公开(公告)号：US5965005A

公开(公告)日：1999-10-12

申请号：US934837

申请日：1997-09-22

申请人： Ming-Kwei Lee ,  Yu-Hsiung Wang

发明人： Ming-Kwei Lee ,  Yu-Hsiung Wang

IPC分类号： C25F3/14 ,  H01L21/308 ,  C25F3/00

CPC分类号： C25F3/14 ,  H01L21/308

摘要： The present invention provides a method for forming porous silicon, which includes the steps of: a) providing a silicon substrate; b) growing a GaAs layer on the silicon substrate; c) defining a pattern for the GaAs layer by a photolithography process and etching the patterned GaAs layer to obtain a GaAs mask; and d) forming a porous silicon layer by anodic-oxidation-etching the silicon substrate uncovered by the GaAs mask. By this method, etching under the GaAs layer on the silicon substrate can be executed very well to form the porous silicon. And the patterned GaAs layer is etched by a process in step c), which is selected from a wet etching and a dry etching process with a photoresist as a mask. In addition, the anodic-oxidation-etching process in step d) is an electrolytic process executed in HF acidic solution which is a mixture of 30 vol. % HF and 70 vol. % H.sub.2 O, in which the HF concentration is 49 wt. %.

摘要翻译： 本发明提供一种形成多孔硅的方法，其包括以下步骤：a）提供硅衬底; b）在硅衬底上生长GaAs层; c）通过光刻工艺定义GaAs层的图案并蚀刻图案化的GaAs层以获得GaAs掩模; 以及d）通过阳极氧化蚀刻由GaAs掩模未覆盖的硅衬底形成多孔硅层。 通过这种方法，可以非常好地执行在硅衬底上的GaAs层下的蚀刻以形成多孔硅。 并且通过步骤c）中的工艺蚀刻图案化的GaAs层，该方法选自湿蚀刻和以光致抗蚀剂作为掩模的干蚀刻工艺。 此外，步骤d）中的阳极氧化蚀刻工艺是在HF酸性溶液中进行的电解方法，其为30体积％ ％HF和70体积％ ％H 2 O，其中HF浓度为49wt。 ％。

公开(公告)号：US08124494B2

公开(公告)日：2012-02-28

申请号：US11778558

申请日：2007-07-16

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L21/76

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

摘要翻译： 提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。 在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。 本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。

公开(公告)号：US20090023255A1

公开(公告)日：2009-01-22

申请号：US11778558

申请日：2007-07-16

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L21/336

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

摘要翻译： 提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。 在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。 本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。

公开(公告)号：US08951864B2

公开(公告)日：2015-02-10

申请号：US13371755

申请日：2012-02-13

申请人： Yu-Hsiung Wang ,  Chih-Ren Hsieh ,  Tung-Sheng Hsiao

发明人： Yu-Hsiung Wang ,  Chih-Ren Hsieh ,  Tung-Sheng Hsiao

IPC分类号： H01L21/336 ,  H01L27/115

CPC分类号： H01L21/28273 ,  H01L27/11524

摘要： A semiconductor device includes a substrate; a storage element disposed over the substrate in a first region; a control gate disposed over the storage element; a high-k dielectric layer disposed on the substrate in a second region adjacent the first region; and a metal select gate disposed over the high-k dielectric layer and adjacent to the storage element and the control gate.

摘要翻译： 半导体器件包括衬底; 在第一区域中设置在所述基板上的存储元件; 设置在所述存储元件上的控制门; 位于与所述第一区域相邻的第二区域中的所述基板上的高k电介质层; 以及设置在高k电介质层上并且与存储元件和控制栅极相邻的金属选择栅极。

公开(公告)号：US20130207174A1

公开(公告)日：2013-08-15

申请号：US13371755

申请日：2012-02-13

申请人： Yu-Hsiung Wang ,  Chih-Ren Hsieh ,  Tung-Sheng Hsiao

发明人： Yu-Hsiung Wang ,  Chih-Ren Hsieh ,  Tung-Sheng Hsiao

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L21/28273 ,  H01L27/11524

摘要： A semiconductor device includes a substrate; a storage element disposed over the substrate in a first region; a control gate disposed over the storage element; a high-k dielectric layer disposed on the substrate in a second region adjacent the first region; and a metal select gate disposed over the high-k dielectric layer and adjacent to the storage element and the control gate.

摘要翻译： 半导体器件包括衬底; 在第一区域中设置在所述基板上的存储元件; 设置在所述存储元件上的控制门; 位于与所述第一区域相邻的第二区域中的所述基板上的高k电介质层; 以及设置在高k电介质层上并且与存储元件和控制栅极相邻的金属选择栅极。

公开(公告)号：US08253206B2

公开(公告)日：2012-08-28

申请号：US13221654

申请日：2011-08-30

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L21/70

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

公开(公告)号：US20110309417A1

公开(公告)日：2011-12-22

申请号：US13221654

申请日：2011-08-30

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

摘要翻译： 提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。 在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。 本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。