公开(公告)号：US09300314B2

公开(公告)日：2016-03-29

申请号：US14054921

申请日：2013-10-16

Applicant: ABB TECHNOLOGY AG

Inventor： Joris Pascal ,  Richard Bloch

IPC: H03M1/12 ,  H03M1/10

CPC classification number: H03M1/12 ,  H03M1/1004 ,  H03M1/1019 ,  H03M1/1028 ,  H03M1/129

Abstract: An arrangement for reading out an analog voltage signal includes a voltage signal input for applying the analog voltage signal thereto, a reference unit configured to generate an analog reference voltage, and a converting unit configured to convert an analog input signal into a digital output signal. To enable online self-calibration of the arrangement, the arrangement includes a superposition unit configured to receive the analog voltage signal and the analog reference voltage. The superposition unit includes a modulation unit configured to generate a modulated reference voltage from the analog reference voltage. The superposition unit is configured to generate a combined analog signal by superimposing the modulated reference voltage onto the analog voltage signal, and to forward the combined analog signal to the converting unit.

Abstract translation: 用于读出模拟电压信号的装置包括用于向其施加模拟电压信号的电压信号，被配置为产生模拟参考电压的参考单元和被配置为将模拟输入信号转换为数字输出信号的转换单元。 为了实现布置的在线自校准，该布置包括被配置为接收模拟电压信号和模拟参考电压的叠加单元。 叠加单元包括被配置为从模拟参考电压产生调制参考电压的调制单元。 叠加单元被配置为通过将调制的参考电压叠加到模拟电压信号上来生成组合的模拟信号，并将组合的模拟信号转发到转换单元。

公开(公告)号：US20160313191A1

公开(公告)日：2016-10-27

申请号：US15078588

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Vinoth Sundaramoorthy ,  Enea Bianda ,  Richard Bloch ,  Lulian Nistor ,  Gerold Knapp

IPC: G01K7/01

CPC classification number: G01K7/01

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (Ic) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).

公开(公告)号：US20140176357A1

公开(公告)日：2014-06-26

申请号：US14054921

申请日：2013-10-16

Applicant: ABB TECHNOLOGY AG

Inventor： Joris PASCAL ,  Richard Bloch

IPC: H03M1/12

CPC classification number: H03M1/12 ,  H03M1/1004 ,  H03M1/1019 ,  H03M1/1028 ,  H03M1/129

Abstract: An arrangement for reading out an analog voltage signal includes a voltage signal input for applying the analog voltage signal thereto, a reference unit configured to generate an analog reference voltage, and a converting unit configured to convert an analog input signal into a digital output signal. To enable online self-calibration of the arrangement, the arrangement includes a superposition unit configured to receive the analog voltage signal and the analog reference voltage. The superposition unit includes a modulation unit configured to generate a modulated reference voltage from the analog reference voltage. The superposition unit is configured to generate a combined analog signal by superimposing the modulated reference voltage onto the analog voltage signal, and to forward the combined analog signal to the converting unit.

Abstract translation: 用于读出模拟电压信号的装置包括用于向其施加模拟电压信号的电压信号，被配置为产生模拟参考电压的参考单元和被配置为将模拟输入信号转换为数字输出信号的转换单元。 为了实现布置的在线自校准，该布置包括被配置为接收模拟电压信号和模拟参考电压的叠加单元。 叠加单元包括被配置为从模拟参考电压产生调制参考电压的调制单元。 叠加单元被配置为通过将调制的参考电压叠加到模拟电压信号上来生成组合的模拟信号，并将组合的模拟信号转发到转换单元。

公开(公告)号：US09683898B2

公开(公告)日：2017-06-20

申请号：US15078588

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Vinoth Sundaramoorthy ,  Enea Bianda ,  Richard Bloch ,  Iulian Nistor ,  Gerold Knapp

IPC: G01K7/00 ,  G01K7/01

CPC classification number: G01K7/01

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).