公开(公告)号：US20200255324A1

公开(公告)日：2020-08-13

申请号：US16860107

申请日：2020-04-28

Applicant: AGC Inc.

Inventor： Nobutaka KIDERA ,  Kazuya SASAKI ,  Yasutomi IWAHASHI

IPC: C03C3/06 ,  C03C4/16 ,  H01P1/208 ,  H01P3/12

Abstract: A silica glass for a radio-frequency device has an OH group concentration being less than or equal to 300 wtppm; an FQ value being higher than or equal to 90,000 GHz at a frequency of higher than or equal to 25 GHz and lower than or equal to 30 GHz; and a slope being greater than or equal to 1,000 in a case where the FQ value is approximated as a linear function of the frequency in a frequency band of higher than or equal to 20 GHz and lower than or equal to 100 GHz.

公开(公告)号：US20200048420A1

公开(公告)日：2020-02-13

申请号：US16660895

申请日：2019-10-23

Applicant: AGC Inc.

Inventor： Tomoya HOSODA ,  Tatsuya TERADA ,  Atsumi YAMABE ,  Nobutaka KIDERA ,  Wataru KASAI

IPC: C08J5/18 ,  C08F214/26 ,  C08J5/24 ,  C08J5/12 ,  H05K3/02 ,  H05K1/03 ,  H05K1/02

Abstract: The purpose of the present invention is to provide a fluororesin film or fluororesin laminate excellent in heat resistance and excellent in interlayer adhesion to an object to be laminated, such as a prepreg, a method for producing a hot pressed laminate using said film or laminate, and a method for producing a printed circuit board. The fluororesin film contains a fluororesin having a melting point of from 260 to 380° C., and has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 μm2 of at least one surface thereof in the thickness direction is measured by an atomic force microscope. The laminate 1 has a layer A10 containing said fluororesin and a layer B12 made of another substrate, wherein the layer A10 has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 μm2 of a second surface 10b thereof is measured by an atomic force microscope.

公开(公告)号：US20240317631A1

公开(公告)日：2024-09-26

申请号：US18734875

申请日：2024-06-05

Applicant: AGC Inc.

Inventor： Kazutaka ONO ,  Shuhei NOMURA ,  Nobutaka KIDERA ,  Nobuhiko TAKESHITA

IPC: C03C3/089 ,  C03B17/02 ,  C03B17/06 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/091 ,  C03C3/118 ,  C03C4/16 ,  C03C13/04 ,  H05K1/02 ,  H05K1/03

CPC classification number: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/024 ,  H05K1/03 ,  C03B17/02 ,  C03B17/064 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/046 ,  C03C2204/08 ,  C03C2217/253

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US20200328489A1

公开(公告)日：2020-10-15

申请号：US16911459

申请日：2020-06-25

Applicant: AGC Inc.

Inventor： Nobutaka KIDERA

IPC: H01P1/20 ,  H01P3/16

Abstract: A filter includes a waveguide formed in a dielectric surrounded by a conductor wall. The conductor wall includes at least one control wall protruding toward an inner side of the waveguide. The at least one control wall includes an end portion in a protruding direction of the at least one control wall and a central portion in the protruding direction. The end portion includes a wall portion of which wall thickness is different from the central portion.

公开(公告)号：US20240360029A1

公开(公告)日：2024-10-31

申请号：US18769560

申请日：2024-07-11

Applicant: AGC Inc.

Inventor： Kazuki KANEHARA ,  Kazuhiko NIWANO ,  Nobutaka KIDERA

IPC: C03C10/00 ,  C03C4/16 ,  H01Q1/38

CPC classification number: C03C10/0045 ,  C03C4/16 ,  C03C2214/20 ,  H01Q1/38

Abstract: The present invention relates to a crystallized glass, having a value calculated according to the following equation (A) of −50 ppm (/° C.) to 50 ppm (/° C.) when a rate of change ΔDk (/° C.) in a relative dielectric constant at 10 GHz due to a temperature is expressed by the following equation (A), and having a total content of an alkali metal oxide R2O of 3.0% or less in terms of molar percentage based on oxides,







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公开(公告)号：US20220363038A1

公开(公告)日：2022-11-17

申请号：US17874221

申请日：2022-07-26

Applicant: AGC Inc.

Inventor： Nobutaka KIDERA ,  Kazuhiko NIWANO ,  Shoichi TAKEUCHI ,  Tetsuo ABE ,  Yutaka KUROIWA

IPC: B32B17/10 ,  B32B3/18 ,  B32B7/023 ,  B32B7/025

Abstract: A laminated glass according to an embodiment of the present invention includes a first glass plate, a second glass plate, and an interlayer film held between the first glass plate and the second glass plate. When a relative dielectric constant of the first glass plate is represented by εg1; a relative dielectric constant of the second glass plate is represented by εg2; a relative dielectric constant of a first interlayer film provided in a first region of the interlayer film is represented by εm1; a reflection coefficient at an interface between the first glass plate and the first interlayer film is represented by Γ1; and a reflection coefficient at an interface between the second glass plate and the first interlayer film is represented by Γ2, the reflection coefficients Γ1 and Γ2 satisfy relations 0.0≤Γ1≤0.2 and 0.0≤Γ2≤0.2.

公开(公告)号：US20220274380A1

公开(公告)日：2022-09-01

申请号：US17746630

申请日：2022-05-17

Applicant: AGC Inc.

Inventor： Shunsuke SADAKANE ,  Shoichi TAKEUCHI ,  Hideo TSUBOI ,  Kazuhiko NIWANO ,  Nobutaka KIDERA ,  Ryota OKUDA

IPC: B32B17/10 ,  B32B7/025 ,  B32B27/30 ,  B32B27/20

Abstract: A laminated glass according to the present invention includes a first glass plate, a second glass plate, and an interlayer film. The interlayer film includes a laminated region including a first layer that is in contact with the first glass plate, a second layer that is in contact with the second glass plate, and a third layer disposed between the first layer and the second layer. When the relative dielectric constant of the first glass plate is denoted by εg1, the relative dielectric constant of the second glass plate is denoted by εg2, the relative dielectric constant of the first layer is denoted by εm1, the relative dielectric constant of the second layer is denoted by εm2, and the relative dielectric constant of the third layer is denoted by εm3, relationships εm1 εm1, εm3>εm2 are established.

公开(公告)号：US20210163341A1

公开(公告)日：2021-06-03

申请号：US17174615

申请日：2021-02-12

Applicant: AGC Inc.

Inventor： Kazutaka ONO ,  Shuhei NOMURA ,  Nobutaka KIDERA ,  Nobuhiko TAKESHITA

IPC: C03C3/089 ,  C03B25/08 ,  C03B19/14 ,  C03C3/091 ,  C03C4/16 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  H05K1/02

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 um or less in terms of arithmetic average roughness Ra. and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.