公开(公告)号：US08519333B2

公开(公告)日：2013-08-27

申请号：US13463208

申请日：2012-05-03

申请人： Chiyan Kuan ,  Yi-Xiang Wang ,  Chung-Shih Pan ,  Zhonghua Dong ,  Zhongwei Chen

发明人： Chiyan Kuan ,  Yi-Xiang Wang ,  Chung-Shih Pan ,  Zhonghua Dong ,  Zhongwei Chen

IPC分类号： H01J37/20 ,  H01J37/26 ,  G01N23/225 ,  G01N23/22

CPC分类号： G01N23/2251 ,  G01N2223/307 ,  G01N2223/611

摘要： The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.

摘要翻译： 本发明涉及一种用于掩模版或半导体晶片缺陷检查和审查的带电粒子系统，更具体地涉及一种用于掩模版或半导体晶片缺陷检查和检查的电子束检查工具，而不引力AMC沉降。 带电粒子系统是一个向上的电子束检查系统。 面朝下设计可以防止AMC在检查期间在试样的被检查面上引力沉降，之后与常规的面朝上检查系统相比具有更清洁的结果。

公开(公告)号：US20120280125A1

公开(公告)日：2012-11-08

申请号：US13463208

申请日：2012-05-03

申请人： CHIYAN KUAN ,  YI-XIANG WANG ,  CHUNG-SHIH PAN ,  ZHONGHUA DONG ,  ZHONGWEI CHEN

发明人： CHIYAN KUAN ,  YI-XIANG WANG ,  CHUNG-SHIH PAN ,  ZHONGHUA DONG ,  ZHONGWEI CHEN

IPC分类号： G01N23/225 ,  G21K5/10

CPC分类号： G01N23/2251 ,  G01N2223/307 ,  G01N2223/611

摘要： The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.

摘要翻译： 本发明涉及一种用于掩模版或半导体晶片缺陷检查和审查的带电粒子系统，更具体地涉及一种用于掩模版或半导体晶片缺陷检查和检查的电子束检查工具，而不引力AMC沉降。 带电粒子系统是一个向上的电子束检查系统。 面朝下设计可以防止AMC在检查期间在试样的被检查面上引力沉降，之后与常规的面朝上检查系统相比具有更清洁的结果。

公开(公告)号：US07705298B2

公开(公告)日：2010-04-27

申请号：US11939530

申请日：2007-11-13

申请人： Xuedong Liu ,  Zhonghua Dong ,  Wei Fang ,  Zhong-Wei Chen

发明人： Xuedong Liu ,  Zhonghua Dong ,  Wei Fang ,  Zhong-Wei Chen

IPC分类号： H01J37/28 ,  H01J37/21 ,  H01J3/14

CPC分类号： H01J37/28 ,  H01J37/21 ,  H01J2237/14 ,  H01J2237/216 ,  H01J2237/2817

摘要： This invention relates to apparatus and method to fast determine focus parameters in one pre-scan during an e-beam inspection practice. More specifically, embodiments of the present invention provide an apparatus and method that provide accurate focus tuning after primary focusing has been done.

摘要翻译： 本发明涉及在电子束检查实践期间快速确定一次预扫描中的焦点参数的装置和方法。 更具体地，本发明的实施例提供了一种在进行主要聚焦之后提供精确聚焦调谐的装置和方法。

公开(公告)号：US20090108199A1

公开(公告)日：2009-04-30

申请号：US11939530

申请日：2007-11-13

申请人： Xuedong LIU ,  Zhonghua DONG ,  Wei FANG ,  Zhong-Wei CHEN

发明人： Xuedong LIU ,  Zhonghua DONG ,  Wei FANG ,  Zhong-Wei CHEN

IPC分类号： H01J3/14 ,  H01J37/21

CPC分类号： H01J37/28 ,  H01J37/21 ,  H01J2237/14 ,  H01J2237/216 ,  H01J2237/2817

摘要： This invention relates to apparatus and method to fast determine focus parameters in one pre-scan during an e-beam inspection practice. More specifically, embodiments of the present invention provide an apparatus and method that provide accurate focus tuning after primary focusing has been done.

摘要翻译： 本发明涉及在电子束检查实践期间快速确定一次预扫描中的焦点参数的装置和方法。 更具体地，本发明的实施例提供了一种在进行主要聚焦之后提供精确聚焦调谐的装置和方法。