公开(公告)号：US20160035929A1

公开(公告)日：2016-02-04

申请号：US14777484

申请日：2014-03-11

Applicant: AMS AG

Inventor： Jordi TEVA ,  Frederic ROGER ,  Ewald STUECKLER ,  Stefan JESSENIG ,  Rainer MINIXHOFER ,  Ewald WACHMANN ,  Martin SCHREMS ,  Guenther KOPPITSCH

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/182 ,  Y02E10/50

Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Abstract translation: 横向单光子雪崩二极管包括半导体本体，其包括第一导电类型的半导体材料，半导体主体中的沟槽以及阳极和阴极端子。 第一类电导率的结区域位于沟槽的侧壁附近，并且在结区域中的电导率高于距离侧壁更远的距离。 相邻的第二导电类型的半导体层被布置在与结区相邻的沟槽的侧壁处。 阳极和阴极端子分别与半导体层和结区域电连接。 接合区域可以通过侧壁注入形成。

公开(公告)号：US20150333210A1

公开(公告)日：2015-11-19

申请号：US14654470

申请日：2013-12-19

Applicant: AMS AG

Inventor： Jordi TEVA ,  Frederic ROGER

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0248 ,  H01L31/0224

CPC classification number: H01L31/022408 ,  H01L31/02005 ,  H01L31/0224 ,  H01L31/022416 ,  H01L31/0248 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/107 ,  H01L31/182 ,  Y02E10/50

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

Abstract translation: 形成第一导电类型的半导体本体，其包括基底层，基底层上的第一另外的层和第一另外的层上的第二另外的层。 基底层和第二另外的层具有低于第一另外的层的掺杂浓度的本征掺杂或掺杂浓度。 在半导体本体中布置相对的第二导电类型的掺杂区域，穿透第一另外的层并且延伸到基底层并进入第二另外的层。 阳极和阴极端子分别电连接到第一另外的层和掺杂区域。 可以通过用掺杂多晶硅填充沟槽来产生掺杂区域。