材料的接触孔填充处理形成在显示区域处的像素电极和下部的导电图案形成导电图案 形成在非显示区域形成的栅极焊盘电极和下部数据焊盘电极。