摘要:
A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.
摘要:
A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.
摘要:
A method of constructing a waste landfill includes a waste reclamation site construction step, an air dome installation step of covering the top of the waste reclamation site with an air dome, a partial waste stacking step of partially stacking waste in the waste reclamation site, an air dome supporting structure installation step, a reclamation step of fully filling waste into the waste reclamation site and covering the waste reclamation site with earth, a new waste reclamation site construction step of constructing a new waste reclamation site, and an air dome transfer step of transferring the air dome. The new waste reclamation site construction step and the air dome transfer step are repeatedly carried out to continuously fill waste into the waste reclamation sites and to maximize the waste reclamation sites, thereby improving the utilizeability of the waste landfill.
摘要:
A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.
摘要:
The present invention relates a method for forming a pattern includes the steps of forming a thin film on a substrate, coating a photoresist film on the thin film, aligning a mask over the photoresist film, the mask formed on a base material, including a light shielding portion having a linear supporting portion and an uneven portion at a boundary of the supporting portion, and a transmission portion defined at regions excluding the light shielding portion, exposing the photoresist film with the mask thereon to a UV beam of a wavelength greater than 300nm to cause refraction in the vicinity of the uneven portion, and developing the photoresist film exposed thus to form a photoresist film pattern, and patterning the thin film by using the photoresist film pattern thus formed.
摘要:
A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.
摘要:
Provided is a light illuminating unit for emitting partially polarized light having an anisotropic illuminance distribution onto a polarizing device. The light illuminating unit includes: a light generator to emit light having an anisotropic illuminance distribution; and a polarizing device to receive light from the light generator.
摘要:
A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area, a gate pattern is formed at the exterior of the display area. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.
摘要:
The present invention relates to an exposing device which can form a micron pattern even with an exposing device having a low resolving power by changing a mask pattern, methods for forming a pattern, a channel, and a hole respectively, and a liquid crystal display device therewith and a method for fabricating the same. A method for forming a pattern includes the steps of forming a thin film on a substrate, coating a photoresist film on the thin film, aligning a mask over the photoresist film, the mask formed on a base material, including a light shielding portion having a linear supporting portion and an uneven portion at a boundary of the supporting portion, and a transmission portion defined at regions excluding the light shielding portion, exposing the photoresist film with the mask thereon to a UV beam of a wavelength greater than 300 nm to cause refraction in the vicinity of the uneven portion, and developing the photoresist film exposed thus to form a photoresist film pattern, and patterning the thin film by using the photoresist film pattern thus formed.
摘要:
A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area where is located at the exterior of the display area, a gate pattern, which is comprised of a gate line which is formed at a display area, a gate electrode which is connected to a gate line, a gate link which is formed at a non-display area, and a lower gate pad electrode which is connected, via a gate link, to a gate line, is formed. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern, which is comprised of a data line which is formed at a display area and is crossed with a gate line, a source electrode and a drain electrode which are connected to a data line, a data link which is formed at a non-display area, and a lower data pad electrode which is connected, via a data link, to a data line, is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area by a contact hole filling process using a smoothing material, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.