公开(公告)号：US20150255242A1

公开(公告)日：2015-09-10

申请号：US14201747

申请日：2014-03-07

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： William DIVERGILIO ,  Stephen SAVAS ,  Susan FELCH ,  Tienyu SHENG ,  Hao CHEN

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/061 ,  H01J2237/083

Abstract: A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

Abstract translation: 用于工件的材料改性的等离子体材料改性系统可以包括耦合到处理室的等离子体源室。 构造成支撑工件的支撑结构可以设置在处理室内。 等离子体源室可以包括第一多个磁体，第二多个磁体和围绕等离子体源室中的等离子体产生区域的第三多个磁体。 等离子体源室可以被配置为产生在等离子体产生区域内具有离子的等离子体。 第三多个磁体可以被配置为在等离子体产生区域内限制具有大于10eV的能量的等离子体的大部分电子，同时允许来自等离子体的离子通过第三多个磁体进入处理室，用于材料修饰 工件。