公开(公告)号：US11883903B2

公开(公告)日：2024-01-30

申请号：US16320585

申请日：2017-07-25

申请人： AMPLITUDE SYSTEMES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE BORDEAUX ,  ALPHANOV INSTITUT D'OPTIQUE D'AQUITAINE

发明人： Konstantin Mishchik ,  John Lopez ,  Rainer Kling ,  Clémentine Javaux-Leger ,  Guillaume Duchateau ,  Ophélie Dematteo-Caulier

IPC分类号： B23K26/0622 ,  B33Y10/00 ,  B33Y30/00 ,  B23K26/359 ,  B23K26/53 ,  B23K26/00 ,  B23K26/06 ,  B23K26/067 ,  G02B5/00 ,  G02B19/00 ,  G02B27/09 ,  G02B27/14 ,  B23K26/38 ,  B23K103/00

CPC分类号： B23K26/0624 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0652 ,  B23K26/0676 ,  B23K26/359 ,  B23K26/38 ,  B23K26/53 ,  B33Y10/00 ,  B33Y30/00 ,  G02B5/001 ,  G02B19/0047 ,  G02B27/0927 ,  G02B27/14 ,  B23K2103/50

摘要： Disclosed is a method for cutting dielectric or semiconducting material with a laser. The method includes the following steps: emission of a laser beam including at least one burst of N femtoseconds laser pulses; spatial separation of the laser beam into a first split beam having a first energy, and respectively, a second split beam having a second energy; spatial concentration of energy of the first split beam in a first zone of the material, respectively, of the second split beam in a second zone of the material, the first zone and the second zone being separate and staggered by a distance dx; and adjustment of the distance between the first zone and the second zone in such a way as to initiate a straight micro-fracture oriented between the first zone and the second zone.