公开(公告)号：US20120298991A1

公开(公告)日：2012-11-29

申请号：US13570758

申请日：2012-08-09

申请人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

发明人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

IPC分类号： H01L29/20 ,  H01L29/22 ,  H01L29/161

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/66462 ,  H01L29/778

摘要： The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.

摘要翻译： 本发明提供一种形成具有氮化镓层的多层基板的方法，其中在基板上形成具有多个开口的网格层，缓冲层，具有不同铝浓度的三个氮化铝镓层和氮化镓 层在开口中的基板上依次形成。 具有不同铝浓度的三个氮化铝铝层能够释放应力，减少氮化镓层表面上的裂纹并控制内部缺陷，使得本发明提供具有较大面积，更大厚度，无裂纹的氮化镓层 并且与现有技术相比有利于形成高性能电子部件的高质量。 本发明还提供了具有氮化镓层的多层基板。

公开(公告)号：US08263425B2

公开(公告)日：2012-09-11

申请号：US12976598

申请日：2010-12-22

申请人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

发明人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

IPC分类号： H01L21/20

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/66462 ,  H01L29/778

摘要： The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.

摘要翻译： 本发明提供一种形成具有氮化镓层的多层基板的方法，其中在基板上形成具有多个开口的网格层，缓冲层，具有不同铝浓度的三个氮化铝镓层和氮化镓 层在开口中的基板上依次形成。 具有不同铝浓度的三个氮化铝铝层能够释放应力，减少氮化镓层表面上的裂纹并控制内部缺陷，使得本发明提供具有较大面积，更大厚度，无裂纹的氮化镓层 并且与现有技术相比有利于形成高性能电子部件的高质量。 本发明还提供了具有氮化镓层的多层基板。

公开(公告)号：US08536616B2

公开(公告)日：2013-09-17

申请号：US13570758

申请日：2012-08-09

申请人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

发明人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

IPC分类号： H01L33/30

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/66462 ,  H01L29/778

摘要： The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.

摘要翻译： 本发明提供一种形成具有氮化镓层的多层基板的方法，其中在基板上形成具有多个开口的网格层，缓冲层，具有不同铝浓度的三个氮化铝镓层和氮化镓 层在开口中的基板上依次形成。 具有不同铝浓度的三个氮化铝铝层能够释放应力，减少氮化镓层表面上的裂纹并控制内部缺陷，使得本发明提供具有较大面积，更大厚度，无裂纹的氮化镓层 并且与现有技术相比有利于形成高性能电子部件的高质量。 本发明还提供了具有氮化镓层的多层基板。

公开(公告)号：US20120097968A1

公开(公告)日：2012-04-26

申请号：US12976598

申请日：2010-12-22

申请人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

发明人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/66462 ,  H01L29/778

摘要： The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.