公开(公告)号：US20160133469A1

公开(公告)日：2016-05-12

申请号：US14752522

申请日：2015-06-26

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Zhimin WAN ,  Kourosh SAADATMAND ,  Wilhelm P. PLATOW ,  Ger-Pin LIN ,  Ching-I LI ,  Rekha PADMANABHA ,  Gary N. CAI

IPC: H01L21/265

CPC classification number: H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

Abstract: A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

Abstract translation: 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US20150102233A1

公开(公告)日：2015-04-16

申请号：US14490253

申请日：2014-09-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Robert KAIM ,  Charles M. FREE ,  David HOGLUND ,  Wilhelm P. PLATOW ,  Kourosh SAADATMAND

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/30472

Abstract: A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Abstract translation: 提供了一种设置用于离子注入的中等电流带状束的方法。 它包括提供一个供给工艺气体和支撑气体的离子源。 过程离子束与质量分析磁体与支撑气体束分离，并且通过改变离子源气体进料中的工作气体与支持气体的比例来控制过程离子束的强度。 过程光束强度也可以用位于离子源下游的一个或多个机械限流装置来控制。 还提供离子束系统。 该方法可以控制目标在约3uA至约3mA之间的总带状束强度。