公开(公告)号：US20150108214A1

公开(公告)日：2015-04-23

申请号：US14513299

申请日：2014-10-14

Applicant: ABB Oy

Inventor： Jouko Topias Hellman ,  Mika Niemi

IPC: G06Q10/08

CPC classification number: G06Q10/087 ,  H05K7/1455

Abstract: The present invention concerns a method and system for detection of a circuit board to be installed in an apparatus such as an electric drive. At least one first element is fixedly arranged at at least one defined position on the surface of the circuit board and at least one second element is fixedly arranged at at least one defined position in a housing of the circuit board. The at least one first element interacts with the at least one second element during installation of the required circuit board. A matching signal or decoding signal is generated when the first element and the second element interact. The invention further concerns an apparatus such as an electric drive with at least one circuit board arranged in a housing.

Abstract translation: 本发明涉及一种用于检测要安装在诸如电驱动器的装置中的电路板的方法和系统。 至少一个第一元件固定地布置在电路板的表面上的至少一个限定位置，并且至少一个第二元件固定地布置在电路板的壳体中的至少一个限定位置。 所述至少一个第一元件在所需电路板的安装期间与所述至少一个第二元件相互作用。 当第一元件和第二元件相互作用时，产生匹配信号或解码信号。 本发明还涉及一种装置，例如具有布置在壳体中的至少一个电路板的电驱动器。

公开(公告)号：US09590619B2

公开(公告)日：2017-03-07

申请号：US14631362

申请日：2015-02-25

Applicant: ABB OY

Inventor： Jukka-Pekka Kittilä ,  Mika Niemi ,  Mikko Saarinen

IPC: H03B21/00 ,  H03K3/00 ,  H03K17/567 ,  H03K17/0812 ,  H03K17/14 ,  H03K17/16

CPC classification number: H03K17/567 ,  H03K17/0812 ,  H03K17/14 ,  H03K17/162 ,  H03K17/168

Abstract: A gate drive circuit creates a bipolar voltage to a gate of an IGB power transistor, and compensates for Miller currents of the IGB power transistor. The compensating is performed by a switching element connected in series with a capacitor between the gate (X4) and a supply voltage.

Abstract translation: 栅极驱动电路为IGB功率晶体管的栅极产生双极性电压，并补偿IGB功率晶体管的米勒电流。 补偿由在栅极（X4）和电源电压之间与电容器串联连接的开关元件来执行。

公开(公告)号：US09503077B2

公开(公告)日：2016-11-22

申请号：US14564766

申请日：2014-12-09

Applicant: ABB OY

Inventor： Mika Niemi

IPC: H03K17/06 ,  H03K17/66 ,  H03K17/082 ,  H03K17/12

CPC classification number: H03K17/66 ,  H03K17/082 ,  H03K17/12

Abstract: An exemplary method and arrangement for balancing currents of power semiconductors. The arrangement including multiple power semiconductor units and a central control unit. Each power semiconductor unit includes a power semiconductor and the central control unit and the power semiconductor units are arranged in a bi-directional ring, in which the central control unit sends control information for the power semiconductor units in both directions in the bi-directional ring and each power semiconductor unit receives the control information in both directions and forwards the received control information. Each power semiconductor unit configured to receive the control information from the first direction at a first time instant, receive the control information from the second direction at a second time instant, calculate a midpoint between the first and the second time instants, and control the power semiconductor component according to the control information after a time delay after the calculated midpoint has elapsed.

Abstract translation: 用于平衡功率半导体电流的示例性方法和装置。 该装置包括多个功率半导体单元和中央控制单元。 每个功率半导体单元包括功率半导体，并且中央控制单元和功率半导体单元布置在双向环中，其中中央控制单元在双向环中向两个方向发送功率半导体单元的控制信息 并且每个功率半导体单元在两个方向上接收控制信息并转发所接收的控制信息。 每个功率半导体单元被配置为在第一时刻从第一方向接收控制信息，在第二时刻从第二方向接收控制信息，计算第一和第二时刻之间的中点，并且控制功率 半导体元件根据计算出的中点经过时间延迟后的控制信息。

公开(公告)号：US20150381166A1

公开(公告)日：2015-12-31

申请号：US14631362

申请日：2015-02-25

Applicant: ABB OY

Inventor： Jukka-Pekka KITTILÄ ,  Mika Niemi ,  Mikko Saarinen

IPC: H03K17/567 ,  H03K17/16

CPC classification number: H03K17/567 ,  H03K17/0812 ,  H03K17/14 ,  H03K17/162 ,  H03K17/168

Abstract: A gate drive circuit creates a bipolar voltage to a gate of an IGB power transistor, and compensates for Miller currents of the IGB power transistor. The compensating is performed by a switching element connected in series with a capacitor between the gate (X4) and a supply voltage.

Abstract translation: 栅极驱动电路为IGB功率晶体管的栅极产生双极性电压，并补偿IGB功率晶体管的米勒电流。 补偿由在栅极（X4）和电源电压之间与电容器串联连接的开关元件来执行。