公开(公告)号：US10192800B2

公开(公告)日：2019-01-29

申请号：US15819579

申请日：2017-11-21

Applicant: ABB Schweiz AG

Inventor： Fabian Mohn ,  Paul Commin

IPC: H01L23/16 ,  H01L23/051 ,  H01L23/00

Abstract: A semiconductor device comprises two electrodes with opposite faces; a semiconductor wafer sandwiched between the two electrodes; an outer insulating ring attached to the two electrodes and surrounding the semiconductor wafer; a middle insulating ring inside the outer insulating ring and surrounding the semiconductor wafer, whereby the middle insulating ring is made of a plastics material; and an inner insulating ring inside the middle insulating ring, whereby the inner insulating ring is made of ceramics and/or glass material. Either the middle insulating ring or the inner insulating ring has a tongue and the other thereof has a groove such that the tongue fits into the groove for their rotational alignment. The middle insulating ring and the inner insulating ring have a radial opening for receiving a gate connection of the semiconductor device.

公开(公告)号：US20180090572A1

公开(公告)日：2018-03-29

申请号：US15826427

申请日：2017-11-29

Applicant: ABB Schweiz AG

Inventor： Marco Bellini ,  Jan Vobecky ,  Paul Commin

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/74

CPC classification number: H01L29/102 ,  H01L29/0692 ,  H01L29/0839 ,  H01L29/42308 ,  H01L29/74 ,  H01L29/7404 ,  H01L29/7428 ,  H01L29/7432

Abstract: There is provided a thyristor having emitter shorts, wherein in an orthogonal projection onto a plane parallel to a first main side, a contact area covered by an electrical contact of a first electrode layer with a first emitter layer and the emitter shorts includes areas in the shape of lanes, in which an area coverage of the emitter shorts is less than the area coverage of emitter shorts in the remaining area of the contact area, wherein the area coverage of the emitter shorts in a specific area is the area covered by the emitter shorts in that specific area relative to the specific area. The thyristor of the invention exhibits a fast turn-on process even without complicated amplifying gale structure.

公开(公告)号：US10170557B2

公开(公告)日：2019-01-01

申请号：US15826427

申请日：2017-11-29

Applicant: ABB Schweiz AG

Inventor： Marco Bellini ,  Jan Vobecky ,  Paul Commin

IPC: H01L29/10 ,  H01L29/74 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423

Abstract: There is provided a thyristor having emitter shorts, wherein in an orthogonal projection onto a plane parallel to a first main side, a contact area covered by an electrical contact of a first electrode layer with a first emitter layer and the emitter shorts includes areas in the shape of lanes, in which an area coverage of the emitter shorts is less than the area coverage of emitter shorts in the remaining area of the contact area, wherein the area coverage of the emitter shorts in a specific area is the area covered by the emitter shorts in that specific area relative to the specific area. The thyristor of the invention exhibits a fast turn-on process even without complicated amplifying gate structure.

公开(公告)号：US20180090401A1

公开(公告)日：2018-03-29

申请号：US15819579

申请日：2017-11-21

Applicant: ABB Schweiz AG

Inventor： Fabian Mohn ,  Paul Commin

IPC: H01L23/051 ,  H01L23/16

CPC classification number: H01L23/051 ,  H01L23/16 ,  H01L24/01

Abstract: A semiconductor device comprises two electrodes with opposite faces; a semiconductor wafer sandwiched between the two electrodes; an outer insulating ring attached to the two electrodes and surrounding the semiconductor wafer; a middle insulating ring inside the outer insulating ring and surrounding the semiconductor wafer, whereby the middle insulating ring is made of a plastics material; and an inner insulating ring inside the middle insulating ring, whereby the inner insulating ring is made of ceramics and/or glass material. Either the middle insulating ring or the inner insulating ring has a tongue and the other thereof has a groove such that the tongue fits into the groove for their rotational alignment. The middle insulating ring and the inner insulating ring have a radial opening for receiving a gate connection of the semiconductor device.