公开(公告)号：US10072351B2

公开(公告)日：2018-09-11

申请号：US15306787

申请日：2015-04-17

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Emanuel M. Sachs ,  Ralf Jonczyk ,  Adam L. Lorenz ,  Richard L. Wallace ,  G. D. Stephen Hudelson

IPC: H01L29/06 ,  C30B11/02 ,  C30B29/06 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18

CPC classification number: C30B11/02 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6×1017 atoms/cc, preferably less than 2×1017, total oxygen less than 8.75×1017 atoms/cc, preferably less than 5.25×1017. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.