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    OPTICAL ENDPOINT DETECTION SYSTEM
    3.
    发明申请
    OPTICAL ENDPOINT DETECTION SYSTEM 有权
    光端点检测系统

    公开(公告)号：US20120273005A1

    公开(公告)日：2012-11-01

    申请号：US13440564

    申请日：2012-04-05

    申请人： BALASUBRAMANIAN RAMACHANDRAN ,  MASATO ISHII ,  AARON MUIR HUNTER

    发明人： BALASUBRAMANIAN RAMACHANDRAN ,  MASATO ISHII ,  AARON MUIR HUNTER

    IPC分类号： B08B9/46 ,  B08B7/04

    CPC分类号： B08B9/46 ,  B08B3/08 ,  B08B3/10 ,  C23C16/4405 ,  C23C16/52 ,  G01N21/94 ,  G01N2021/8416 ,  H01L21/67253

    摘要： Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.

    摘要翻译： 提供了用于确定处理室清洁过程的端点的方法和装置。 在一些实施例中，具有端点检测系统的处理系统可以包括处理室，其具有由于处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统，其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

    RAPID COOLING OF A SUBSTRATE BY MOTION
    4.
    发明申请
    RAPID COOLING OF A SUBSTRATE BY MOTION 审中-公开
    通过运动快速冷却基底

    公开(公告)号：US20100193154A1

    公开(公告)日：2010-08-05

    申请号：US12694634

    申请日：2010-01-27

    申请人： WOLFGANG R. ADERHOLD ,  LEONID M. TERTITSKI ,  AARON MUIR HUNTER ,  MARTIN TRAN

    发明人： WOLFGANG R. ADERHOLD ,  LEONID M. TERTITSKI ,  AARON MUIR HUNTER ,  MARTIN TRAN

    IPC分类号： F28D21/00

    CPC分类号： H01L21/67109 ,  H01L21/67115

    摘要： Methods for cooling a substrate are provided herein. In some embodiments, a method for cooling a substrate includes heating a substrate in a process chamber from an introductory temperature to a peak temperature of greater than about 900 degrees Celsius; and cooling the substrate from within about 50 degrees Celsius of the peak temperature by moving the substrate at a rate of at least about 3 millimeters/second in a direction normal to an upper surface of the substrate. In some embodiments, cooling the substrate by moving the substrate further comprises moving the substrate to a first position having a first distance from an upper surface of the process chamber; and subsequently moving the substrate to a second position having a second distance that is further away from the upper surface than the first distance. In some embodiments, a residence time proximate the peak temperature is about 0.6 seconds or less.

    摘要翻译： 本文提供了冷却基板的方法。 在一些实施例中，用于冷却衬底的方法包括将处理室中的衬底从介入温度加热到大于约900摄氏度的峰值温度; 并且通过在垂直于衬底的上表面的方向上以至少约3毫米/秒的速率移动衬底，从而在峰值温度的约50摄氏度内冷却衬底。 在一些实施例中，通过移动衬底来冷却衬底还包括将衬底移动到与处理室的上表面具有第一距离的第一位置; 并且随后将所述基板移动到具有比所述第一距离更远离所述上表面的第二距离的第二位置。 在一些实施方案中，接近峰值温度的停留时间为约0.6秒或更短。