公开(公告)号：US4798743A

公开(公告)日：1989-01-17

申请号：US863187

申请日：1986-05-14

申请人： Seiji Kojima ,  Masakiyo Ikeda ,  Hiroshi Kikuchi ,  Yuzo Kashiwayanagi

发明人： Seiji Kojima ,  Masakiyo Ikeda ,  Hiroshi Kikuchi ,  Yuzo Kashiwayanagi

IPC分类号： C30B25/02 ,  H01L21/205 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/925

摘要： A vapor phase deposition method for the GaAs thin film is disclosed, which is characterized in that, in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are decomposed thermally and GaAs crystals are allowed to deposit onto the GaAs substrate, for the deposition of n-type conductive GaAs crystals, arsine gas and organic gallium gas are supplied at such a supplying ratio (V/III) as p-type conductive GaAs crystals are deposited unless an impurity is added intentionally and gas of the compounds of VI group elements is added to these gases to make n-type conductive GaAs crystals having a carrier density of not less than 1.times.10.sup.16 cm.sup.-3.

摘要翻译： 公开了一种用于GaAs薄膜的气相沉积方法，其特征在于，在其中使胂气体和有机镓气体热分解并使GaAs晶体沉积到金属有机化学气相沉积方法（MOCVD法）中， 用于沉积n型导电GaAs晶体的GaAs衬底，以这样的供给比（V / III）供给砷酸气体和有机镓气体，除非有意地添加p型导电GaAs晶体，否则有意地添加杂质， 将VI族元素的化合物加入到这些气体中，以制备载流子密度不小于1×1016cm-3的n型导电GaAs晶体。

公开(公告)号：US4853066A

公开(公告)日：1989-08-01

申请号：US113546

申请日：1987-10-26

申请人： Seikoh Yoshida ,  Toshio Kikuta ,  Yuzo Kashiwayanagi

发明人： Seikoh Yoshida ,  Toshio Kikuta ,  Yuzo Kashiwayanagi

IPC分类号： C30B11/00

CPC分类号： C30B11/003 ,  Y10S117/902

摘要： A method and an apparatus for growing a crystal of a compound semiconductor, in which a heater, used to heat a boat for growing the semiconductor crystal, is disposed around an ampule containing the boat, and a melt of the compound semiconductor, which is prepared in the boat, is freezed gradually at a predetermined temperature gradient including the freezing point of the melt, from a crystal growth starting end of the boat to a crystal growth terminating end thereof, whereby a single crystal or a polycrystal is grown. At the start of crystal growth, a crystalline nucleus is formed by periodically changing the temperature of the crystal growth starting end of the boat, in descending and ascending modes, within a temperature range lower than the melting point of the compound semiconductor, after once lowering the temperature of the starting end to a level lower than the melting point by means of a heater block opposed to the starting end. The crystal is grown around the crystalline nucleus formed in this manner. Preferably, the temperature change at the crystal growth starting end is slower in the descendng mode than in the ascending mode. The method of the invention may be applied without regard to the use of a seed crystal.

摘要翻译： 一种用于生长化合物半导体的晶体的方法和装置，其中用于加热用于生长半导体晶体的船的加热器设置在包含船的安瓿的周围，以及准备的化合物半导体的熔体 在船上，以包括熔融物的凝固点在内的预定温度梯度从船的晶体生长起始端逐渐冷冻至其晶体生长终止端，从而生长单晶或多晶。 在晶体生长开始时，一旦下降，在低于化合物半导体的熔点的温度范围内，以升降模式周期性地改变船的晶体生长起始端的温度，形成结晶核 通过与起始端相对的加热器块将起始端的温度降至低于熔点的水平。 晶体生长在以这种方式形成的结晶核周围。 优选地，在下降模式下，晶体生长开始端的温度变化比在上升模式中更慢。 可以应用本发明的方法而不考虑使用晶种。

公开(公告)号：US5037674A

公开(公告)日：1991-08-06

申请号：US462348

申请日：1990-01-03

申请人： Seiji Kojima ,  Masakiyo Ikeda ,  Hiroshi Kikuchi ,  Yuzo Kashiwayanagi

发明人： Seiji Kojima ,  Masakiyo Ikeda ,  Hiroshi Kikuchi ,  Yuzo Kashiwayanagi

IPC分类号： C30B29/42 ,  C30B25/02 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/42 ,  Y10S438/925

摘要： Doped thin films of GaAs are chemically vapor deposited by depositing a high resistant buffer layer of GaAs on a GaAs substrate by gaseous reaction of a mixture of arsine gas and trimethylgallium in the gas phase over the substrate while the temperature of the substrate is maintained within the range of 600.degree.-700.degree. C., stopping the supply of trimethylgallium to the gas mixture undergoing reaction and increasing the temperature of the substrate to within the range of 700.degree.-800.degree. C., and then resuming the supply of trimethylgallium to and supplying hydrogen sulfide to the gas phase over the substrate at the stated temperature, thereby depositing a doped GaAs layer over the buffer layer on the substrate having a distribution of carrier density of less than 5%.

摘要翻译： 掺杂的GaAs的薄膜通过在GaAs衬底上沉积高电阻缓冲层的GaAs来进行化学气相沉积，该衬底通过在衬底上的气相中的胂气体和三甲基镓的混合物的气相反应，同时衬底的温度保持在 范围为600°-700℃，停止向经历反应的气体混合物供应三甲基镓，并将基板的温度升高至700-800℃，然后恢复供应三甲基镓 在所述温度下在衬底上向气相提供硫化氢，从而在衬底上的缓冲层上沉积载流子密度小于5％的掺杂GaAs层。

公开(公告)号：US4705700A

公开(公告)日：1987-11-10

申请号：US868060

申请日：1986-05-29

申请人： Masakiyo Ikeda ,  Seiji Kojima ,  Hiroshi Kikuchi ,  Yuzo Kashiwayanagi

发明人： Masakiyo Ikeda ,  Seiji Kojima ,  Hiroshi Kikuchi ,  Yuzo Kashiwayanagi

IPC分类号： C30B25/12 ,  C23C16/458 ,  C30B25/02 ,  C30B25/16 ,  H01L21/205

CPC分类号： C23C16/4588

摘要： A chemical vapor deposition method for making a semiconductor thin film is disclosed, which is characterized in that, in the method wherein semiconductor thin films are allowed to deposit onto the substrates by allowing the susceptor in the shape of polygonal frustum fitted with a plurality of semicondutor substrates to the side faces thereof to rotate in the vertical type reaction tube, by introducing the source gases and the carrier gas into the tube, and by heating the substrates to allow the source gases to react through thermal decomposition, the number of rotations of susceptor is varied in terms of rectangular wave function, trapezoidal wave function or sine wave function and the susceptor is allowed to rotate in converse directions depending on the positive region and the negative region of the function.

摘要翻译： 公开了一种用于制造半导体薄膜的化学气相沉积方法，其特征在于，通过允许将半导体薄膜放置在具有多个半导体的多边形截头锥体的形状的基板上， 通过将源气体和载气引入管中，并且通过加热基板以允许源气体通过热分解反应，基座的旋转数量在垂直型反应管中旋转的基板 在矩形波函数，梯形波函数或正弦波函数方面是不同的，并且允许基座根据函数的正区域和负区域在相反方向上旋转。