Abstract:
A magneto-reactance element comprising a semiconductor, a pair of current terminals at opposite ends thereof, and at least one reactive component at angles to the current path of the semiconductor, and forming a circuit therewith, whereby a reactance is produced across the current terminals dependent upon a magnetic field and the value of the reactance varies according to the strength of the magnetic field.
Abstract:
A linear polyamide having a high glass transition temperature composed essentially of monomer units randomly distributed in the polymer chain, said monomer units having the formula
OR
WHEREIN R is a member selected from the group consisting of aliphatic, aromatic and aliphatic-aromatic radicals.
Abstract:
Disclosed is a semiconductor device comprising at least two semiconductor elements integrally connected by an insulator, each semiconductor showing negative differential conductivity under the influence of a high electric field. A high electric field domain or space charges which are generated in one of the semiconductor elements can be transferred to the other element by directly affecting the other element via an insulator.
Abstract:
The invention disclosed provides a semiconductor device and method whereby an inverted magnetic field such as a magnetic bubble is detected by placing the semiconductor device having at least two electrodes on a magnetic body, allowing a filamentary or plasma current to sweep in the semiconductor from a first input electrode, confining the filamentary current at the boundary of a detected inverted magnetic field, and detecting the position of the inverted magnetic field by means of an output electrode through which the filamentary or plasma current flows.
Abstract:
The invention disclosed is for a method and apparatus for controlling high electric field domain in a bulk semiconductor as well as an information processing method thereby. By means of a capacitive electrode, the high electric field domain may be either sustained or extinguished.