公开(公告)号：US20230230985A1

公开(公告)日：2023-07-20

申请号：US18010972

申请日：2021-06-22

Applicant: AMS AG

Inventor： Ewald WACHMANN

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L27/1446 ,  H01L27/14603 ,  H01L31/022416 ,  H01L31/103 ,  H01L31/18 ,  H01L27/14658

Abstract: The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.

公开(公告)号：US20160035929A1

公开(公告)日：2016-02-04

申请号：US14777484

申请日：2014-03-11

Applicant: AMS AG

Inventor： Jordi TEVA ,  Frederic ROGER ,  Ewald STUECKLER ,  Stefan JESSENIG ,  Rainer MINIXHOFER ,  Ewald WACHMANN ,  Martin SCHREMS ,  Guenther KOPPITSCH

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/182 ,  Y02E10/50

Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Abstract translation: 横向单光子雪崩二极管包括半导体本体，其包括第一导电类型的半导体材料，半导体主体中的沟槽以及阳极和阴极端子。 第一类电导率的结区域位于沟槽的侧壁附近，并且在结区域中的电导率高于距离侧壁更远的距离。 相邻的第二导电类型的半导体层被布置在与结区相邻的沟槽的侧壁处。 阳极和阴极端子分别与半导体层和结区域电连接。 接合区域可以通过侧壁注入形成。