公开(公告)号：US20220134712A1

公开(公告)日：2022-05-05

申请号：US17575843

申请日：2022-01-14

Applicant: AGC Inc.

Inventor： Shuhei OGAWA ,  Norihito NAKAZAWA ,  Shuhei NOMURA

IPC: B32B17/10 ,  B32B18/00

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

公开(公告)号：US20230163453A1

公开(公告)日：2023-05-25

申请号：US18157213

申请日：2023-01-20

Applicant: AGC Inc.

Inventor： Shuhei NOMURA ,  Kazutaka ONO

IPC: H01Q1/38 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q15/00

CPC classification number: H01Q1/38 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q15/0013

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

公开(公告)号：US20210163341A1

公开(公告)日：2021-06-03

申请号：US17174615

申请日：2021-02-12

Applicant: AGC Inc.

Inventor： Kazutaka ONO ,  Shuhei NOMURA ,  Nobutaka KIDERA ,  Nobuhiko TAKESHITA

IPC: C03C3/089 ,  C03B25/08 ,  C03B19/14 ,  C03C3/091 ,  C03C4/16 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  H05K1/02

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 um or less in terms of arithmetic average roughness Ra. and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US20210013598A1

公开(公告)日：2021-01-14

申请号：US17022365

申请日：2020-09-16

Applicant: AGC Inc.

Inventor： Shuhei NOMURA ,  Kazutaka ONO

IPC: H01Q1/38 ,  H01Q15/00 ,  H01Q1/22 ,  H01Q9/04

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

公开(公告)号：US20250011220A1

公开(公告)日：2025-01-09

申请号：US18892859

申请日：2024-09-23

Applicant: AGC Inc.

Inventor： Shuhei NOMURA ,  Kazutaka ONO

IPC: C03C3/091 ,  C03C4/00 ,  C03C4/16 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q9/04 ,  H01Q15/00

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative permittivity at 20° C. and 35 GHz does not exceed 10, and the dielectric loss tangent at 20° C. and 35 GHz does not exceed 0.006.

公开(公告)号：US20210261456A1

公开(公告)日：2021-08-26

申请号：US17319270

申请日：2021-05-13

Applicant: AGC Inc.

Inventor： Kazutaka ONO ,  Yusaku MATSUO ,  Shuhei NOMURA

IPC: C03C4/16 ,  H01Q1/38 ,  H01Q1/22 ,  C03C3/085

Abstract: A glass substrate for high-frequency devices includes, in terms of molar percentage based on oxides: one or more alkaline-earth metal oxides in a total amount of 0.1 to 13%; Al2O3 and B2O3 in a total amount of 1 to 40%, in which a molar ratio of the contents represented by Al2O3/(Al2,O3+B2O3) is 0 to 0.45; at least one oxide selected from the group consisting of Sc2O3, TiO2, ZnO, Ga2O3, GeO2, Y2O3, ZrO2, Nb2O5, In2O3, TeO2, HfO2, Ta2O5, WO3, Bi2O3, La2O3, Gd2O3, Yb2O3, and Lu2O3, in a total amount of 0.1 to 1.0%; and SiO2 as a main component. The glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US20190084868A1

公开(公告)日：2019-03-21

申请号：US16195001

申请日：2018-11-19

Applicant: AGC INC.

Inventor： Shuhei NOMURA ,  Kazutaka ONO

IPC: C03C3/091 ,  C03C3/093 ,  H01L23/373 ,  H01L27/146 ,  B32B17/06 ,  B32B9/00

Abstract: An alkali-free glass substrate includes, as represented by molar percentage based on oxides, 11.0% or more of Al2O3, 8.0% or more of B2O3, and 1% or more of SrO. The alkali-free glass substrate has an average coefficient of thermal expansion α100/200 at 100 to 200° C. of from 3.10 ppm/° C. to 3.70 ppm/° C., a Young's modulus of 76.0 GPa or less, and a density of 2.42 g/cm3 or more.

公开(公告)号：US20240317631A1

公开(公告)日：2024-09-26

申请号：US18734875

申请日：2024-06-05

Applicant: AGC Inc.

Inventor： Kazutaka ONO ,  Shuhei NOMURA ,  Nobutaka KIDERA ,  Nobuhiko TAKESHITA

IPC: C03C3/089 ,  C03B17/02 ,  C03B17/06 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/091 ,  C03C3/118 ,  C03C4/16 ,  C03C13/04 ,  H05K1/02 ,  H05K1/03

CPC classification number: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/024 ,  H05K1/03 ,  C03B17/02 ,  C03B17/064 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/046 ,  C03C2204/08 ,  C03C2217/253

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US20220102850A1

公开(公告)日：2022-03-31

申请号：US17550080

申请日：2021-12-14

Applicant: AGC Inc.

Inventor： Shuhei NOMURA ,  Kazutaka ONO

IPC: H01Q1/38 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q15/00

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

公开(公告)号：US20210343610A1

公开(公告)日：2021-11-04

申请号：US17367762

申请日：2021-07-06

Applicant: AGC Inc.

Inventor： Yu HANAWA ,  Shigeki SAWAMURA ,  Shuhei NOMURA ,  Kazutaka ONO ,  Nobuhiko TAKESHITA ,  Keisuke HANASHIMA

IPC: H01L23/15 ,  C03C27/04 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C17/22 ,  H01L23/13

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 μm to 300 μm, and an inclination angle due to the warpage of 0.0004° to 0.12°.