Magneto-reactance device
    1.
    发明授权
    Magneto-reactance device 失效
    MAGNETO-REACTANCE设备

    公开(公告)号:US3840728A

    公开(公告)日:1974-10-08

    申请号:US55660066

    申请日:1966-06-10

    Inventor: KATAOKA S

    CPC classification number: H01L43/00 G06G7/162

    Abstract: A magneto-reactance element comprising a semiconductor, a pair of current terminals at opposite ends thereof, and at least one reactive component at angles to the current path of the semiconductor, and forming a circuit therewith, whereby a reactance is produced across the current terminals dependent upon a magnetic field and the value of the reactance varies according to the strength of the magnetic field.

    Linear polyamides having high glass transition temperature prepared 4-(3-amino-propoxy)-phenyl-3-propylamine
    2.
    发明授权
    Linear polyamides having high glass transition temperature prepared 4-(3-amino-propoxy)-phenyl-3-propylamine 失效
    具有制备4-(3-氨基 - 丙氧基) - 苯基-3-丙酰胺的高玻璃化转变温度的线性聚酰胺

    公开(公告)号:US3725347A

    公开(公告)日:1973-04-03

    申请号:US3725347D

    申请日:1971-10-06

    CPC classification number: C08G69/40

    Abstract: A linear polyamide having a high glass transition temperature composed essentially of monomer units randomly distributed in the polymer chain, said monomer units having the formula

    OR

    WHEREIN R is a member selected from the group consisting of aliphatic, aromatic and aliphatic-aromatic radicals.

    Abstract translation: 具有高玻璃化转变温度的线性聚酰胺,其基本上由在聚合物链中随机分布的单体单元组成,所述具有式OR的单体单元为选自脂族,芳族和脂族 - 芳族基团的成员。

    Bulk semiconductor device
    3.
    发明授权
    Bulk semiconductor device 失效
    大容量半导体器件

    公开(公告)号:US3836989A

    公开(公告)日:1974-09-17

    申请号:US33273073

    申请日:1973-02-15

    CPC classification number: H03K19/08 G11C21/00 H01L47/02 H03F3/55

    Abstract: Disclosed is a semiconductor device comprising at least two semiconductor elements integrally connected by an insulator, each semiconductor showing negative differential conductivity under the influence of a high electric field. A high electric field domain or space charges which are generated in one of the semiconductor elements can be transferred to the other element by directly affecting the other element via an insulator.

    Abstract translation: 公开了一种半导体器件,其包括由绝缘体整体连接的至少两个半导体元件,每个半导体在高电场的影响下显示出负的微分电导率。 在半导体元件之一中产生的高电场域或空间电荷可以通过绝缘体直接影响另一元件而被传递到另一元件。

    Method and apparatus for detecting uneven magnetic field by sweeping a plasma current across a semiconductor
    4.
    发明授权
    Method and apparatus for detecting uneven magnetic field by sweeping a plasma current across a semiconductor 失效
    通过扫描等离子体电流来检测无电磁场的方法和装置

    公开(公告)号:US3835376A

    公开(公告)日:1974-09-10

    申请号:US28140872

    申请日:1972-08-17

    Inventor: KATAOKA S

    CPC classification number: G01R33/09 G01R33/07 G11B5/376

    Abstract: The invention disclosed provides a semiconductor device and method whereby an inverted magnetic field such as a magnetic bubble is detected by placing the semiconductor device having at least two electrodes on a magnetic body, allowing a filamentary or plasma current to sweep in the semiconductor from a first input electrode, confining the filamentary current at the boundary of a detected inverted magnetic field, and detecting the position of the inverted magnetic field by means of an output electrode through which the filamentary or plasma current flows.

    Abstract translation: 所公开的发明提供了一种半导体器件和方法,其中通过将具有至少两个电极的半导体器件放置在磁体上来检测诸如磁性气泡的反转磁场,从而允许丝状或等离子体电流从第一 输入电极,将丝状电流限制在检测到的反向磁场的边界处,并通过丝状或等离子体电流流过的输出电极检测反转磁场的位置。

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