Electrostatic discharge protection for high speed transceiver interface

    公开(公告)号:US11942473B2

    公开(公告)日:2024-03-26

    申请号:US17806903

    申请日:2022-06-14

    CPC classification number: H01L27/0262 H02H9/046

    Abstract: Electrostatic discharge protection for high speed transceiver interface is disclosed. In one aspect, an electrical overstress (EOS) protection device includes an anode terminal and a cathode terminal, a silicon controlled rectifier, a second NPN bipolar transistor including a base connected to the anode terminal and an emitter connected to an emitter of the first PNP bipolar transistor, and a second PNP bipolar transistor including an emitter connected to an emitter of the second NPN bipolar transistor and a base connected to a base of the first PNP bipolar transistor. Two or more paths for current conduction are present during a positive overstress transient that increases a voltage of the anode terminal relative to the cathode terminal, including a first path through the silicon controlled rectifier and a second path through the second NPN bipolar transistor and the second PNP bipolar transistor.

    ELECTROSTATIC DISCHARGE PROTECTION FOR HIGH SPEED TRANSCEIVER INTERFACE

    公开(公告)号:US20230402448A1

    公开(公告)日:2023-12-14

    申请号:US17806903

    申请日:2022-06-14

    CPC classification number: H01L27/0262 H02H9/046

    Abstract: Electrostatic discharge protection for high speed transceiver interface is disclosed. In one aspect, an electrical overstress (EOS) protection device includes an anode terminal and a cathode terminal, a silicon controlled rectifier, a second NPN bipolar transistor including a base connected to the anode terminal and an emitter connected to an emitter of the first PNP bipolar transistor, and a second PNP bipolar transistor including an emitter connected to an emitter of the second NPN bipolar transistor and a base connected to a base of the first PNP bipolar transistor. Two or more paths for current conduction are present during a positive overstress transient that increases a voltage of the anode terminal relative to the cathode terminal, including a first path through the silicon controlled rectifier and a second path through the second NPN bipolar transistor and the second PNP bipolar transistor.

    Power switching in a two-wire conductor system

    公开(公告)号:US09772665B2

    公开(公告)日:2017-09-26

    申请号:US14102603

    申请日:2013-12-11

    Inventor: Stuart Patterson

    CPC classification number: G06F1/263 G06F1/266 G06F1/28 G06F13/4256

    Abstract: In an example embodiment, a power switching circuit of an automobile audio bus (A2B) chip is provided in a bi-directional, multi-node two-wire conductor system that includes a plurality of A2B chips interconnected on a twisted wire pair bus (A2B bus), with at least one A2B chip functioning as a master and the remaining A2B chips functioning as slaves. The power switching circuit of the A2B chip powers up a next downstream A2B chip in the A2B bus sequentially according to a power switching procedure, and the power switching circuit is configured to detect faults in the A2B bus before, during, and after the power switching procedure. Each A2B chip enables power to the next downstream A2B chip without risk of damage to any components in the system due to line faults on the downstream A2B bus, or collapse of the power supply at the local A2B chip.

    POWER SWITCHING IN A TWO-WIRE CONDUCTOR SYSTEM
    4.
    发明申请
    POWER SWITCHING IN A TWO-WIRE CONDUCTOR SYSTEM 有权
    两线导体系统中的电源开关

    公开(公告)号:US20140101477A1

    公开(公告)日:2014-04-10

    申请号:US14102603

    申请日:2013-12-11

    Inventor: Stuart Patterson

    CPC classification number: G06F1/263 G06F1/266 G06F1/28 G06F13/4256

    Abstract: In an example embodiment, a power switching circuit of an automobile audio bus (A2B) chip is provided in a bi-directional, multi-node two-wire conductor system that includes a plurality of A2B chips interconnected on a twisted wire pair bus (A2B bus), with at least one A2B chip functioning as a master and the remaining A2B chips functioning as slaves. The power switching circuit of the A2B chip powers up a next downstream A2B chip in the A2B bus sequentially according to a power switching procedure, and the power switching circuit is configured to detect faults in the A2B bus before, during, and after the power switching procedure. Each A2B chip enables power to the next downstream A2B chip without risk of damage to any components in the system due to line faults on the downstream A2B bus, or collapse of the power supply at the local A2B chip.

    Abstract translation: 在一个示例实施例中,汽车音响总线(A2B)芯片的功率开关电路设置在双向多节点双线导体系统中,该双向多节点双线导体系统包括在双绞线对总线(A2B)上互连的多个A2B芯片 总线),其中至少一个A2B芯片用作主机,其余的A2B芯片用作从机。 A2B芯片的电源切换电路根据电源切换顺序顺序为A2B总线中的下一个A2B芯片供电,并且功率开关电路配置为在功率切换之前,之中和之后检测A2B总线中的故障 程序。 每个A2B芯片可以为下一个A2B芯片供电,而不会因为下游A2B总线上的线路故障或者局部A2B芯片上的电源崩溃而损坏系统中的任何组件。

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