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    Gain-clamped semiconductor optical amplifier
    2.
    发明申请
    Gain-clamped semiconductor optical amplifier 失效
    增益钳位半导体光放大器

    公开(公告)号：US20110149381A1

    公开(公告)日：2011-06-23

    申请号：US10548880

    申请日：2003-12-26

    申请人： Hiroshi Hatakeyama

    发明人： Hiroshi Hatakeyama

    IPC分类号： H01S5/06

    CPC分类号： H01S5/5072 ,  H01S5/026 ,  H01S5/0655 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/4025 ,  H01S5/4068

    摘要： A gain-clamped semiconductor optical amplifier according to the present invention has a pair of DBR areas 2, 3 disposed in sandwiching relation to gain area 1 for amplifying guided light. A portion of a waveguide of gain area 1 comprises MMI waveguide 11.

    摘要翻译： 根据本发明的增益钳位半导体光放大器具有与放大引导光的增益区域1夹持的一对DBR区域2,3。 增益区域1的波导的一部分包括MMI波导11。

    SURFACE EMITTING LASER
    3.
    发明申请
    SURFACE EMITTING LASER 失效
    表面发射激光

    公开(公告)号：US20100054290A1

    公开(公告)日：2010-03-04

    申请号：US12294032

    申请日：2007-03-23

    申请人： Hiroshi Hatakeyama

    发明人： Hiroshi Hatakeyama

    IPC分类号： H01S5/187 ,  H01S5/024 ,  H01S5/20

    CPC分类号： H01S5/1835 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/2059 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176

    摘要： VCSELs with a conventional oxide-confined structure have problems to be solved for the purpose of reducing the internal stress and thermal resistance of the device. In particular, the problems should be solved in order to achieve the high reliability of the high-speed modulation-type VCSELs. A surface emitting laser according to an embodiment of the present invention comprising a single current injection opening area, which is provided in a mesa and electrically and optically isolated, wherein the laser comprises: an active layer for emitting light resulted from current injection; a first reflector and a second reflector provided so as to sandwich the active layer between the reflectors, an n electrode and a p electrode for injecting current into the active layer, an ion-implanted nonconductive high-resistance area provided so as to surround the current injection opening area, anda half cross section in which the nonconductive oxidized layer does not appear is present among radial half cross sections extending from a substantial center of the current injection opening area to an outer periphery of the surface emitting laser, which cross sections are interrupted within a region where a laser emitting light is present.

    摘要翻译： 具有常规氧化物限制结构的VCSEL具有要解决的问题，以减少器件的内部应力和热阻。 特别地，为了实现高速调制型VCSEL的高可靠性，应该解决问题。 根据本发明实施例的表面发射激光器包括单电流注入开口区域，其设置在台面中并且电和光学隔离，其中激光器包括：用于发射由电流注入产生的光的有源层; 第一反射器和第二反射器，被设置为将有源层夹在反射器之间，用于将电流注入到有源层中的n电极和ap电极，设置成围绕电流注入的离子注入非导电高电阻区域 开口面积和半导体氧化层不存在的半截面存在于从电流注入开口区域的大致中心延伸到表面发射激光器的外周的径向半截面中，该截面被中断 在存在激光发射光的区域内。

    LITHIUM SECONDARY CELL
    5.
    发明申请
    LITHIUM SECONDARY CELL 审中-公开
    锂二次细胞

    公开(公告)号：US20140023935A1

    公开(公告)日：2014-01-23

    申请号：US14009608

    申请日：2012-04-13

    申请人： Takehiro Noguchi ,  Hideaki Sasaki ,  Makiko Uehara ,  Kazuaki Matsumoto ,  Hiroshi Hatakeyama

    发明人： Takehiro Noguchi ,  Hideaki Sasaki ,  Makiko Uehara ,  Kazuaki Matsumoto ,  Hiroshi Hatakeyama

    IPC分类号： H01M10/0569 ,  H01M4/1315 ,  H01M4/133 ,  H01M10/052

    CPC分类号： H01M10/0569 ,  H01M4/131 ,  H01M4/1315 ,  H01M4/133 ,  H01M4/364 ,  H01M4/366 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/587 ,  H01M10/052 ,  H01M10/0525 ,  H01M2300/0037 ,  H01M2300/004 ,  H01M2300/0042

    摘要： Provided is a lithium secondary cell of 5V class having a positive electrode operating voltage of 4.5V or higher with respect to metallic lithium; the lithium secondary cell has high energy density, inhibits degradation of the electrolytic solution that comes in contact with the positive electrode and the negative electrode, and has particularly long cell life when used under high-temperature environments. The positive electrode contains, as the positive electrode active substance, a predetermined lithium-manganese oxide complex; the negative electrode contains, as the negative electrode active substance, graphite, of which surface is coated by low-crystallinity carbon; and the electrolytic solution contains one or more high-oxidation-potential solvents selected from propylene carbonate, butyl ene carbonate, 4-fluoro-1,3-dioxolan-2-one, and 4,5-difluoro-1,3-dioxolan-2-one within a range of 5 to 60 vol % of the solvent and one or two low-viscosity solvents selected from dimethyl carbonate and fluorinated cyclic ether.

