摘要:
This invention relates to apparatus and method to fast determine focus parameters in one pre-scan during an e-beam inspection practice. More specifically, embodiments of the present invention provide an apparatus and method that provide accurate focus tuning after primary focusing has been done.
摘要:
The present invention includes an electron beam device for examining defects on semiconductor devices. The device includes an electron source for generating a primary electron beam, wherein the total acceleration potential is divided and is provided across the ground potential. Also included is at least one condenser lens for pre-focusing the primary electron beam, an aperture for confining the primary electron beam to ameliorate electron-electron interaction, wherein the aperture is positioned right underneath the last condenser lens, and a SORIL objective lens system for forming immersion magnetic field and electrostatic field to focus the primary beam onto the specimen in the electron beam path. A pair of grounding rings for providing virtual ground voltage potential to those components within the electron beam apparatus installed below a source anode and above a last polepiece of the SORIL objective lens.
摘要:
An electron beam apparatus and method are presented for collecting side-view and plane-view SEM imagery. The electron beam apparatus includes an electron source, some intermediate lenses if needed, an objective lens and an in-lens sectional detector. The electron source will provide an electron beam. The intermediate lenses focus the electron beam further. The objective lens is a combination of an immersion magnetic lens and a retarding electrostatic lens focuses the electron beam onto the specimen surface. The in-lens detector will be divided into two or more sections to collect secondary electrons emanating from the specimen with different azimuth and polar angle so that side-view SEM imagery can be obtained.
摘要:
The present invention includes an electron beam device for examining defects on semiconductor devices. The device includes an electron source for generating a primary electron beam, wherein the total acceleration potential is divided and is provided across the ground potential. Also included is at least one condenser lens for pre-focusing the primary electron beam, an aperture for confining the primary electron beam to ameliorate electron-electron interaction, wherein the aperture is positioned right underneath the last condenser lens, and a SORIL objective lens system for forming immersion magnetic field and electrostatic field to focus the primary beam onto the specimen in the electron beam path. A pair of grounding rings for providing virtual ground voltage potential to those components within the electron beam apparatus installed below a source anode and above a last polepiece of the SORIL objective lens.
摘要:
An electron beam apparatus and method are presented for collecting side-view and plane-view SEM imagery. The electron beam apparatus includes an electron source, some intermediate lenses if needed, an objective lens and an in-lens sectional detector. The electron source will provide an electron beam. The intermediate lenses focus the electron beam further. The objective lens is a combination of an immersion magnetic lens and a retarding electrostatic lens focuses the electron beam onto the specimen surface. The in-lens detector will be divided into two or more sections to collect secondary electrons emanating from the specimen with different azimuth and polar angle so that side-view SEM imagery can be obtained.
摘要:
A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.
摘要:
A method and apparatus for a charged particle scanning system and an automatic inspection system, including wafers and masks used in microcircuit fabrication. A charged particle beam is directed at the surface of a substrate for scanning that substrate and a selection of detectors are included to detect at least one of the secondary charged particles, back-scattered charged particles and transmitted charged particles from the substrate. The substrate is mounted on an x-y stage to provide at least one degree of freedom while the substrate is being scanned by the charged particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary charged particles. The system facilitates inspection at low beam energies on charge sensitive insulating substrates and has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment system for initially aligning the substrate beneath the charged particle beam. To function most efficiently there is also a vacuum system for evacuating and repressurizing a chamber containing the substrate. The vacuum system can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum system can simultaneously evacuate a plurality of substrates prior to inspection and repressurize the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison system for comparing the pattern on the substrate with a second pattern.
摘要:
An electron gun comprises an electron emitter, an electrode surrounding the electron emitter, an extraction electrode, and a double condenser lens assembly, the double condenser lens assembly comprising a magnetic immersion pre-condenser lens and a condenser lens. In combination with a probe forming objective lens, the electron gun apparatus can provide an electron beam of independently adjustable probe size and probe current, as is desirable in electron beam applications. The electron emitter is immersed in the magnetic field generated by a magnetic type pre-condenser lens. When activated, the pre-condenser lens collimates the beam effectively to increase its angular intensity while at the same time enlarging the virtual source as compared with non-immersion case, due to geometric magnification and aberrations of its lens action. The pre-condenser lens is followed by a condenser lens. If the condenser lens is of the magnetic type, its peak magnetic field is far enough away and thus its action does not significantly affect the size of the virtual source. Independent adjustment of the lenses, combined with suitable selection of final probe forming objective aperture size, allows various combination of the final probe size and probe current to be obtained in a range sufficient for most electron beam applications.
摘要:
A swinging objective retarding immersion lens system and method therefore which provide a low voltage electron beam with high beam current, relatively high spatial resolution, a relative large scan field, and high signal collection efficiency. The objective lens includes a magnetic lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, an electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen; a deflection system including a plurality of deflection units situated along the beam axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the magnetic lens; and a annular detection unit with a relatively small aperture, located underneath the primary beam define aperture, to capture secondary electron (SE) and backscattered electrons (BSE).
摘要:
A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode.