公开(公告)号：US20150371857A1

公开(公告)日：2015-12-24

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Rekha PADMANABHAN ,  Xiao BAI ,  Gary N. CAI ,  Ching-I LI ,  Ger-Pin LIN ,  Shao-Yu HU ,  David HOGLUND ,  Robert E. KAIM ,  Kourosh SAADATMAND

IPC: H01L21/265

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

Abstract translation: 在用于工件的较低剂量率离子注入的示例性过程中，可以使用离子源和提取操纵器来产生离子束。 提取操纵器可以位于离离子源的出口孔的间隙距离处。 当提取操纵器定位在与出射孔的最佳间隙距离处时，离开提取操纵器的离子束的电流可以最大化。 提取操纵器从出口孔定位的间隙距离可以不同于最佳间隙距离至少10％。 可以将第一电位施加到第一组电极。 当离子束通过第一组电极时，离子束的x维度可能增加。 工件可以位于离子束中以将离子注入到工件中。

公开(公告)号：US20150102233A1

公开(公告)日：2015-04-16

申请号：US14490253

申请日：2014-09-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Robert KAIM ,  Charles M. FREE ,  David HOGLUND ,  Wilhelm P. PLATOW ,  Kourosh SAADATMAND

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/30472

Abstract: A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Abstract translation: 提供了一种设置用于离子注入的中等电流带状束的方法。 它包括提供一个供给工艺气体和支撑气体的离子源。 过程离子束与质量分析磁体与支撑气体束分离，并且通过改变离子源气体进料中的工作气体与支持气体的比例来控制过程离子束的强度。 过程光束强度也可以用位于离子源下游的一个或多个机械限流装置来控制。 还提供离子束系统。 该方法可以控制目标在约3uA至约3mA之间的总带状束强度。