公开(公告)号：US20180211951A1

公开(公告)日：2018-07-26

申请号：US15413825

申请日：2017-01-24

Applicant: ANALOG DEVICES, INC.

Inventor： Sirui Luo ,  Javier Alejandro Salcedo

IPC: H01L27/02 ,  H01L29/78 ,  H01L27/06 ,  H01L29/10 ,  H01L23/522

CPC classification number: H01L27/0266 ,  H01L29/1095 ,  H01L29/7835

Abstract: High voltage drain-extended metal-oxide-semiconductor (DEMOS) bipolar switches for electrical overstress protection are provided. In certain configurations herein, an electrical overstress switch embodiment for providing electrical overstress protection, such as electrostatic discharge/electrical overstress (ESD/EOS) protection includes both a DEMOS device and an embedded bipolar device. The switch is implemented to achieve the advantages provided by the combined conduction of DEMOS and bipolar devices. For example, the DEMOS device provides surface conduction at the gate region for relatively fast switch device turn on and low voltage overshoot, while the bipolar device provides high current conduction during stress condition and a high holding voltage characteristics to prevent latch-up in mission critical integrated circuit applications.

公开(公告)号：US11942473B2

公开(公告)日：2024-03-26

申请号：US17806903

申请日：2022-06-14

Applicant: Analog Devices, Inc.

Inventor： Sirui Luo ,  Srivatsan Parthasarathy ,  Piotr Olejarz ,  Daniel Boyko ,  Ara Arakelian ,  Stuart Patterson

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H02H9/046

Abstract: Electrostatic discharge protection for high speed transceiver interface is disclosed. In one aspect, an electrical overstress (EOS) protection device includes an anode terminal and a cathode terminal, a silicon controlled rectifier, a second NPN bipolar transistor including a base connected to the anode terminal and an emitter connected to an emitter of the first PNP bipolar transistor, and a second PNP bipolar transistor including an emitter connected to an emitter of the second NPN bipolar transistor and a base connected to a base of the first PNP bipolar transistor. Two or more paths for current conduction are present during a positive overstress transient that increases a voltage of the anode terminal relative to the cathode terminal, including a first path through the silicon controlled rectifier and a second path through the second NPN bipolar transistor and the second PNP bipolar transistor.

公开(公告)号：US10319714B2

公开(公告)日：2019-06-11

申请号：US15413825

申请日：2017-01-24

Applicant: ANALOG DEVICES, INC.

Inventor： Sirui Luo ,  Javier Alejandro Salcedo

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/78

Abstract: High voltage drain-extended metal-oxide-semiconductor (DEMOS) bipolar switches for electrical overstress protection are provided. In certain configurations herein, an electrical overstress switch embodiment for providing electrical overstress protection, such as electrostatic discharge/electrical overstress (ESD/EOS) protection includes both a DEMOS device and an embedded bipolar device. The switch is implemented to achieve the advantages provided by the combined conduction of DEMOS and bipolar devices. For example, the DEMOS device provides surface conduction at the gate region for relatively fast switch device turn on and low voltage overshoot, while the bipolar device provides high current conduction during stress condition and a high holding voltage characteristics to prevent latch-up in mission critical integrated circuit applications.

公开(公告)号：US20230402448A1

公开(公告)日：2023-12-14

申请号：US17806903

申请日：2022-06-14

Applicant: Analog Devices, Inc.

Inventor： Sirui Luo ,  Srivatsan Parthasarathy ,  Piotr Olejarz ,  Daniel Boyko ,  Ara Arakelian ,  Stuart Patterson

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H02H9/046

Abstract: Electrostatic discharge protection for high speed transceiver interface is disclosed. In one aspect, an electrical overstress (EOS) protection device includes an anode terminal and a cathode terminal, a silicon controlled rectifier, a second NPN bipolar transistor including a base connected to the anode terminal and an emitter connected to an emitter of the first PNP bipolar transistor, and a second PNP bipolar transistor including an emitter connected to an emitter of the second NPN bipolar transistor and a base connected to a base of the first PNP bipolar transistor. Two or more paths for current conduction are present during a positive overstress transient that increases a voltage of the anode terminal relative to the cathode terminal, including a first path through the silicon controlled rectifier and a second path through the second NPN bipolar transistor and the second PNP bipolar transistor.