INTEGRATED POLARIZATION FILTER AND TAP COUPLER
    2.
    发明申请
    INTEGRATED POLARIZATION FILTER AND TAP COUPLER 有权
    集成极化滤波器和贴片耦合器

    公开(公告)号:US20150301280A1

    公开(公告)日:2015-10-22

    申请号:US14103678

    申请日:2013-12-11

    CPC classification number: G02B6/126 G02B2006/12147 G02B2006/1215 H04B10/60

    Abstract: Disclosed herein are methods, structures, apparatus and devices to integrate polarization filters and power tap couplers on planar photonic circuits that advantageously provide a lower insertion loss to an optical signal and improved optical bandwidth as compared with contemporary designs wherein these two functions are implemented separately.

    Abstract translation: 本文公开了将偏振滤光器和功率抽头耦合器集成在平面光子电路上的方法,结构,装置和装置,其有利地为光信号提供较低的插入损耗和改进的光学带宽,与其中分别实现这两个功能的当代设计相比。

    SLAB-MODE AND POLARIZATION CLEAN-UP IN SILICON PHOTONICS
    3.
    发明申请
    SLAB-MODE AND POLARIZATION CLEAN-UP IN SILICON PHOTONICS 有权
    硅胶光学中的SLAB模式和极化清洁

    公开(公告)号:US20150063769A1

    公开(公告)日:2015-03-05

    申请号:US14475506

    申请日:2014-09-02

    CPC classification number: G02B6/122 G02B6/134 G02B2006/12097

    Abstract: Disclosed are structures and methods directed to waveguide structures exhibiting improved device performance including improved attenuation of scattered light and/or transverse magnetic modes. In an illustrative embodiment according to the present disclosure, a rib waveguide structure including a rib overlying a slab waveguide (or superimposed thereon) is constructed wherein the slab waveguide is heavily doped at a distance from the rib which has a very low overlap with rib guided modes. Advantageously, such doping may be of the P-type or of the N-type, and dopants could be any of a number of known ones including—but not limited to—boron, phosphorous, etc.—or others that increase optical propagation loss. As may be appreciated, the doped regions advantageously absorb scattered light which substantially improves the structure's performance.Alternative illustrative embodiments of structures according to the present disclosure will include a metal deposited upon the slab waveguide at a distance from the rib such that scattered light is absorbed and the structure's performance is likewise enhanced.

    Abstract translation: 公开的是涉及具有改进的器件性能的波导结构的结构和方法,包括散射光和/或横向磁模式的改进的衰减。 在根据本公开的说明性实施例中,构造了包括覆盖在平板波导(或叠加在其上)上的肋的肋波导结构,其中平板波导在与肋导向的一定距离处被重掺杂,肋与肋引导具有非常低的重叠 模式。 有利地,这种掺杂可以是P型或N型,并且掺杂剂可以是许多已知的掺杂物中的任何一种,包括但不限于硼,磷等,或者增加光传播损耗的其他 。 可以理解,掺杂区域有利地吸收散射光,这大大改善了结构的性能。 根据本公开的结构的替代示例性实施例将包括沉积在与肋相距一定距离处的平板波导上的金属,使得散射光被吸收并且结构的性能同样增强。

    SIMPLIFIED EXTINCTION RATIO CONTROL FOR MULTIPLE MACH-ZEHNDER INTERFEROMETER MODULATORS
    4.
    发明申请
    SIMPLIFIED EXTINCTION RATIO CONTROL FOR MULTIPLE MACH-ZEHNDER INTERFEROMETER MODULATORS 审中-公开
    多台MACH-ZEHNDER干扰计调制器的简化放弃比例控制

    公开(公告)号:US20150198859A1

    公开(公告)日:2015-07-16

    申请号:US14103674

    申请日:2013-12-11

    Inventor: Long CHEN

    CPC classification number: G02F1/2257 G02F1/225 H04B10/5053

    Abstract: Disclosed herein are methods, structures, apparatus and devices that improve the control and/or controllability of a group of Mach-Zehnder Interferometer modulators. Advantageously, such control may be implemented with optical tuning elements shared among all of the modulators, or with separate optical tuning elements operated through the effect of a set of common signals. Accordingly implementations according to one aspect of the present disclosure provides a significantly simplified configuration—where the extinction ratios of all modulators within the group are controlled jointly—in sharp contrast to those configuration(s) wherein all modulators are individually controlled.

    Abstract translation: 本文公开了改善Mach-Zehnder干涉仪调制器组的控制和/或可控性的方法,结构,装置和装置。 有利的是,这种控制可以利用在所有调制器之间共享的光学调谐元件来实现,或者通过一组共同信号的作用被操作的单独的光学调谐元件来实现。 因此,根据本公开的一个方面的实施方案提供了显着简化的配置,其中组内的所有调节剂的消光比与所有调节剂被单独控制的那些配置联合地进行控制。

    SILICON ELECTRO-OPTICAL MODULATOR
    6.
    发明申请
    SILICON ELECTRO-OPTICAL MODULATOR 有权
    硅电极调制器

    公开(公告)号:US20160202503A1

    公开(公告)日:2016-07-14

    申请号:US14298859

    申请日:2014-06-06

    Inventor: Long CHEN

    CPC classification number: G02F1/025 G02B6/00 G02B6/134 G02F2001/0156

    Abstract: Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.

