-
1.发明申请TEMPERATURE MEASUREMENT AND CONTROL OF WAFER SUPPORT IN THERMAL PROCESSING CHAMBER 审中-公开温度测量和控制热处理室中的支撑公开(公告)号：US20110089166A1
公开(公告)日：2011-04-21
申请号：US12973112
申请日：2010-12-20
CPC分类号： H01L21/67248 , H01L21/67115
摘要： The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
摘要翻译： 本发明提供了用于在快速热处理期间实现对衬底的均匀加热的装置和方法。 更具体地，本发明提供了用于在快速热处理期间控制支撑衬底的边缘环的温度的装置和方法，以改善穿过衬底的温度均匀性。
-
2.发明申请公开(公告)号：US20080170842A1
公开(公告)日：2008-07-17
申请号：US11623238
申请日：2007-01-15
IPC分类号： A21B2/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
摘要翻译： 本发明提供了用于在快速热处理期间实现对衬底的均匀加热的装置和方法。 更具体地，本发明提供了用于在快速热处理期间控制支撑衬底的边缘环的温度的装置和方法，以改善穿过衬底的温度均匀性。
-
3.发明授权Temperature measurement and control of wafer support in thermal processing chamber 有权热处理室中晶片支架的温度测量和控制公开(公告)号：US07860379B2
公开(公告)日：2010-12-28
申请号：US11623238
申请日：2007-01-15
CPC分类号： H01L21/67248 , H01L21/67115
摘要： The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
摘要翻译： 本发明提供了用于在快速热处理期间实现对衬底的均匀加热的装置和方法。 更具体地，本发明提供了用于在快速热处理期间控制支撑衬底的边缘环的温度的装置和方法，以改善穿过衬底的温度均匀性。
-
4.发明申请公开(公告)号：US20080169282A1
公开(公告)日：2008-07-17
申请号：US12055045
申请日：2008-03-25
申请人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
发明人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.
摘要翻译： 公开了用于在快速热处理期间实现基板均匀加热或冷却的装置和方法。 更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到 加热或冷却边缘环。
-
5.发明申请PYROMETER FOR LASER ANNEALING SYSTEM COMPATIBLE WITH AMORPHOUS CARBON OPTICAL ABSORBER LAYER 有权激光退火系统与不对称碳光吸收层兼容的紫外光公开(公告)号：US20110006044A1
公开(公告)日：2011-01-13
申请号：US12886809
申请日：2010-09-21
申请人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
发明人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
CPC分类号： B23K26/0665 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/18 , B23K2101/40
摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.
摘要翻译： 在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于 工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。 具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。
-
公开(公告)号：US08232503B2
公开(公告)日：2012-07-31
申请号：US12886809
申请日：2010-09-21
申请人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
发明人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
IPC分类号： B23K26/08
CPC分类号： B23K26/0665 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/18 , B23K2101/40
摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.
摘要翻译： 在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于 工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。 具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。
-
7.发明授权Pryometer for laser annealing system compatible with amorphous carbon optical absorber layer 有权用于与无定形碳光吸收层兼容的激光退火系统的脉冲计公开(公告)号：US07804042B2
公开(公告)日：2010-09-28
申请号：US11764738
申请日：2007-06-18
申请人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
发明人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
IPC分类号： B23K26/00
CPC分类号： B23K26/0665 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/18 , B23K2101/40
摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.
摘要翻译： 在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于 工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。 具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。
-
8.发明申请PYROMETER FOR LASER ANNEALING SYSTEM COMPATIBLE WITH AMORPHOUS CARBON OPTICAL ABSORBER LAYER 有权激光退火系统与不对称碳光吸收层兼容的紫外光公开(公告)号：US20080308534A1
公开(公告)日：2008-12-18
申请号：US11764738
申请日：2007-06-18
申请人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
发明人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
CPC分类号： B23K26/0665 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/18 , B23K2101/40
摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.
摘要翻译： 在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于 工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。 具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。
-
9.发明授权公开(公告)号：US07112763B2
公开(公告)日：2006-09-26
申请号：US10974003
申请日：2004-10-26
申请人： Aaron Hunter , Rajesh S. Ramanujam , Balasubramanian Ramachandran , Corina Elena Tanasa , Tarpan Dixit
发明人： Aaron Hunter , Rajesh S. Ramanujam , Balasubramanian Ramachandran , Corina Elena Tanasa , Tarpan Dixit
IPC分类号： F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.
摘要翻译： 快速热处理（RTP）系统，其包括透射高温计，其以降低的功率水平监测来自RTP灯的辐射的硅晶片的温度依赖性吸收。 创建了与晶圆和辐射灯温度相关的光电检测器光电流的非标准化值的查找表。 校准步骤测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流相应地被归一化。 传输高温计可用于低于500°C的热处理的闭环控制，或用于预热阶段，用于更高温度的过程，包括闭环控制中的辐射高温计。 可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。 辐射和透射高温计可以包括在具有分束器的分离器的集成结构中。
-
公开(公告)号：US08254767B2
公开(公告)日：2012-08-28
申请号：US12547605
申请日：2009-08-26
申请人： Aaron M. Hunter , Jiping Li , Rajesh S. Ramanujam , Thomas Haw
发明人： Aaron M. Hunter , Jiping Li , Rajesh S. Ramanujam , Thomas Haw
IPC分类号： A21B2/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： Embodiments of the invention are directed to methods and apparatus for rapid thermal processing of a substrate over an extended temperature range, including low temperatures. Systems and methods for using an extended temperature pyrometry system employing a transmitted radiation detector system are disclosed. Systems combining transmitted radiation detector systems and emitted radiation detector systems are also described.
摘要翻译： 本发明的实施例涉及用于在包括低温的扩展温度范围内快速热处理衬底的方法和装置。 公开了使用采用透射辐射探测器系统的扩展温度测温系统的系统和方法。 还描述了组合透射辐射检测器系统和发射的辐射探测器系统的系统。
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.025 秒)
