SWIZZLING IN 3D STACKED MEMORY
    1.
    发明申请

    公开(公告)号:US20190129651A1

    公开(公告)日:2019-05-02

    申请号:US15794457

    申请日:2017-10-26

    Abstract: A processing system includes a compute die and a stacked memory stacked with the compute die. The stacked memory includes a first memory die and a second memory die stacked on top of the first memory die. A parallel access using a single memory address is directed towards different memory banks of the first memory die and the second memory die. The single memory address of the parallel access is swizzled to access the first memory die and the second memory die at different physical locations.

    MEMORY WITH EXPANDABLE ROW WIDTH
    2.
    发明申请

    公开(公告)号:US20210043250A1

    公开(公告)日:2021-02-11

    申请号:US16996024

    申请日:2020-08-18

    Abstract: A method for operating a memory device includes initiating an access operation to a corresponding row of an array of bit cells of the memory device. Responsive to an expansion mode signal having a first state, the method further includes dynamically operating each column of a plurality of columns of the array to access each bit cell of a corresponding row within the plurality of columns during the access operation. Alternatively, responsive to the expansion mode state signal having a second state different than the first state, the method includes dynamically operating each column of a first subset of columns of the plurality of columns to access each bit cell of a corresponding row within the first subset of columns during the access operation, and maintaining each column of a second subset of columns of the plurality of columns in a static state during the access operation.

    STACKED DIE CIRCUIT ROUTING SYSTEM AND METHOD

    公开(公告)号:US20220189921A1

    公开(公告)日:2022-06-16

    申请号:US17121039

    申请日:2020-12-14

    Abstract: A stacked die system includes at least three dies. A first die has a same design as a second die. The first die includes a first circuit, and the second die includes a corresponding second circuit. A signal is received at the first die and sent to the third die via the second die. The signal is routed through either the first circuit or the second circuit but not both. Accordingly, an operation is performed on the signal prior to the signal reaching the third die but the operation is not performed by both the first circuit and the second circuit.

    MEMORY WITH EXPANDABLE ROW WIDTH
    4.
    发明申请

    公开(公告)号:US20190172525A1

    公开(公告)日:2019-06-06

    申请号:US15830176

    申请日:2017-12-04

    Abstract: A method for operating a memory device includes initiating an access operation to a corresponding row of an array of bit cells of the memory device. Responsive to an expansion mode signal having a first state, the method further includes dynamically operating each column of a plurality of columns of the array to access each bit cell of a corresponding row within the plurality of columns during the access operation. Alternatively, responsive to the expansion mode state signal having a second state different than the first state, the method includes dynamically operating each column of a first subset of columns of the plurality of columns to access each bit cell of a corresponding row within the first subset of columns during the access operation, and maintaining each column of a second subset of columns of the plurality of columns in a static state during the access operation.

    MEMORY WITH EXPANDABLE ROW WIDTH
    6.
    发明申请

    公开(公告)号:US20220148650A1

    公开(公告)日:2022-05-12

    申请号:US17530815

    申请日:2021-11-19

    Abstract: A method for operating a memory device includes initiating an access operation to a corresponding row of an array of bit cells of the memory device. Responsive to an expansion mode signal having a first state, the method further includes dynamically operating each column of a plurality of columns of the array to access each bit cell of a corresponding row within the plurality of columns during the access operation. Alternatively, responsive to the expansion mode state signal having a second state different than the first state, the method includes dynamically operating each column of a first subset of columns of the plurality of columns to access each bit cell of a corresponding row within the first subset of columns during the access operation, and maintaining each column of a second subset of columns of the plurality of columns in a static state during the access operation.

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