LONG FILM, METHOD FOR PRODUCING LONG FILM, METHOD FOR PRODUCING LONG MULTILAYER BODY, AND LONG MULTILAYER BODY

    公开(公告)号:US20220118742A1

    公开(公告)日:2022-04-21

    申请号:US17562167

    申请日:2021-12-27

    Applicant: AGC Inc.

    Abstract: As an exemplary configuration, a long film is configured by thermomeltable polymers including a first unit based on tetrafluoroethylene and a second unit based on perfluoro (alkyl vinyl ether), including spherulites of the thermomeltable polymers, wherein radius of each spherulite is 10 μm or less. As another exemplary configuration, a long film is configured by tetrafluoroethylene polymers having a melt flow rate within a range of 5 to 40 g/10 min. The long film is heated at 180° C. for 30 minutes so as to measure the thermal expansion rate, and when letting thermal expansion rate in a first direction, which extends at a 45-degree angle to a melt flow direction be A, and thermal expansion rate in a second direction orthogonal to the first direction be B, A and B are respectively within the range of −2 to +1%, and |A−B| is 1% or less.

    LAMINATED FILM AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

    公开(公告)号:US20200215728A1

    公开(公告)日:2020-07-09

    申请号:US16822110

    申请日:2020-03-18

    Applicant: AGC Inc.

    Inventor: Seigo KOTERA

    Abstract: To provide a film capable of suppressing both of formation of wrinkles when a release film is suction-attached to a cavity surface in compression molding, and formation of wrinkles when the cavity bottom surface to which the release film has been suction-attached is raised; and a method for producing a semiconductor element by using said film. A laminated film 1 comprises a layer 3 of shrinkable film, of which the storage elastic modulus E′ at 180° C. is at least 70 MPa, and the thermal shrinkage in 30 minutes at 180° C., with reference to 20° C., in each of the machine direction (MD) and the transverse direction (TD), is at least 3%, and a fluororesin layer 5 present on one side or both sides of the shrinkable film layer 3.

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