摘要:
A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.
摘要:
A method for preparing a barium fluorotitanate (BaTiF6) powder and depositing a barium titanate (BaTiO3) thin film on a silicon wafer is disclosed. The method includes steps of a) producing a barium fluorotitanate powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitanate powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.
摘要:
A high gain and low leakage current porous silicon metal-semiconductor-metal planar photodetector was fabricated through rapid thermal oxidation (RTO) and rapid thermal annealing (RTA). A high responsivity of 2.15 A/W can be obtained under a 0.85 mW 675 nm laser diode illumination. The gain is 400%. It shows high potential as a device applied in optoelectronics and optoelectronic integrated circuits.
摘要:
LPD (Liquid Phase Oxide Deposition) technology is a newly developed approach to deposit SiO.sub.2 on silicon wafers. LPD-SO.sub.2 film was deposited by immersing the wafer in hydrofluosilicic acid (H.sub.2 SiF.sub.6) solution supersaturated with silica gel at low temperature (about 40.degree. C.). LPD-SiO.sub.2, also the deformation of wafers is avoided so the method can be applied to the fabrication of integrated circuits. Moreover, this method has high potential to replace the CVD-SiO.sub.2. However, it is very hard to deposit LPD-SiO.sub.2 on very clean silicon wafer (e.g., without any oxide) because of no nucleation seed. In this study, the LPD-SiO.sub.2 was deposited on silicon wafer with a plasma-enhanced chemical vapor deposition oxide, a thermal oxide, an atmospheric pressure chemical vapor deposition oxide, and a nitric acid pretreatment oxide. The nitric acid pretreatment enhances the LPD-SiO.sub.2 growth rate and reduce the stress in the LPD-SiO.sub.2 film. In addition, it has a smaller dielectric constant and it can reduce the parasitic capacitance in integrated circuits.
摘要:
A method for manufacturing a porous blue light emitting diode comprising the steps of preparing a silicon substrate having a back surface, applying a conducting layer on the back surface, annealing the substrate coated with the conducting layer in an inert gas atmosphere, applying an anti-corrosion layer on the conducting layer, immersing the anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of about 5% by volume, applying a voltage to the resulting layers for eroding the anti-corrosion layer-applied substrate to form a porous layer having Si wires on a top surface of the substrate, and oxidizing the porous layer for making sizes of the Si wires small enough for emitting light having a peak occuring at a wavelength shorter than about 520 nm. This method offers a simple and feasible way to fabricate a porous blue light emitting diode.
摘要:
The present invention is related to a method for manufacturing a photodetector which comprises the steps of: (a) preparing a substrate having a back surface; (b) applying a first conducting layer on the back surface; (c) annealing the substrate coated with the first conducting layer in an inert gas atmosphere; (d) applying a anti-corrosion layer on the first conducting layer; (e) immersing the anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of 5%.about.10%; (f) eroding the anti-corrosion layer-applied substrate under a current density of about 12.5.about.25 mA/cm.sup.2 for about 5.about.40 minutes to obtain a porous layer therereon; and (g) applying a thin film layer of a second conducting layer to an upper surface of the porous layer to obtain the photodetector. The present photodetector has a wider frequency band and a higher sensitivity than conventional ones and the present manufacturing method is simple and economical.
摘要:
A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.
摘要:
A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.
摘要:
A MOS device includes: a semiconductor substrate; an insulator layer formed on the semiconductor substrate, and including a fluorine-containing titanium dioxide film that has grain boundary defects passivated by fluorine; and upper and lower electrodes formed on the insulator layer and the semiconductor substrate, respectively.
摘要:
A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bottom is mounted on the first wafer-holder. Thereafter, a growth liquid is poured into the growth-liquid vessel to expose a second surface of the first wafer to the growth liquid for growing the layer on the second surface of the first wafer. Then, the, first wafer is taken out from the first wafer-holder to obtain a wafer with a layer grown only on one surface.