    摘要翻译： 提供了相对于金属锂具有4.5V或更高的正电极工作电压的5V级的锂二次电池; 锂二次电池具有高能量密度，抑制与正极和负极接触的电解液的劣化，并且在高温环境下使用时具有特别长的电池寿命。 正极含有预定的锂锰氧化物络合物作为正极活性物质， 作为负极活性物质，负极含有表面被低结晶性碳覆盖的石墨， 电解液含有一种或多种选自碳酸亚丙酯，碳酸丁酯，4-氟-1,3-二氧戊环-2-酮和4,5-二氟-1,3-二氧戊环-2-酮的高氧化电位溶剂， 2-酮在溶剂的5至60体积％范围内，以及选自碳酸二甲酯和氟化环醚的一种或两种低粘度溶剂。

    Surface emitting laser
    6.
    发明授权
    Surface emitting laser 失效
    表面发射激光

    公开(公告)号：US07881358B2

    公开(公告)日：2011-02-01

    申请号：US12518529

    申请日：2007-12-18

    申请人： Takayoshi Anan ,  Naofumi Suzuki ,  Kenichiro Yashiki ,  Masayoshi Tsuji ,  Hiroshi Hatakeyama ,  Kimiyoshi Fukatsu ,  Takeshi Akagawa

    发明人： Takayoshi Anan ,  Naofumi Suzuki ,  Kenichiro Yashiki ,  Masayoshi Tsuji ,  Hiroshi Hatakeyama ,  Kimiyoshi Fukatsu ,  Takeshi Akagawa

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18308 ,  H01S5/06226 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/3095

    摘要： A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ

    摘要翻译： 表面发射激光器设置有包括第一层的第一多层布拉格反射镜，包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。 此外，光谐振器单元分别与第一层和第二层接触。 谐振器单元的有效折射率neff大于第一层或第二层，并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系，以满足以下关系： 0.5λ

    SURFACE EMITTING LASER
    7.
    发明申请
    SURFACE EMITTING LASER 审中-公开
    表面发射激光

    公开(公告)号：US20090080488A1

    公开(公告)日：2009-03-26

    申请号：US12237048

    申请日：2008-09-24

    申请人： Hiroshi HATAKEYAMA ,  Naofumi SUZUKI ,  Kenichiro YASHIKI ,  Takeshi AKAGAWA ,  Takayoshi ANAN ,  Masayoshi TSUJI ,  Kimiyoshi FUKATSU

    发明人： Hiroshi HATAKEYAMA ,  Naofumi SUZUKI ,  Kenichiro YASHIKI ,  Takeshi AKAGAWA ,  Takayoshi ANAN ,  Masayoshi TSUJI ,  Kimiyoshi FUKATSU

    IPC分类号： H01S5/187 ,  H01S5/18

    CPC分类号： H01S5/18369 ,  B82Y20/00 ,  H01S5/06226 ,  H01S5/105 ,  H01S5/18308 ,  H01S5/18327 ,  H01S5/18358 ,  H01S5/3095 ,  H01S5/34306

    摘要： A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a second reflector formed on the semiconductor spacer layer in a region above the tunnel junction layer, a first electrode formed in the periphery of the second reflector on the semiconductor spacer layer, and a second electrode electrically connected to a layer lower than the active layer, wherein a layer thickness of the semiconductor spacer layer in the region directly above the tunnel junction layer is thinner than the layer thickness of the semiconductor spacer layer in the region directly below the first electrode.

    摘要翻译： 一种表面发射激光器，包括半导体衬底，半导体衬底，形成在半导体衬底上的第一反射器，形成在第一反射器上的有源层，形成在有源层的一部分上方的隧道结层，覆盖 所述隧道结层，在所述隧道结层上方的区域中形成在所述半导体间隔层上的第二反射器，形成在所述半导体间隔层上的所述第二反射器的周围的第一电极，以及电连接到所述第二反射层的下层 有源层，其中在隧道结层的正上方的区域中的半导体间隔层的层厚度比第一电极正下方的区域中的半导体间隔层的层厚度薄。

    Surface-emission type semiconductor laser
    10.
    发明授权
    Surface-emission type semiconductor laser 失效
    表面发射型半导体激光器

    公开(公告)号：US07974328B2

    公开(公告)日：2011-07-05

    申请号：US12531326

    申请日：2008-03-14

    申请人： Naofumi Suzuki ,  Masayoshi Tsuji ,  Takayoshi Anan ,  Kenichiro Yashiki ,  Hiroshi Hatakeyama ,  Kimiyoshi Fukatsu ,  Takeshi Akagawa

    发明人： Naofumi Suzuki ,  Masayoshi Tsuji ,  Takayoshi Anan ,  Kenichiro Yashiki ,  Hiroshi Hatakeyama ,  Kimiyoshi Fukatsu ,  Takeshi Akagawa

    IPC分类号： H01S5/00

    CPC分类号： H01S5/06226 ,  H01S5/1039 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/227 ,  H01S5/3095

    摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),  (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4.  (2)

    摘要翻译： 本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。 在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激光波长λ0的光程长度（L）为0.9×λ0＆nlE; L＆nlE; 1.1×λ0时，表示 通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中光路长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。 （2）