公开(公告)号：US20150102233A1

公开(公告)日：2015-04-16

申请号：US14490253

申请日：2014-09-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Robert KAIM ,  Charles M. FREE ,  David HOGLUND ,  Wilhelm P. PLATOW ,  Kourosh SAADATMAND

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/30472

Abstract: A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Abstract translation: 提供了一种设置用于离子注入的中等电流带状束的方法。 它包括提供一个供给工艺气体和支撑气体的离子源。 过程离子束与质量分析磁体与支撑气体束分离，并且通过改变离子源气体进料中的工作气体与支持气体的比例来控制过程离子束的强度。 过程光束强度也可以用位于离子源下游的一个或多个机械限流装置来控制。 还提供离子束系统。 该方法可以控制目标在约3uA至约3mA之间的总带状束强度。