    Abstract translation: 公开了具有掺杂配置的基于硅载波耗尽的电光调制器的设计和方法,所述掺杂配置产生显示期望的调制效率,光吸收损耗和带宽特性的调制器。 所公开的具有这种掺杂配置的调制器的制造方法利用反掺杂来在波导中心附近产生相对高的掺杂浓度的窄区域。

    OPTICAL WAVEGUIDE TERMINATORS WITH DOPED WAVEGUIDES
    7.
    发明申请
    OPTICAL WAVEGUIDE TERMINATORS WITH DOPED WAVEGUIDES 审中-公开
    带波纹波的光波导终端

    公开(公告)号:US20150212271A1

    公开(公告)日:2015-07-30

    申请号:US14103666

    申请日:2013-12-11

    Inventor: Long CHEN

    Abstract: Disclosed herein are methods, structures, apparatus and devices for the termination of unused waveguide ports in planar photonic integrated circuits with doped waveguides such that free-carrier absorption therein may advantageously absorb any undesired optical power resulting in a significant reduction of stray light and resulting reflections.

    Abstract translation: 本文公开了用于在具有掺杂波导的平面光子集成电路中终止未使用波导端口的方法,结构,装置和装置,使得其中的自由载流子吸收可有利地吸收任何不期望的光功率,导致杂散光的显着减少和所得到的反射 。

    INTEGRATION OF ELECTRONIC CHIPS ONTO A PHOTONIC CHIP
    8.
    发明申请
    INTEGRATION OF ELECTRONIC CHIPS ONTO A PHOTONIC CHIP 有权
    将电子芯片整合到光电芯片上

    公开(公告)号:US20140360013A1

    公开(公告)日:2014-12-11

    申请号:US14298846

    申请日:2014-06-06

    Inventor: Long CHEN

    CPC classification number: G02B6/4274 H01L2924/0002 Y10T29/49126 H01L2924/00

    Abstract: Methods, structures, apparatus, devices, and materials to facilitate the integration of electronic integrated circuits (chips) including drivers, amplifiers, microcontrollers, etc., onto/into photonic integrated circuits (chips) using recessed windows exhibiting controlled depths onto/into the photonic chip. The electronic chips are positioned into the recessed windows and electrical connections between the electronic chips and the photonic chip are achieved by flip-chip techniques with predefined traces at a bottom of the recessed windows or direct wire bonding. Advantageously, this integration may be performed on a wafer level for large-volume productions.

    Abstract translation: 方法,结构,装置,装置和材料,以促进将包括驱动器,放大器,微控制器等的电子集成电路(芯片)集成到使用嵌入式窗口的光子集成电路(芯片)上,该窗口显示出控制深度到/ 光子芯片。 电子芯片定位在凹入的窗口中,电子芯片和光子芯片之间的电连接通过倒装芯片技术来实现,其中凹陷窗口的底部具有预定迹线或直接引线键合。 有利的是,该集成可以在晶片级上进行,用于大批量生产。

    ROBUST MODULATOR CIRCUITS USING LATERAL DOPING JUNCTIONS
    9.
    发明申请
    ROBUST MODULATOR CIRCUITS USING LATERAL DOPING JUNCTIONS 有权
    使用横向连接功能的稳健调制器电路

    公开(公告)号:US20140112611A1

    公开(公告)日:2014-04-24

    申请号:US14057883

    申请日:2013-10-18

    CPC classification number: G02F1/2257 G02F1/225 G02F2201/126

    Abstract: Disclosed herein are methods, structures, and devices that compensates for modulator loss and modulation inefficiencies introduced by mask misalignments in opposite oriented pn type junction modulators. More specifically, Mach-Zehnder type optical modulators are disclosed wherein both arms in the MZI modulator are arranged in a push-pull configuration and configured to experience pn type junctions of two orientations wherein both arms further configured to experience the same length of waveguide with a pn type junction of each orientation.

    Abstract translation: 本文公开了补偿由相对定向的pn型结型调制器中的掩模未对准引入的调制器损耗和调制低效率的方法,结构和装置。 更具体地,公开了马赫 - 曾德尔型光学调制器,其中MZI调制器中的两个臂被布置成推挽配置并被配置为经历两个取向的pn型结,其中两个臂进一步配置成经历相同长度的波导 每个方向的pn型结。

    MONOLITHIC SILICON COHERENT TRANSCEIVER WITH INTEGRATED LASER AND GAIN ELEMENTS
    10.
    发明申请
    MONOLITHIC SILICON COHERENT TRANSCEIVER WITH INTEGRATED LASER AND GAIN ELEMENTS 审中-公开
    具有集成激光和增益元素的单晶硅相干收发器

    公开(公告)号:US20150358083A1

    公开(公告)日:2015-12-10

    申请号:US14298862

    申请日:2014-06-06

    CPC classification number: H04B10/40 G02B6/00

    Abstract: Disclosed are structures and methods for a monolithic silicon (Si) coherent transceiver with integrated laser and gain elements wherein an InP chip is bonded to the Si chip in a recess formed in that Si chip.

    Abstract translation: 公开了具有集成激光和增益元件的单片硅(Si)相干收发器的结构和方法,其中InP芯片在形成于该Si芯片中的凹槽中结合到Si芯片。

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